MX856 / MX857
Single Driver for GaAs FET
Switches and Attenuators
Features:
•
•
•
•
•
•
•
•
CMOS Technology
TTL/CMOS compatible inputs
Low switching noise
5nS typical true / complement output skew
5nS typical output rise and fall times
Up to 20V output voltage
Output high voltage programmable via V
OPT
Output low voltage programmable via V
EE
General Description
The MX856 and MX857 are high speed single
channel level shifters with complimentary output
drivers. The MX856 features a 5.0V V
CC
positive
supply, and the MX857 features a 3.3V V
CC
positive supply.
The input buffers accept digital TTL or CMOS level
signals, amplifies them to the V
CC
and GND supply
rails, and generates complementary outputs. The
translator level shifts these output signals by
amplifying them to the V
CC
and V
EE
supply rails.
The output drivers then buffer the signals to V
OPT
and V
EE
. V
OPT
may be set within the range of V
CC
and GND. The output drivers also adjust the
complimentary signals for minimized skew error.
The MX856 and MX857 are designed to operate
over a temperature range of -40°C to +85°C, and
are available as die in wafer form, die in waffle
pack, 8 lead SOIC package, and SOIC on Tape
and Reel.
Applications
•
Digital control of analog circuits
•
Level shifting and amplification
•
Circuit applications requiring complementary
signal generation with low skew
•
Bias control for PIN diode drivers in a
microwave switch
Ordering Information – MX856
Part No.
Description
Ordering Information – MX857
Part No.
Description
19202
19201
19200-00
19241-00
MX856
MX856
MX856
MX856
Die / Wafer Form
Die / Waffle Pack
8 Lead SOIC
SOIC on Tape & Reel
19302
19301
19300-00
19341-00
MX857
MX857
MX857
MX857
Die / Wafer Form
Die / Waffle Pack
8 Lead SOIC
SOIC on Tape & Reel
Functional Block Diagram
input buffer
VCC VCC
translator
VCC
output buffer
VOPT
8 Lead SOIC Configuration
OUT
IN
OUT
GND
VCC
IN
1
8
OUT_B
GND
VOPT
VEE
OUT_B
GND
GND
VEE
VEE
2
7
3
6
4
5
MX856 / MX857
Drawing No. 19209
1
4/11/06
www.claremicronix.com
MX856 / MX857
Absolute Maximum Ratings
SYMBOL
V
CC
V
EE
V
OPT
V
OPT
-V
EE
V
CC
- V
EE
V
CC
-V
OPT
V
IN
I
IN
T
A
T
STG
ESD
PARAMETER
Positive DC Supply Voltage
Negative DC Supply Voltage
Output Positive DC Supply Voltage
Output Positive to Negative Supply Voltage
Positive to Negative Supply Voltage
Positive to Output Supply Voltage
DC Input Voltage
DC Input Current
Ambient Operating Temperature
Storage Temperature
ESD sensitivity (human body model)
MIN
-0.4
-17.0
-0.4
-0.4
-0.4
-0.4
-10
-40
-65
1.0
MAX
+6.0
+0.4
+6.0
+20.0
+14.0
Vcc+0.4
V
CC
+0.4
+10
+85
+150
UNITS
V
V
V
V
V
V
V
µA
o
C
o
C
kV
Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause
permanent damage to the device. Functional operation of the device at these or any other conditions
beyond those indicated in the operational sections of this data sheet is not implied. Exposure of the
device to the absolute maximum ratings for an extended period may degrade the device and affect
its reliability.
Guaranteed Operating Range
MX856 5.0V version
SYMBOL
PARAMETER
V
CC
Positive DC Supply Voltage
V
EE
Negative DC Supply Voltage
V
OPT
Output Positive DC Supply Voltage
V
OPT
-V
EE
Output Positive to Negative Supply Voltage
V
CC
- V
EE
Positive to Negative Supply Voltage
V
CC
-V
OPT
Positive to Output Supply Voltage
T
A
Ambient Operating Temperature
T
R
, T
F
Input Rise and Fall Time
MX857B 3.3V version
SYMBOL
PARAMETER
V
CC
Positive DC Supply Voltage
V
EE
Negative DC Supply Voltage
V
OPT
Output Positive DC Supply Voltage
V
OPT
-V
EE
Output Positive to Negative Supply Voltage
V
CC
- V
EE
Positive to Negative Supply Voltage
V
CC
-V
OPT
Positive to Output Supply Voltage
T
A
Ambient Operating Temperature
T
R
, T
F
Input Rise and Fall Time
MIN
3.0
-15.0
0.0
7.5
7.5
0.0
-40
0.0
MAX
5.5
-4.5
5.5
20.0
20.0
V
CC
+85
500
UNITS
V
V
V
V
V
V
o
C
nS
MIN
3.0
-17.0
0.0
7.5
7.5
0.0
-40
0.0
MAX
3.6
-4.5
3.6
20.0
20.0
V
CC
+85
500
UNITS
V
V
V
V
V
V
o
C
nS
MX856 / MX857
Drawing No. 19209
2
4/11/06
www.claremicronix.com
MX856 / MX857
DC Characteristics -
Over Guaranteed Operating Range
SYMBOL
V
IH
V
IL
V
OH
V
OL
I
IN
I
CC
I
EE
I
OPT
PARAMETER
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage(I
OH
=-1mA)
Output LOW Voltage (I
OL
=1mA)
Input Current (V
IN
=0.0 to V
CC
)
Supply Current (V
IN
=0.0 or V
CC
)
Supply Current (V
IN
=0.0 or V
CC
)
Supply Current (V
IN
=0.0 or V
CC
)
V
CC
= 3.3V
V
CC
= 5.0V
V
CC
= 3.3V
V
CC
= 5.0V
V
CC
= 3.3V
V
CC
= 5.0V
MIN
2.0
V
OPT
- 0.1
-10
<1.0
<1.0
<1.0
<1.0
<1.0
<1.0
V
EE
+ 0.1
+10
TYP
MAX
0.8
Units
V
V
V
V
uA
uA
uA
uA
uA
uA
uA
ESD Warning
ESD (electrostatic discharge) sensitive device. Electrostatic charges can readily accumulate on test equipment and the human body
in excess of 4000 Volts. This energy can discharge without detection. Although the MX856 / MX857 feature proprietary ESD
protection circuitry, permanent damage may be sustained if subjected to high energy electrostatic discharges. Proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
MX856 / MX857
Drawing No. 19209
3
4/11/06
www.claremicronix.com
MX856 / MX857
AC Characteristics
V
CC
=V
OPT
=3.3V, V
EE
=-16.7V or -4.5V, Input rise and fall time 6ns, V
IH
=3.1, V
IL
=0.2V, T
A
= -40
O
C to +85
O
C
V
CC
=V
OPT
=5.0V, V
EE
=-15.0V or -4.5V, Input rise and fall time 6ns, V
IH
=4.8, V
IL
=0.2V, T
A
= -40
O
C to +85
O
C
SYMBOL
T
PLH
T
PHL
T
TLH
T
THL
T
SKEW
C
IN
PARAMETER
Propagation Delay (low to high input)
Propagation Delay (high to low input)
Output Rise Time (C
LD
=10pf)
Output Fall Time (C
LD
=10pf)
Delay Skew (Output A to Output B)
Input Capacitance
V
CC
= 3.3V
V
CC
= 5.0V
V
CC
= 3.3V
V
CC
= 5.0V
V
CC
= 3.3V
V
CC
= 5.0V
V
CC
= 3.3V
V
CC
= 5.0V
V
CC
= 3.3V
V
CC
= 5.0V
Typ
22
24
20
20
5
4
5
4
5
5
Max
29
29
29
29
9
9
8
8
10
10
15
UNITS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
pF
Note: Production Tested at 25
O
C
O
C
6ns
6ns
VCC-0.2V
IN
0.2V
90%
50%
10%
90%
50%
10%
Tlh
90%
50%
10%
Tplh
Tphl
90%
50%
10%
Thl
Tskew
Tplh
Tphl
90%
50%
10%
Tlh
90%
50%
10%
Thl
Vopt
Vee
Tskew
OUT
Vopt
Vee
OUTB
MX856 / MX857
Drawing No. 19209
4
4/11/06
www.claremicronix.com
MX856 / MX857
Pad Locations
(in µm)
PAD NAME
OUT
OUT_B
GND
V
OPT
V
EE
IN
V
CC
GND
X
89.1
489.1
579.1
579.3
406
165.4
0
49.9
Y
556.4
556.4
306.3
126.8
0
0
74.3
306.3
Pad location is the pad center point in microns. The origin of the coordinates is located as shown.
Die Size: 1095 µm X 930 µm
(Not Drawn To Scale)
MX856 / MX857
Drawing No. 19209
5
4/11/06
www.claremicronix.com
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