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BYVB32-50

产品描述18 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
产品类别半导体    分立半导体   
文件大小82KB,共2页
制造商GE Sensing ( Amphenol Advanced Sensors )
官网地址http://www.vishay.com/
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BYVB32-50概述

18 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB

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NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
BYVB32-50 THRU BYVB32-200
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 150 Volts
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
0.047 (1.19)
0.055 (1.40)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
Forward Current -
18.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Dual rectifier construction, positive centertap
Glass passivated chip junctions
Low power loss
Low forward voltage,
high current capability
High surge capability
Superfast recovery time for high efficiency
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
0.320 (8.13)
0.360 (9.14)
1
K
2
0.575 (14.60)
0.625 (15.88)
SEATING
PLATE
-T-
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.027 (0.686)
0.037 (0.940)
0.080 (2.03)
0.110 (2.79)
0.095 (2.41)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC TO-263AB molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
PIN 1
K - HEATSINK
PIN 2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
BYVB32-50
BYVB32-100
BYVB32-150
BYVB32-200
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=120°C
Peak forward surge current
10ms single half sine-wave superimposed at
at T
J
=150°C
Maximum instantaneous forward voltage per leg at:
I
F
=20A,
I
F
=5.0A, T
J
=100°C
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance
(NOTE 2)
Maximum thermal resistance per leg
(NOTE 3)
Operating and storage temperature range
T
J
=25°C
T
J
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
18.0
150
105
150
200
140
200
Volts
Volts
Volts
Amps
I
FSM
150.0
Amps
V
F
1.15
0.85
10.0
600.0
35.0
45.0
3.0
-65 to +150
Volts
µA
ns
pF
°C/W
°C
I
R
t
rr
C
J
R
ΘJC
T
J
, T
STG
Maximum reverse recovery time per leg
(NOTE 1)
NOTES:
(1) Reverse recovery test conditions: I
F
=1A V
R
=30V, di/dt=100A/µs, Irr=10% I
RM
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case per leg mounted on heatsink
NOTICE:
Advanced product information is subject to change without notice
4/98

BYVB32-50相似产品对比

BYVB32-50 BYVB32-200 BYVB32-100 BYVB32-150
描述 18 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB 18 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 18 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB 18 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB

 
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