The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 12 March 2007.
INCH-POUND
MIL-PRF-19500/556H
12 December 2006
SUPERSEDING
MIL-PRF-19500/556G
5 November 2003
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
TYPES 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, AND 2N6786U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,
MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as
specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 [similar to TO-205AF (formerly TO-39)], figure 2 (LCC), and figure 3 for
JANHC and JANKC die dimensions.
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
Type
P
T
(1)
T
C
=
+25°C
W
2N6782, U
2N6784, U
2N6786, U
15
15
15
P
T
T
A
= +25°C
W
0.8
0.8
0.8
V dc
100
200
400
V dc
100
200
400
V dc
±20
±20
±20
V
DS
V
DG
V
GS
I
D1
(2) (3)
T
C
= +25°C
A dc
3.5
2.25
1.25
I
D2
(2)
T
C
=
+100°C
A dc
2.25
1.50
0.80
A dc
3.50
2.25
1.25
I
S
I
DM
(4)
T
J
and
T
STG
°C
-55 to
+150
400
V
ISO
70,000
foot
altitude
V dc
A(pk)
14.0
9.0
5.5
(1)
(2)
Derate linearly 0.12 W/°C for T
C
> +25°C.
The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal wires
and may be limited by pin diameter:
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
See figure 4, maximum drain current graph.
I
DM
= 4 x I
D1
as calculated in note 2.
(3)
(4)
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/556H
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.160
.180
4.06
4.57
.335
.370
8.51
9.40
.009
.041
0.23
1.04
.028
.034
0.71
0.86
.029
.045
0.74
1.14
.016
.021
0.41
0.53
.500
.750
12.7
19.05
.200 TP
5.08 TP
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.050
1.27
.010
0.25
45° TP
45° TP
Ltr
CD
CH
HD
h
J
k
LD
LL
LS
LU
L1
L2
P
Q
r
α
Notes
2
3
7, 8
7, 8
6
7, 8
7, 8
7, 8
5
4
9
6
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Beyond radius (r) maximum, J shall be held for a minimum length of .011 (0.28 mm).
3. Dimension k measured from maximum HD.
4. Outline in this zone is not controlled.
5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic
handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and
beyond LL minimum.
8. All three leads.
9. Radius (r) applies to both inside corners of tab.
10. Drain is electrically connected to the case.
11. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions for TO-205AF.
2
MIL-PRF-19500/556H
Dimensions
Ltr.
Inches
Min
Max
.345
.360
.280
.295
.095
.115
.040
.055
.055
.065
.050 BSC
.025 BSC
.008 BSC
.020
.030
.105 REF
.120 REF
.045
.055
.070
.080
.120
.130
Millimeters
Min
Max
8.76
9.14
7.11
7.49
2.41
2.92
1.02
1.40
1.40
1.65
1.27 BSC
0.635 BSC
0.203 BSC
0.51
0.76
2.67 REF
3.05 REF
1.14
1.40
1.78
2.03
3.05
3.30
18
1
BL
BW
CH
LL1
LL2
LS
LS1
LS2
LW
Q1
Q2
Q3
TL
TW
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
4. Ceramic package only.
FIGURE 2. Physical dimensions for LCC.
3
MIL-PRF-19500/556H
2N6782, 2N6784, and 2N6786
Ltr
A
B
C
D
E
F
Dimensions - 2N6782
Inches
Millimeters
Min
Max
Min
Max
0.082
0.092
2.08
2.34
0.059
0.069
1.48
1.74
0.021
0.031
0.53
0.79
0.020
0.030
0.50
0.76
0.013
0.023
0.32
0.58
0.014
0.024
0.34
0.60
Dimensions - 2N6784
Inches
Millimeters
Min
Max
Min
Max
0.082
0.092
2.08
2.34
0.062
0.072
1.57
1.83
0.020
0.030
0.50
0.76
0.019
0.029
0.47
0.73
0.012
0.022
0.31
0.57
0.013
0.023
0.32
0.58
Dimensions - 2N6786
Inches
Millimeters
Min
Max
Min
Max
0.101
0.111
2.55
2.81
0.071
0.081
1.81
2.07
0.020
0.030
0.50
0.76
0.019
0.029
0.47
0.73
0.012
0.022
0.31
0.57
0.013
0.023
0.32
0.58
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Unless otherwise specified, tolerance is
±
.005 inch (0.13 mm).
4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and
the back contact is the drain. The top metal is aluminum.
5. Die thickness is .0187 inch (0.475 mm)
±
.0050 inch (0.130 mm).
* FIGURE 3. JANHCA and JANKCA die dimensions.
4
MIL-PRF-19500/556H
* 1.4 Primary electrical characteristics at T
C
= +25°C.
Min
Type
V
(BR)DSS
V
GS
= 0
I
D
= 1.0
mA dc
V dc
Min
2N6782, U
2N6784, U
2N6786, U
100
200
400
2.0
2.0
2.0
V
GS(TH)
V
DS
≥
V
GS
I
D
= 0.25
mA dc
Max I
DSS1
V
GS
= 0
V
DS
= 80
percent of
rated V
DS
µA
dc
Max r
DS(ON)
(1)
V
GS
= 10 V dc
T
J
= +25°C
at I
D2
ohm
T
J
= +150°C
at I
D2
ohm
R
θJC
max
(2)
V dc
Max
4.0
4.0
4.0
°C/W
25
25
25
0.60
1.50
3.60
1.20
3.15
9.00
8.33
8.33
8.33
(1) Pulsed (see 4.5.1).
(2) See figure 5, thermal impedance curves.
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
* DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
* DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
5
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