DATA SHEET
SEMICONDUCTOR
SURFACE MOUNT ULTRAFAS T RECTIFI ER
VOLTAGE - 50 to 1000 Volts CURR ENT - 8.0 Amperes
FEATURES
•
For surface mounted applications
•
Low profile package
•
Built-in strain relief
•
Easy pick and place
•
Ultrafast recovery times for high efficiency
•
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
•
Glass passivated junction
•
High temperature soldering:
260
O
C /10 seconds at terminals
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.103(2.62)
.079(2.00)
.280(7.11)
.260(6.60)
.012(.305)
.006(.152)
.128(3.25)
.108(2.75)
.245(6.22)
.220(5.59)
UF8A THRU UF8M
SMC/DO-214AB
Unit:inch(mm)
MECHANICAL DATA
•
Case: JEDEC DO-214AB molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
•
Method 2026
•
Polarity: Indicated by cathode band
•
Standard packaging: 16mm tape (EIA-481)
Weight: 0.007 ounce, 0.21 gram
.050(1.27)
.030(0.76)
.320(8.13)
.305(7.75)
.008(.203)
.002(.051)
CHARACTERISTICS
Maximum Recurrent Peak Reverse V oltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine- wave
super imposed on rated load (JEDEC METHOD)
Maxi mum f orward Voltage at 8.0A DC
Maxi mum DC Reverse Cur rent
at Rated DC Blocking Voltage
@TJ =25
°C
@TJ =100
°C
@TL =75
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
UF8A
50
35
50
UF8B
100
70
100
UF8D
200
140
200
UF8G
400
280
400
8.0
UF8J
600
420
600
UF8K
800
560
800
UF8M
1000
700
1000
UNIT
V
V
V
A
I
FSM
100
A
V
F
I
R
T
RR
C
J
R
θJL
T
J
T
STG
1.0
1.3
10
100
50
20
30
-55 to +150
-55 to +150
1.5
1.7
V
uA
Maximum Reverse Recovery Time (Note 1)
Typical Junction
Capacitance (Note 2)
Typical Thermal Resistance (Note 3 )
Operating Temperature Range
Storage Temperature Range
75
10
ns
pF
°C/W
°C
°C
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
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REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF8A THRU UF8M
t
rr
+0.5A
AVERAGE FORWARD CURRENT,
AMPERES
3.0
2.5
2.0
1.5
SINGLE PHASE HALF
1.0
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
60Hz RESISTIVE OR
LOAD P.C.B MOUNTED
0.5
0.315×0.315"(8.0×8.0mm)
COPPER PAD
50
60
70
80
90
100 110 120 130 140 150
LEAD TEMPERATURE,
O
C
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC
AND TEST CIRCUIT DIAGRAM
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
100
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
INSTANTANEOUS FORWARD CURRENT AMPERES
100
UF8A ~ UF8D
UF8G
10
T
J
= 150
C
10
T
J
= 100
O
C
O
UF8M
1
1
T
J
= 25
C
O
0.1
0.1
T
J
= 25
O
C
PULSE WIDTH = 300 us
2% DUTY CYCLE
0.01
0
20
40
60
80
100
120
140
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF PEAK REVERSE VOLTAGE VOLTS
INSTANTANEOUS FORWARD VOLTAGE VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
160
TJ = 25
O
C
f = 1MHZ
Vsig = 50mVp-p
200
PEAK FORWARD SURGE
CURRENT, AMPERES
140
100
CAPACITANCE, pF
120
100
80
60
40
UF8G ~ UF8M
UF8A ~ UF3D
50
8.3ms SINGLE HALF SINE
WAVE JEDEC METHOD
10
1
5
10
50
100
20
.1
.5
1
2
5
10
20
50
100 200
500
1000
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE VOLTS
Fig. 5-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
Fig. 6-TYPICAL JUNCTION CAPACITANCE
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REV.02 20110725
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