MCP1632
High-Speed, Low-Side PWM Controller
Features:
• High-Speed PWM Controller with Integrated
Low-Side MOSFET Driver
• Multiple Switching Frequency Options (f
SW
):
- 300 kHz
- 600 kHz
• Adjustable Reference Voltage Generator
• Adjustable Soft Start
• Internal Slope Compensation
• Shutdown Input Pin (EN)
• Low Operating Current: < 5 mA (typical)
• Undervoltage Lockout (UVLO) Protection
• Output Short Circuit Protection
• Overtemperature Protection
• Operating Temperature Range:
- -40°C to +125°C
Description:
The MCP1632 high-speed PWM controller is a
pulse-width modulator developed for stand-alone power
supply applications. The MCP1632 includes a
high-speed analog control loop, a logic-level MOSFET
driver, an internal oscillator, a reference voltage
generator, and internal slope compensation. This high
level of integration makes it an ideal solution for
standalone SMPS applications. MCP1632 is suitable for
use in topologies requiring a low-side MOSFET control,
such as Boost, Flyback, SEPIC,
Ćuk,
etc. Typical
applications include battery chargers, intelligent power
systems, brick DC-DC converters, LED drivers. Due to
its low power consumption, the MCP1632 PWM
controller is recommended for battery-operated
applications.
The MCP1632 offers a Peak Current mode control in
order to achieve consistent performance regardless of
the topology of the power train or the operating
conditions. In addition, the MCP1632 can implement
the Voltage Mode Control for cost-sensitive solutions.
The MCP1632 PWM controller can be easily interfaced
with PIC microcontrollers in order to develop an
intelligent power solution.
Additional features include: UVLO, overtemperature
and overcurrent protection, shutdown capability (EN
pin) and an adjustable soft start option.
Applications:
•
•
•
•
Switch Mode Power Supplies
Brick DC-DC Converters
Battery Charger Applications
LED Drivers
Related Literature:
• “MCP1632 300 kHz Boost Converter Demo Board
User’s Guide”, Microchip Technology Inc.,
DS20005252A, 2013
Package Type
8-Lead DFN
(2 mm x 3 mm)
COMP 1
FB 2
CS 3
EN 4
EP
9
8 V
REF
7 Vin
6 V
EXT
5 GND
8-Lead MSOP
COMP
1
FB
2
CS
3
EN
4
8
V
REF
7
V
IN
6
V
EXT
5
GND
2013 Microchip Technology Inc.
DS20005254A-page 1
MCP1632
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings †
V
DD
...................................................................................6.0V
Maximum Voltage on Any Pin . (V
GND
– 0.3)V to (V
IN
+ 0.3)V
V
EXT
Short Circuit Current ...........................Internally Limited
Storage Temperature.....................................-65°C to +150°C
Maximum Junction Temperature, T
J
........................... +150°C
Continuous Operating Temperature Range ..-40°C to +125°C
ESD protection on all pins, HBM
2
kV
AC/DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, V
IN
= 3.0V to 5.5V, F
OSC
= 300 kHz, C
IN
= 0.1 µF,
V
IN
for typical values = 5.0V, T
A
= -40°C to +125°C.
Parameters
Input Voltage
Input Operating Voltage
Input Quiescent Current
Input Shutdown Current
EN Input
EN Input Voltage Low
EN Input Voltage High
Delay Time
Internal Oscillator
Internal Oscillator Range
F
OSC
250
510
Reference Voltage Section
Reference Voltage
Input Range
Internal Constant Current
Generator
Error Amplifier
Input Offset Voltage
Error Amplifier
Common-Mode Input Range
Common-Mode
Rejection Ratio
Open-Loop Voltage Gain
V
OS
PSRR
V
CM
CMRR
A
VOL
-4
65
GND - 0.3
60
80
0.1
80
—
80
95
+4
—
V
IN
—
—
mV
dB
V
dB
dB
V
IN
= 3.0V to 5.0V, V
CM
= 1.2V
(Note
1)
Note 1
V
IN
= 5V, V
CM
= 0V to 2.5V
(Note
1)
R
L
= 5 k to V
IN
/2,
100 mV < V
EAOUT
< V
IN
- 100 mV,
V
CM
= 1.2V (Note
1)
R
L
= 5 k to V
IN
/2
V
IN
= 5V (Note
1)
V
IN
= 5V, V
REF
= 1.2V,
V
FB
= 1.4V, V
COMP
= 2.0V
V
REF
0
—
V
IN
V
Note 1
Refer to
Section 4.7 “Reference
Voltage Generator”
for details.
Refer to
Section 4.7 “Reference
Voltage Generator”
for details.
300
600
350
690
kHz
Two options
Refer to
Section 4.8 “Internal
Oscillator”.
EN
LOW
EN
HIGH
—
—
75
—
—
—
190
40
0.8
—
210
60
V
% of V
IN
µs
µs
EN goes from low to high (Note
1)
EN goes from high to low (Note
1)
V
IN
I(V
IN
)
I(V
IN
)
SHDN
3.0
—
—
—
5
—
5.5
7.5
2
V
mA
µA
I
EXT
= 0 mA
EN = 0V
Sym.
Min.
Typ.
Max.
Units
Conditions
I
REF
48
50
52
µA
Low-Level Output
Gain Bandwidth Product
Error Amplifier Sink Current
Note 1:
V
OL
GBWP
I
SINK
—
3.5
4
25
5
8
50
—
—
mV
MHz
mA
Ensured by design. Not production tested.
DS20005254A-page 4
2013 Microchip Technology Inc.
MCP1632
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, V
IN
= 3.0V to 5.5V, F
OSC
= 300 kHz, C
IN
= 0.1 µF,
V
IN
for typical values = 5.0V, T
A
= -40°C to +125°C.
Parameters
Error Amplifier
Source Current
Current Sense Input
Maximum Current Sense
Signal
Blanking Time
Delay from CS to V
EXT
Current Sense Input Bias
Current
PWM Section
Minimum Duty Cycle
Maximum Duty Cycle
Ramp Amplitude
DC Offset Low
DC Offset High
Ramp Generator Output
Impedance
Internal Driver
R
DSon
P-channel
R
DSon
N-channel
V
EXT
Rise Time
V
EXT
Fall Time
Protection Features
Undervoltage Lockout
Undervoltage Lockout
Hysteresis
Thermal Shutdown
Thermal Shutdown
Hysteresis
Note 1:
UVLO
UVLO
HYS
T
SHD
T
SHD_HYS
2.6
50
—
—
—
110
150
20
2.9
180
—
—
V
mV
°C
°C
Note 1
Note 1
V
IN
falling,
V
EXT
low state when in UVLO
R
DSon_P
R
DSon_N
T
RISE
T
FALL
—
—
—
—
10
7
—
—
30
30
18
18
ns
ns
C
L
= 100 pF
Typical for V
IN
= 3V (Note
1)
C
L
= 100 pF
Typical for V
IN
= 3V (Note
1)
DC
MIN
DC
MAX
V
RAMP
—
—
Z
RG
—
80
0.8
0.15
1.12
5.5
—
85
0.9
0.32
1.22
6
0
95
1
0.45
1.32
6.5
%
%
V
PP
V
V
k
Refer to
Section 4.6 “Slope
Compensation”
for details.
Refer to
Section 4.6 “Slope
Compensation”
for details.
Refer to
Section 4.6 “Slope
Compensation”
for details.
Refer to
Section 4.6 “Slope
Compensation”
for details.
V
FB
= V
REF
+ 0.1V, V
CS
= GND
(Note
1)
V
CS_MAX
0.8
0.9
0.97
V
Set by maximum error amplifier
clamp voltage, divided by 3
(Note
1)
Note 1
Excluding the blanking time
(Note
1)
Note 1
Sym.
I
SOURCE
Min.
4
Typ.
6
Max.
—
Units
mA
Conditions
V
IN
= 5V, V
REF
= 1.2V,
V
FB
= 1.0V, V
COMP
= 2.0V,
Absolute Value
T
BLANK
T
CS_VEXT
I
CS_B
80
—
—
100
—
-0.1
130
35
—
ns
ns
µA
Slope Compensation Ramp Generator
Ensured by design. Not production tested.
2013 Microchip Technology Inc.
DS20005254A-page 5
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