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HIP6601BECBZA-T

产品描述gate drivers W/anneal synchronusc buck msft drvr
产品类别半导体    其他集成电路(IC)   
文件大小186KB,共12页
制造商Intersil ( Renesas )
官网地址http://www.intersil.com/cda/home/
标准  
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HIP6601BECBZA-T概述

gate drivers W/anneal synchronusc buck msft drvr

HIP6601BECBZA-T规格参数

参数名称属性值
ManufactureIntersil
产品种类
Product Category
Gate Drivers
RoHSYes
ConfiguratiInverting, Non-Inverting
激励器数量
Number of Drivers
2
Rise Time50 ns
Fall Time20 ns
Output Curre730 mA
电源电压-最大
Supply Voltage - Max
13.2 V
最大工作温度
Maximum Operating Temperature
+ 85 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOIC N EP
最小工作温度
Minimum Operating Temperature
0 C
Number of Outputs2
系列
Packaging
Reel
工厂包装数量
Factory Pack Quantity
2500

文档预览

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S IG N S
NEW DE
E D F OR
MMEND COMMENDS:
CO
NOT RE TERSIL RE
L6 13A,
Data
6
Sheet
IN
6613, IS
L
612A, IS
12, ISL6 14, ISL6614A
ISL66
ISL66
®
HIP6601B, HIP6603B, HIP6604B
May 1, 2012
FN9072.8
Synchronous Rectified Buck
MOSFET Drivers
The HIP6601B, HIP6603B and HIP6604B are high-frequency,
dual MOSFET drivers specifically designed to drive two power
N-Channel MOSFETs in a synchronous rectified buck converter
topology. These drivers combined with a HIP63xx or the ISL65xx
series of Multi-Phase Buck PWM controllers and MOSFETs form
a complete core-voltage regulator solution for advanced
microprocessors.
The HIP6601B drives the lower gate in a synchronous rectifier to
12V, while the upper gate can be independently driven over a range
from 5V to 12V. The HIP6603B drives both upper and lower gates
over a range of 5V to 12V. This drive-voltage flexibility provides
the advantage of optimizing applications involving trade-offs
between switching losses and conduction losses. The HIP6604B
can be configured as either a HIP6601B or a HIP6603B.
The output drivers in the HIP6601B, HIP6603B and HIP6604B
have the capacity to efficiently switch power MOSFETs at
frequencies up to 2MHz. Each driver is capable of driving a
3000pF load with a 30ns propagation delay and 50ns transition
time. These products implement bootstrapping on the upper gate
with only an external capacitor required. This reduces
implementation complexity and allows the use of higher
performance, cost effective, N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both MOSFETs
from conducting simultaneously.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Ld SOIC and EPSOIC and 16 Ld QFN Packages
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Output Stage Shutdown
• Supply Undervoltage Protection
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat No
Leads—Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
• Pb-Free (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD® Athlon™
Microprocessors
• High Frequency Low Profile DC/DC Converters
• High Current Low Voltage DC/DC Converters
Related Literature
• Technical Brief
TB363,
Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices (SMDs)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002-2005, 2012. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.

 
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