Freescale Semiconductor
Technical Data
Document Number: MRF7S19100N
Rev. 3, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1000 mA, P
out
= 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 30%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW
Peak Tuned Output Power
•
P
out
@ 1 dB Compression Point
w
100 W CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Designed for Digital Predistortion Error Correction Systems
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF7S19100NR1
MRF7S19100NBR1
1930 - 1990 MHz, 29 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF7S19100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF7S19100NBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +10
32, +0
- 65 to +200
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82°C, 100 W CW
Case Temperature 79°C, 29 W CW
Symbol
R
θJC
Value
(2,3)
0.57
0.68
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRF7S19100NR1 MRF7S19100NBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 320
μAdc)
Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 1000 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.2 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
1.54
553.5
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.2
2
2.8
0.24
3
4
0.4
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
500
μAdc
μAdc
nAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 29 W Avg., f1 = 1930 MHz,
f2 = 1990 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
16.5
28.5
5.7
—
—
17.5
30
6.1
- 38
- 12
19.5
—
—
- 36
- 10
dB
%
dB
dBc
dB
1. V
GG
= 11/10 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S19100NR1 MRF7S19100NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 100 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 29 W Avg.
Average Group Delay @ P
out
= 100 W CW, f = 1960 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 100 W CW,
f = 1960 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Symbol
VBW
—
30
—
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50
οhm
system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, 1930 - 1990 MHz Bandwidth
G
F
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
1
2.15
28.8
0.019
0.015
—
—
—
—
—
dB
ns
°
dB/°C
dBm/°C
MRF7S19100NR1 MRF7S19100NBR1
RF Device Data
Freescale Semiconductor
3
R1
V
BIAS
+
C1
R2
Z6
V
SUPPLY
C2
C3
Z5
Z12
RF
OUTPUT
C4
C5
C6
RF
INPUT
R3
Z1
C7
Z2
Z3
Z4
Z7
Z8
Z9
Z10
C8
Z11
Z13
DUT
V
SUPPLY
C9
C10
C11
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.744″
0.383″
0.600″
0.505″
1.086″
0.452″
0.161″
x 0.084″
x 0.084″
x 0.230″
x 0.800″
x 0.080″
x 0.080″
x 0.880″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z8
Z9
Z10
Z11
Z12, Z13
PCB
0.319″ x 0.880″ Microstrip
0.390″ x 0.215″ Microstrip
0.627″ x 0.084″ Microstrip
0.743″ x 0.084″ Microstrip
1.326″ x 0.121″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030,
ε
r
= 2.55
Figure 1. MRF7S19100NR1(NBR1) Test Circuit Schematic
Table 6. MRF7S19100NR1(NBR1) Test Circuit Component Designations and Values
Part
C1
C2, C5, C6, C10, C11
C3, C7
C4, C9
C8
R1
R2
R3
Description
10
μF,
35 V Tantalum Capacitor
10
μF,
50 V Chip Capacitors
5.1 pF Chip Capacitors
8.2 pF Chip Capacitors
10 pF Chip Capacitor
1 KΩ, 1/4 W Chip Resistor
10 KΩ, 1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
T491D106K035AT
GRM55DR61H106KA88L
ATC100B5R1BT500XT
ATC100B8R2BT500XT
ATC100B100BT500XT
CRCW12061001FKEA
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
Kemet
Murata
ATC
ATC
ATC
Vishay
Vishay
Vishay
MRF7S19100NR1 MRF7S19100NBR1
4
RF Device Data
Freescale Semiconductor
R2
C3
C4
C5
C6
R1
C1
C2
R3
CUT OUT AREA
C7
C8
C10
MRF7S19100N/NB Rev. 1
C11
C9
Figure 2. MRF7S19100NR1(NBR1) Test Circuit Component Layout
MRF7S19100NR1 MRF7S19100NBR1
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
