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IS61LF204836B-7.5TQLI

产品描述sram 72m 3.3V/2.5V, 7.5ns 2mx36 sync sram
产品类别半导体    其他集成电路(IC)   
文件大小1MB,共34页
制造商All Sensors
标准  
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IS61LF204836B-7.5TQLI概述

sram 72m 3.3V/2.5V, 7.5ns 2mx36 sync sram

IS61LF204836B-7.5TQLI规格参数

参数名称属性值
ManufactureISSI
产品种类
Product Category
SRAM
RoHSYes
Memory Size72 Mbi
Organizati2 M x 36
Access Time7.5 ns
电源电压-最大
Supply Voltage - Max
3.3 V
Supply Voltage - Mi2.5 V
Maximum Operating Curre240 mA
最大工作温度
Maximum Operating Temperature
+ 85 C
最小工作温度
Minimum Operating Temperature
- 40 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
TQFP-100
系列
Packaging
Tray
Maximum Clock Frequency117 MHz
Memory TypeSynchronous
工厂包装数量
Factory Pack Quantity
72
类型
Type
Synchronous Flow-Through SRAM

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IS61LF204836B, IS61VF/VVF204836B
IS61LF409618B, IS61VF/VVF409618B
2M x 36, 4M x 18
72 Mb SYNCHRONOUS
FLOW-THROUGH
STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
sion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LF: V
dd
3.3V (+ 5%),
V
ddq
3.3V/2.5V (+ 5%)
VF: V
dd
2.5V (+ 5%),
V
ddq
2.5V (+ 5%)
VVF: V
dd
1.8V (+ 5%),
V
ddq
1.8V (+ 5%)
• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-
pin PBGA packages
• Lead-free available
ADVANCED INFORMATION
OCTOBER 2012
DESCRIPTION
The 72Mb product family features high-speed, low-power
synchronous static
RAMs
designed to provide burstable,
high-performance memory for communication and network-
ing applications. The
IS61LF/VF204836B is organized as
2,096,952 words by 36 bits. The IS61LF/VF409618B
is
organized as 4,193,904 words by 18 bits. Fabricated with
ISSI
's advanced CMOS technology, the device integrates
a 2-bit burst counter, high-speed SRAM core, and high-
drive capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be writ-
ten. Byte write operation is performed by using byte write
enable (BWE)
input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Inter-
leave burst is achieved when this pin is tied HIGH or left
floating.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
10/15/2012
1

IS61LF204836B-7.5TQLI相似产品对比

IS61LF204836B-7.5TQLI IS61LF204836B-7.5TQLI-TR
描述 sram 72m 3.3V/2.5V, 7.5ns 2mx36 sync sram sram 72m 3.3V/2.5V, 7.5ns 2mx36 sync sram
Manufacture ISSI ISSI
产品种类
Product Category
SRAM SRAM
RoHS Yes Yes
Memory Size 72 Mbi 72 Mbi
Organizati 2 M x 36 2 M x 36
Access Time 7.5 ns 7.5 ns
电源电压-最大
Supply Voltage - Max
3.3 V 3.3 V
Supply Voltage - Mi 2.5 V 2.5 V
Maximum Operating Curre 240 mA 240 mA
最大工作温度
Maximum Operating Temperature
+ 85 C + 85 C
最小工作温度
Minimum Operating Temperature
- 40 C - 40 C
安装风格
Mounting Style
SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
TQFP-100 TQFP-100
系列
Packaging
Tray Reel
Maximum Clock Frequency 117 MHz 117 MHz
Memory Type Synchronous Synchronous
工厂包装数量
Factory Pack Quantity
72 800
类型
Type
Synchronous Flow-Through SRAM Synchronous Flow-Through SRAM
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