AP4810GSM
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Recovery Time
▼
Fast Switching Performance
D
D
D
D
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
BV
DSS
R
DS(ON)
G
30V
13.5mΩ
11A
I
D
D
SO-8
S
S
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
S
Schottky Diode
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
V
KA
I
F
@T
A
=25℃
I
FM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Schottky Reverse Voltage
Continous Forward Current
Pulsed Diode Forward Current
Max Power Dissipation (MOSFET)
Max Power Dissipation (Schottky)
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
11
9.3
50
30
1
25
2.5
2.0
-55 to 150
-55 to 150
Units
V
V
A
A
A
V
A
A
W
W
℃
℃
Thermal Data
Symbol
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient (MOSFET)
3
Value
50
60
Unit
℃/W
℃/W
Maximum Thermal Resistance, Junction-ambient
3
(Schottky)
Data and specifications subject to change without notice
1
200910296
AP4810GSM
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=11A
V
DS
=30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=10A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
18
-
-
-
14
3.2
8.4
9
6
27
8
200
170
Max. Units
-
13.5
20
3
-
100
1
+100
22.5
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
mA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
1010 1200
Source-Drain Diode
Symbol
V
SD
I
S
Parameter
Max Body-Diode+Schottky Continous Current
Body Diode+Schottky Reverse Recovery Time
I
S
=10A,
Body Diode+Schottky Reverse Recovery Charge
Test Conditions
Min.
-
-
-
Typ.
0.48
21
13
Max. Units
0.5
5
-
-
V
A
ns
nC
Diode+Schottky Forward On Voltage
2
I
S
=1.0A, V
GS
=0V
t
rr
Q
rr
V
GS
=0
V
,
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4810GSM
50
50
T
A
=25 C
40
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7 .0V
5.0V
4.5V
o
T
A
= 150 C
40
10V
7.0V
5.0V
4.5V
30
30
20
20
V
G
=3.0V
10
V
G
=3.0V
10
0
0
1
2
3
4
5
6
0
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
I
D
=5A
T
A
=25
℃
18
1.4
I
D
= 10 A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
16
1.2
14
1.0
12
0.8
10
8
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.50
10
1
T
j
=125 C
o
T
j
=25 C
1.25
o
0.1
Normalized V
GS(th)
(V)
MOSFET+Schottky
0
0.2
0.4
0.6
0.8
I
S
(A)
1.00
0.01
0.75
0.001
0.50
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4810GSM
f=1.0MHz
14
10000
I
D
= 10 A
12
V
GS
, Gate to Source Voltage (V)
10
C (pF)
8
V
DS
= 15 V
V
DS
= 20 V
V
DS
= 25 V
1000
C
iss
6
4
2
C
oss
C
rss
100
0
10
20
30
40
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
100us
1ms
10ms
0.2
0.1
0.1
I
D
(A)
0.05
1
100ms
1s
0.1
0.02
0.01
P
DM
0.01
t
T
Single Pulse
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
DC
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 125℃/W
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V
DS
=5V
40
V
G
Q
G
T
j
=25 C
o
I
D
, Drain Current (A)
T
j
=150 C
o
4.5V
Q
GS
Q
GD
30
20
10
Charge
0
0
1
2
3
4
5
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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