CT3331-R3
P-Channel Enhancement MOSFET
Features
•
Drain-Source Breakdown Voltage V
DSS
- 200 V
•
Drain-Source On-Resistance
R
DS(ON)
2.3
Ω
, at V
GS
= - 10V, I
DS
= - 0.2A
R
DS(ON)
2.4
Ω
, at V
GS
= - 4.5V, I
DS
= - 0.2A
•
Advanced high cell density Trench Technology
•
RoHS Compliance & Halogen Free
•
ESD Protection
Description
The CT3331-R3 uses high performance Trench
Technology to provide excellent R
DS(ON)
and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Applications
•
Switches
•
Power supply circuits
•
Motor controls
•
Drivers
Package Outline
Drain
Gate
Gate
Source
Source
CT Micro
Proprietary & Confidential
,℃
•
Continuous Drain Current at T
A
=25
I
D
= - 0.4A
Schematic
Drain
Page 1
Rev 3
Oct, 2014
CT3331-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25
o
C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameters
Drain-Source Voltage
Gate-Source Voltage
Ratings
-200
±20
-0.4
-1.6
1.1
-55 to 150
-55 to 150
Units
V
V
A
A
W
o
Notes
Pulsed Drain Current
Total Power Dissipation @T
A
=25
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
R
JA
Parameters
Thermal Resistance
Test Conditions
Junction-Ambient (t=10s)
CT Micro
Proprietary & Confidential
℃
Min
-
Page 2
Continuous Drain Current @T
A
=25
1
1
2
℃
C
o
C
Typ
121
Max
-
Units
o
C
Notes
1,4
/W
Rev 3
Oct, 2014
CT3331-R3
P-Channel Enhancement MOSFET
Electrical Characteristics
T
Static Characteristics
Symbol
B
VDSS
I
DSS
I
GSS
A
= 25° (unless otherwise specified)
C
Parameters
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Test Conditions
V
GS
=0V, I
D
= - 250µA
V
DS
= -200V, V
GS
= 0V
V
GS
=
±16V,
V
DS
= 0V
Min
-200
-
-
Typ
-
-
-
Max
-
-1
±10
Units
V
µA
µA
Notes
On Characteristics
Symbol
Parameters
Drain-Source On-Resistance
V
GS
= -4.5V, I
D
= -200mA
-
-1.2
2.4
-
4.5
-2.6
Gate-Source Threshold Voltage
V
GS
= V
DS
, I
D
= -250µA
Test Conditions
V
GS
= -10V, I
D
= -200mA
Min
-
Typ
2.3
Max
4
Units
Notes
3
3
R
DS(ON)
V
GS(TH)
V
Dynamic Characteristics
Symbol
Parameters
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
DS
= - 20V ,
V
GS
= 0V,
f=1MHz
Min
-
-
-
Typ
350
30
12
Max
-
-
-
pF
Units
Notes
C
ISS
C
OSS
C
RSS
Switching Characteristics
Symbol
Parameters
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V
DS
= -100V , V
GS
= -10V,
Gate-Source Charge
I
D
= -400mA
Gate-Drain (Miller) Charge
-
0.8
-
V
DS
= -100V , V
GS
= - 4.5V,
R
G
= 4.7 ,
I
D
= -2.8A
Test Conditions
Min
-
-
-
-
-
-
Typ
10
4
43
42
7.0
1.0
-
-
nC
Max
-
-
ns
-
Units
Notes
T
D(ON)
T
R
T
D(OFF)
T
F
Q
G
Q
GS
Q
GD
CT Micro
Proprietary & Confidential
Page 3
Ω
Ω
Rev 3
Oct, 2014
CT3331-R3
P-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Body Diode Forward Voltage
Body Diode Continuous Current
Test Conditions
V
GS
= 0V, I
SD
= -1.0A
Min
Typ
-0.78
Max
-1.2
-2.8
Units
V
A
1
Notes
V
SD
I
SD
Note:
2. Device mounted on a glass-epoxy board
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size
µ
3. The data tested by pulsed , pulse width
4. Thermal Resistance follow JESD51-3.
300 s , duty cycle
2%
CT Micro
Proprietary & Confidential
℃
1. The power dissipation is limited by 150
junction temperature.
Page 4
Rev 3
Oct, 2014
CT3331-R3
P-Channel Enhancement MOSFET
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev 3
Oct, 2014
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