电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CCDNPO020D1K06033A

产品描述Ceramic Capacitor, Ceramic, 1000V, 2.5% +Tol, 2.5% -Tol, NP0, -/+60ppm/Cel TC, 0.00002uF,
产品类别无源元件    电容器   
文件大小279KB,共7页
制造商Arco Electronics
下载文档 详细参数 全文预览

CCDNPO020D1K06033A概述

Ceramic Capacitor, Ceramic, 1000V, 2.5% +Tol, 2.5% -Tol, NP0, -/+60ppm/Cel TC, 0.00002uF,

CCDNPO020D1K06033A规格参数

参数名称属性值
是否Rohs认证不符合
Objectid767460920
包装说明,
Reach Compliance Codeunknown
ECCN代码EAR99
电容0.00002 µF
电容器类型CERAMIC CAPACITOR
介电材料CERAMIC
高度6.5 mm
长度6 mm
负容差2.5%
端子数量2
最高工作温度85 °C
最低工作温度-25 °C
封装形式Radial
包装方法Ammo Pack
正容差2.5%
额定(直流)电压(URdc)1000 V
系列CCD
温度特性代码NP0
温度系数60ppm/Cel ppm/°C
端子节距9.5 mm

CCDNPO020D1K06033A文档预览

ARCO ELECTRONICS, LLC.
Ordering code
CCD
NPO
1
2
1.Type
TYPE
CCD:
C
eramic capacitor
CCE:
Epoxy coating
CERAMIC DISC CAPACITOR
2K
5
10
6
6.Size Code
0
7
Code
05
10
12
103
3
M
4
7
8
1
9
DIA(mm)
5
10
12
B
10
2.Temperature Characteristic
Code
TEMP. COEFF.
(PPM/°C)
Code
CAP. Change (%)
Code
005
010
221
Code
B
C
D
F
G
Code
1C
1E
1H
2A
2B
PF
5P
10P
220P
CAP. TOL.
±0.1PF
±0.25PF
±0.5PF
±1%
±2%
CAP. TOL.
16V
25V
50V
100V
250V
NPO (CH)
0±60
B
±10
SL
+350~-1000
7.Pitch
E
+22,-56
Code
222
103
104
Code
J
K
M
Z
P
Code
2H
1K
2K
3K
6K
F
+22,-82
PF
2200P
10000P
100000P
CAP. TOL.
±5%
±10%
±20%
+80-20%
+100-0%
CAP. TOL.
500V
1000V
2000V
3000V
6000V
Code
2
5
6
Code
3
5
7
1
3 max.(500V)
4max.(HI-VOLT)
3.Rated Capacitance
Pitch (mm)
2.5±0.8
5±0.8
6.35±0.8
Code
7
0
Pitch (mm)
7.52±0.8
9.5±0.8
8.Lead Length
Lead length (mm) Code Lead length(mm)
3±0.8
0
10±0.8
5±0.8
1
25±3
7±0.8
2
3
4
4.Capacitance Tolerance
9.Lead Style
1max.(50V)
5 max.
5 max.
5.Rated Voltage
23 min
23 min
L
F
10.Packing
Code
A
R
B
Type
Ammo Pack Taping
Reel Pack Taping
BULK
50/100V Series
W.V.
(DC)
NPO
(CH)
0.5~47
47 ~68
75~100
120~150
180~200
220~270
300~330
470
TEMP.Char./Capacitance range(PF)
SL
33~150
180~220
250~330
390
470~560
680~820
B
(Y5E)(Y5P)
100~2200
3300
3900
4700~6800
7500~10000
E
(Z5U)
1000~5000
5600~6800
7500~10000
20000~22000
F
(Z5V)
3300~10000
12000~22000
DIA
(mm)
5±1
6±1
7±1
8±1
9±1
10±1
12±1
14±1
50V/100V
500V Series
W.V.
(DC)
TEMP.Char./Capacitance range(PF)
NPO
(CH)
0.5~50
47 ~56
65~82
91~100
100~120
150~180
200~220
SL
10~68
82~100
120~150
180~220
390~470
680~820
900~1000
B
(Y5E)(Y5P)
100~680
820~1200
1500~1800
2000~2700
3000~3300
3900~5200
5600~6800
8200~10000
E
(Z5U)
1000~2200
2200~3300
3900~5000
5600~6800
8200~10000
12000~15000
18000~22000
F
(Z5V)
2000~2200
2200~4700
5000~6800
8200~10000
DIA
(mm)
5±1
6±1
7±1
8±1
9±1
10±1
12±1
14±1
16±1
500V
15000~22000
27000~47000
100000
Semi-Conductive Series
W.V.
(DC)
12V/16V
TEMP.Char./Capacitance range(PF)
B
(Y5P)
E
(Y5U)
100000
1000
47000
F
(Y5V)
100000
220000
10000~22000
100000
DIA
(mm)
6±1
8±1
3.5±1
5±1
6±1
6.5±1
7±1
8±1
10±1
3.5±1
4.5±1
5±1
6±1
8±1
10±1
12.5±1
25V
10000
22000
33000
47000
68000
100000
100000
50V/100V
10000
15000
22000
33000~47000
100000
10000
22000
33000~47000
100000
220000
10000~22000
47000
100000
Taping Dimensions
P
2
P
P
2
P
d
H
W
1
d
W
H
W
1
W
P
1
F
P
0
D
0
P
1
F
P
o
D
o
Formed Leads and Taping
Symbol
Dimensions
P
P
0
P
1
P
2
Units : mm(inch)
Remarks
Less than 2 mm of cumulative error per 20 pitches
12.7±1
(
0.500±0.039
)
12.7±0.3
(
0.500±0.012
)
3
.85±0.5
(
0.152±0.020
)
6
.35±1
(
0.250±0.039
)
F
W
W
1
H
ØD
0
Ød
5
±0.8
(
0.197±0.031
)
18±0.5
(
0.709-0.020
)
9
±0.5
(
0.354-0.020
)
20+1.5-1.0
(
0.787+0.059-0.039
)
4
±2
(
0.157±0.008
)
0.6+0.06-0.05(
0.024+0.002-0.002
)
AMMO-PACK
340max
REEL-PACK
cassette
55max
30 1mm
240max
Reel
370mm max
RELIABILITY DATA
No
ITEM
.
1
Operating
CLASS I
-25°C~+85°C
CLASS II
CLASS III
Measuring Condition
B
:-
25°C~+85°C
F: -25°C~+85°C
(Y5V)
E&F
:
-25°C~+85°C
Retain the sample for 30 minutes at the temperature
specified below in the sequence listed in the table. Then
measure the capacitance in each step after thermal
equilibrium at each temperature is reached.
Step1
Step2
Step3
Step4
Step5
Room Operating
Room
Operating Room
Temp Temp(min)
Temp
Temp(min) Temp
25±2°C - 25±3°C 25±2°C
85±2°C
25±2°C
+10±2°C
Note that step fand2 do not apply for the SL characteristics.
Temperature Range
CH:0±60ppm/°C
Temperature
B:
±10%
SL:+350-1000ppm/°C
E:+22%-56%
2 Characteristics
F:+22%-82%
+22%
-82%
3 Capacitance
Within the specified tolerance
C≥30pF;Q≥1000
C<30pF;Q≥400+20·
c
B&E:tan
δ≤0.025
F: tan
δ≤0.05
F: tan
δ≤0.05
4 Q or Dissipation
Factor (tan
δ)
(
C is nominal capacitance)
5 Withstanding
Voltage
Insulation
6 Resistance
Shall be measured 25±2°C normal temperature
at the frequency and voltage
ClassI:1MHz±20%, 1±0.2Vrms
ClassII:1KHz±10%, 1±0.2Vrms
ClassIII:1KHz±20%, 0.5±0.05Vrms
No defects
Applied: Rated voltage
·3 (class I)
Rated voltage
·2.5 (class II)
Rated voltage
·2 (class III)
Duration:1 to 5 sec.
The charge/discharge current is less than 50mA.
More than 10GΩ or More than 1GΩ or
Apply rated voltage for
More than 10GΩ
200Ω·F, whichever is 20Ω·F, whichever is
25±2°C and 70% R.H. max.
less
less
1 minute at
16Vdc product: Measurement voltage is 25Vdc
Fix the capacitor, apply the tensile stress listed below
in the terminal extraction direction until the
designated value is reached. Then retain the capacitor
for 10±0.1 seconds as is.
Nominal wire diameter
0.5 mm 0.6 mm
Tensile stress
5N
10N
7
Pull Test
(Tensile stress)
Termination not to be broken or loosened
8 Solderability of
Leads
At least three-fourths of the immersed surface in the
Solder temperature:
230±5°C
circumference direction is covered with new solder.
Dipping: 3±0.5
sec
. (Flux shall be used)
±2.5% or ±0.25pF
The lead wire immersed in the melted solder
B : ±5%
F : ±30%
(Whichever is
1.5mm to 2mm from the capacitor body.
E : ±15%
(Y5V)
ΔC
greater)
CLASSI,II CLASSIII
F : ±20%
9
Resistance
to Solder
Solder temperature
350±10°C
260±5°C
Withstandi
No defects
Heat
Duration
3±0.5sec 5±0.5sec
ng voltage
Exterior
No abnormalities
±2.5% or ±0.25pF
(Whichever is
greater)
ΔC
B : ±5%
E : ±15%
F : ±20%
F
: ±30%
(Y5V)
The measurements after testing must be taken after
leaving the sample for 12 to 24 hours under normal
temperature and humidity conditions.
Fix the capacitor to the supporting jig in the same
manner and under the same conditions as(10).
Perform the five cycles according to the four heat
C≥30pF: Q≥1000
Q/D.F.
10 Thermal
shock
C<30pF:Q≥400+20
·
C
c is nominal capacitance
B&E:tan
δ≤0.025
F : tan
δ≤0.05
F : tan
δ≤0.05
(Y5V)
More than 10GΩ or
More than 10GΩ or
20Ω·F,whichever is less 20Ω·F,whichever is less
treatments listed in the following table.
Step 1
Step 2
Step 3
Step 4
I.R.
Withstandi
ng voltage
More than 10GΩ
No defects
No abnormalities
±5% or ±0.5pF
(Whichever is
greater)
C≥30pF: Q≥350
10pF<C<30pF:
Q≥275+5/2·C
C≤10pF: Q≥200+10·C
Exterior
ΔC
11
Moisture
resistance
Q/D.F.
Operating Room
Operating
Room
Temp(min) Temp
Temp(max) Temp
30±3
15
30±3
15
The measurements after testing must be taken after
leaving the sample for 12 to 24 hours under normal
temperature and humidity conditions.
B : ±10%
E : ±20%
F : ±30%
F
: ±30%
(Y5V)
Temperature:
40±2°C
Humidity 90 to 95% R.H.
Duration:500+24-0 Hrs.
The measurements after testing must be taken after
leaving the sample for 1 to 2 hours under normal
temperature and humidity conditions.
*
Perform a heat treatment at 40±2°C for 1
B&E:tan
δ≤0.05
F : tan
δ≤0.075
F : tan
δ≤0.075
(Y5V)
More than 1GΩ or
More than 500MΩ or
20Ω·F,whichever is less 10Ω·F,whichever is less
(steady
state)
I.R.
Withstandi
ng voltage
More than 1GΩ
No defects
No abnormalities
±5% or ±0.5pF
(Whichever is
greater)
C≥30pF: Q≥350
10pF<C<30pF:
Q≥275+5/2·C
Exterior
ΔC
12
High
Q/D.F.
hours. Remove and let sit for 1 to 2 hours at
normal temperature and humidity conditions.
Perform the initial measuremen
t
B : ±10%
E : ±20%
F : ±30%
F
: ±30%
(Y5V)
Applied Voltage:
Rated voltage·2(CLASSI,II)
Rated voltage·1.25(CLASSIII)
Temperature:
85±2°C
Duration:1000+48-0 Hrs.
Temperat
ure
loading
The charge/discharge current is less than 10mA
C≤10pF: Q≥200+10·C
The measurements after testing must be taken after
More than 1GΩ or
More than 500MΩ or
leaving the sample for 12 to 24 hours under normal
I.R.
More than 1GΩ
20Ω·F,whichever is less 10Ω·F,whichever is less
temperature and humidity conditions.
Withstandi
No defects
*
Perform a heat treatment at 85±2°C for 1
ng voltage
B&E:tan
δ≤0.05
F : tan
δ≤0.075
F : tan
δ≤0.075
(Y5V)
Exterior
No abnormalities
hours. Remove and let sit for 12 to 24 hours at
normal temperature and humidity conditions.
Perform the initial measuremen
t
1KV Series
W.V.
(DC)
TEMP.Char./Capacitance range(PF)
NPO
(CH)
1~10
12 ~33
39~50
56~68
79~90
100~120
150~180
200~220
SL
30~56
68~100
120~150
180~220
270~330
350~390
470~560
680~820
B
(Y5E)(Y5P)
100~470
500~1000
1500~1800
2000~2200
2700~3300
3900~4700
5000~6800
E
(Z5U)
1000~1200
1500~2200
2700~3300
3900~10000
8200~10000
12000
22000
F
(Z5V)
DIA
(mm)
5±1
6±1
7±1
8±1
9±1
10±1
11±1
12±1
14±1
20±1
1KV
4700
5000~10000
22000
22000
47000
2KV Series(Epoxy Coating)
TEMP.Char./Capacitance range(PF)
W.V.
(DC)
NPO
SL
B
E
(CH)
1~20
22 ~30
33~39
47~50
56~68
75~82
90~100
110~120
150
15~56
68~100
120~150
180
200~220
270~300
330
390
(Y5E)(Y5P)
100~470
560~1000
1200
1500
1800~2200
2700
3000~3300
3900
(Z5U)
1000~1200
1500~2200
2700~3300
3500~3900
4700~6800
8200~10000
F
(Z5V)
3300~3900
4700~5000
5600~6800
8200
10000
12000
DIA
(mm)
5±1
6±1
7±1
8±1
9±1
10±1
11±1
12±1
13±1
2KV
4700~5600
14±1
3KV Series(Epoxy Coating)
TEMP.Char./Capacitance range(PF)
W.V.
(DC)
NPO
SL
B
E
(CH)
1~18
20 ~30
33~39
47~56
62~68
75~82
90~100
110~120
150
15~47
50~68
82~100
120
150~180
200~220
270
300~330
(Y5E)(Y5P)
100~470
680~820
1000
1200
1500
1800
2000~2200
2700~3300
(Z5U)
1000~1200
1500
1800~2000
2200~2700
3000~6800
F
(Z5V)
1800~2200
2700~3300
3900
4700~5600
6800
8200
10000
DIA
(mm)
6±1
7±1
8±1
9±1
10±1
11±1
12±1
13±1
14±1
3KV
10000
6KV,10KV Series(Epoxy Coating)
TEMP.Char./Capacitance range(PF)
W.V.
(DC)
SL
B
5~22
27~39
47~68
82
100~120
150
(Y5E)(Y5P)
100~330
390~500
560~680
820
1000
1500
E
(Z5U)
1000
1500~2200
3300
DIA
(mm)
6±1.5
7±1.5
8±1.5
9±1.5
10±1.5
11±1.5
12±1.5
13±1.5
14±1.5
15±1.5
7±1.5
7±1.5
7±1.5
8±1.5
10±1.5
12±1.5
6KV
10KV
100~120
150~180
200~220
270~330
470~560
680
Temperature Dependency of Capacitance (Approx. Values)
请问谁能提供或者卖我一块带dac和adc的板子,xilinx的fpga
用于做无线通信实验 xilinx fpga板子 50w门或者以上吧 dac和adc100msps以内就可以了 麻烦了...
zgj250 淘e淘
基于STM32和汉枫LPB100无线WIFI模块的家电状态显示及控制系统
基于STM32和汉枫LPB100无线WIFI模块的家电状态显示及控制系统 家电状态显示及控制系统分为中央控制系统和安防子系统 中央控制系统采用STM32F103C8T6+汉枫LPB100为主要控制。 使用OLED作为家电 ......
z3512641347 stm32/stm8
DIY VGA活动硬件功能确定与原理图讨论
11月24日 -硬件原理图,欢迎讨论 https://bbs.eeworld.com.cn/thread-90402-1-1.html ----------------------------------------------------------------------------- STM32 & A ......
tzenmelew DIY/开源硬件专区
F28335的捕获模块用于PWM功能,遇到一个问题
如题,我将CAP配置为PWM功能,中断方式,定义了一个软件计数器用来对这个CAP中断次数计数,到达需要的次数后就对CAP3和CAP4两个寄存器清零,这样可以做到对输出的PWM脉冲个数进行控制,我在一个 ......
asdmaill 微控制器 MCU
芯片封装方式大全
各种 IC 封装形式 按用途分类 集成电路按用途可分为电视机用集成电路。音响用集成电路、影碟机用集成电路、录像机用集 成电路、电脑(微机)用集成电路、电子琴用集成电路、通 ......
阿亮33 综合技术交流
高价悬赏~!!!之前图没上~现在补上了
大家好!本人有个功能想要实现,无奈自己现在单片机软件还是一头雾水,特向各位大侠求助~需要实现的功能是这样的: 如图,在控制端获取键盘鼠标的操作,然后通过USB或者网线输出,经过转换 ......
hxy9983 DIY/开源硬件专区

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2181  158  1689  1845  1968  44  4  35  38  40 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved