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ALD1102BSAL: 产品描述MOSfet dual N-Ch fet 10.6 500mw 0.7V 10ohm; 产品类别半导体分立半导体; 文件大小73KB，共8页; 制造商All Sensors; 标准

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MOSfet dual N-Ch fet 10.6 500mw 0.7V 10ohm

参数名称	属性值
Manufacture	Advanced Linear Devices
产品种类 Product Category	MOSFET
RoHS	Yes
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	- 12 V
Rds On - Drain-Source Resistance	10 Ohms
Configurati	Dual
Pd - Power Dissipati	500 mW
系列 Packaging	Tube
工厂包装数量 Factory Pack Quantity	50

	ALD1102BSAL	ALD1102SAL	ALD1102PAL	ALD1102APAL	ALD1102BPAL	ALD1102ASAL
描述	MOSfet dual N-Ch fet 10.6 500mw 0.7V 10ohm	mosfet dual P-channel pair	mosfet dual P-channel pair	mosfet dual P-channel pair	mosfet dual P-channel pair	mosfet dual P-channel pair
Manufacture	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices
产品种类 Product Category	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET
RoHS	Yes	Yes	Yes	Yes	Yes	Yes
Transistor Polarity	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel
Vds - Drain-Source Breakdown Voltage	- 12 V	- 12 V	- 12 V	- 12 V	- 12 V	- 12 V
Rds On - Drain-Source Resistance	10 Ohms	180 Ohms	180 Ohms	180 Ohms	180 Ohms	180 Ohms
Configurati	Dual	Dual	Dual	Dual	Dual	Dual
Pd - Power Dissipati	500 mW	500 mW	500 mW	500 mW	500 mW	500 mW
工厂包装数量 Factory Pack Quantity	50	50	50	50	50	50
Vgs - Gate-Source Breakdown Voltage	-	- 13.2 V	- 13.2 V	- 13.2 V	- 13.2 V	- 13.2 V
Id - Continuous Drain Curre	-	- 16 mA	- 16 mA	- 16 mA	- 16 mA	- 16 mA
最大工作温度 Maximum Operating Temperature	-	+ 70 C	+ 70 C	+ 70 C	+ 70 C	+ 70 C
安装风格 Mounting Style	-	SMD/SMT	Through Hole	Through Hole	Through Hole	SMD/SMT
封装 / 箱体 Package / Case	-	SOIC-8	PDIP-8	PDIP-8	PDIP-8	SOIC-8
Channel Mode	-	Enhanceme	Enhanceme	Enhanceme	Enhanceme	Enhanceme
Forward Transconductance - Mi	-	0.004 S	0.004 S	0.004 S	0.004 S	0.004 S
最小工作温度 Minimum Operating Temperature	-	0 C	0 C	0 C	0 C	0 C

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