MUR5040 thru MUR5060R
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V V
RRM
DO-5 Package
V
RRM
= 50 V - 600 V
I
F
= 50 A
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
125 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
MUR5040 (R)
400
280
400
50
600
-65 to 175
-65 to 175
MUR5060 (R)
600
420
600
50
600
-65 to 175
-65 to 175
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 50 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
MUR5040 (R)
1.3
10
3
MUR5060 (R)
1.7
10
3
Unit
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
75
90
nS
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