Small Surface-Mount type (IF=1A and more)
From 30 to 60V/1 to 5A Middle power Schottky barrier diodes
Overview
This product is a schottky barrier diode (SBD) with fine
diffusion process. Adding to the existing small signal lineups,
we have developed the middle power products. By adopting the
fine diffusion process and JBS structure*, we have achieved the
low FV, low IR characteristic to contribute to increase in
efficiency of the set as TV and PC with a little element loss.
This product package (TMiniP2-F2-B,Mini2-F3-B) is a thin
package to contribute to save space of the set.
※Junction
Barrier Schottky
Thin Type Package
Feature
•Miniaturization
and thin packaging
•Possible
to rectify: Forward current (average value) I
F
(AV)=1A
•Environmentally
friendly Halogen free package
Applications
TV, PC, Printers
TMiniP2-F2-B
Mini2-F3-B
Main characteristics (Ta=25°C）
(Tentative)
Part
Number
DB24301
DB24305
DB24312
DB24401
DB24402
DB24403
DB24405
DB24605
DB24606
DB2W401
DB2W402
DB2W403
Reverse
voltageV
R
(V)
30
30
30
40
40
40
40
60
60
40
40
40
Forward
current
I
F
(A)
2
3
5
1
2
3
3
1
3
1
2
3
Forward voltage
※
V
F
max. (V)
0.39
0.45
0.51
0.39
0.47
0.54
0.44
0.45
0.70
0.39
0.47
0.54
Reverse current
※
I
R
max. (μA)
1300
300
300
250
250
250
2400
350
350
250
250
250
Development
Schedule（ES）
November, 2011
December,2011
November, 2011
December ,2011
TMiniP2-F2-B
(3.8×2.4×0.85
)
Package
V
R
(V)
30
30
30
40
40
40
40
60
60
40
40
40
Mini2-F3-B
(2.6×1.6×0.80)
I
F
(A)
2
3
5
1
2
3
3
1
3
1
2
3
December, 2011
November, 2011
November, 2011
November, 2011
December ,2011
December ,2011
November, 2011
November, 2011
*Specifications and development schedule are target values.
New publication, effective from 1 July 2011
DD00021AE
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