CEDM8001
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM8001 is
a P-Channel Enhancement-mode silicon MOSFET,
manufactured by the P-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers low rDS(ON) and low
theshold voltage.
MARKING CODE: F
COMPLEMENTARY N-CHANNEL: CEDM7001
SOT-883L CASE
APPLICATIONS:
• Load/Power switches
• DC - DC converters
• Battery powered portable equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
FEATURES:
• 100mW Power Dissipation
• 0.4mm low package profile
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small leadless surface mount package
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
20
10
100
200
100
-65 to +150
UNITS
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=10V, VDS=0
IDSS
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton
toff
VDS=20V, VGS=0
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=4.0V, ID=10mA
VGS=2.5V, ID=10mA
VGS=1.5V, ID=1.0mA
VDS=10V, ID=100mA
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
VDS=10V, VGS=4.5V, ID=100mA
VDS=10V, VGS=4.5V, ID=100mA
VDS=10V, VGS=4.5V, ID=100mA
VDD=3.0V, VGS=2.5V, ID=10mA
VDD=3.0V, VGS=2.5V, ID=10mA
100
15
45
15
0.658
0.158
0.181
35
80
20
0.6
1.9
2.4
MAX
1.0
1.0
1.1
8.0
12
45
UNITS
μA
μA
V
V
Ω
Ω
Ω
mS
pF
pF
pF
nC
nC
nC
ns
ns
R8 (19-September 2014)
CEDM8001
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-883L CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: F
Package Type Options
(all dimensions are maximum - in mm)
Package
SOT-883L
SOT-883VL
SOT-953
SOT-523
Length
1.05
1.05
1.05
1.70
Width
0.65
0.65
1.05
1.70
Height
0.40
0.32
0.50
0.78
PD (mW)
100
100
250
250
Central Item Number
CEDM8001
CEDM8001VL
CMNDM8001
CMUDM8001
R8 (19-September 2014)
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CEDM8001
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R8 (19-September 2014)
w w w. c e n t r a l s e m i . c o m
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
• Custom bar coding for shipments
• Inventory bonding
• Custom product packing
• Consolidated shipping options
DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2
nd
day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
Worldwide Field Representatives:
www.centralsemi.com/wwreps
Worldwide Distributors:
www.centralsemi.com/wwdistributors
For the latest version of Central Semiconductor’s
LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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