Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
BY229F, BY229X series
SYMBOL
QUICK REFERENCE DATA
V
R
= 200 V/ 400 V/ 600 V/800 V
I
F(AV)
= 8 A
I
FSM
≤
60 A
t
rr
≤
135 ns
k
1
a
2
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft
recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.
The BY229F series is supplied in the conventional leaded SOD100 package.
The BY229X series is supplied in the conventional leaded SOD113 package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
isolated
SOD100
case
SOD113
case
1
2
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
RWM
V
R
I
F(AV)
PARAMETER
Peak non-repetitive reverse
voltage
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
square wave;
δ
= 0.5;
T
hs
≤
83 ˚C
sinusoidal; a = 1.57;
T
hs
≤
90 ˚C
t = 25
µs; δ
= 0.5;
T
hs
≤
83 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 150 ˚C
prior to surge; with
reapplied V
RWM(max)
t = 10 ms
CONDITIONS
BY229F- / BY229X-
-
-
-
-
-
-
-
-
-
-
MIN.
200
200
200
150
150
MAX.
400
400
400
300
300
8
7
11
16
60
66
600
600
600
500
500
800
800
800
600
600
UNIT
V
V
V
V
A
A
A
A
A
A
I
F(RMS)
I
FRM
I
FSM
RMS forward current
Peak repetitive forward current
Peak non-repetitive forward
current
I
2
t
T
stg
T
j
I
2
t for fusing
Storage temperature
Operating junction temperature
-
-40
-
18
150
150
A
2
s
˚C
˚C
1. Neglecting switching and reverse current losses.
September 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
isol
Peak isolation voltage from
both terminals to external
heatsink
CONDITIONS
BY229F, BY229X series
MIN.
-
TYP. MAX. UNIT
-
1500
V
SOD100 package; R.H.
≤
65%; clean and
dustfree
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
both terminals to external
sinusoidal waveform; R.H.
≤
65%; clean
heatsink
and dustfree
Capacitance from pin 1 to
external heatsink
f = 1 MHz
-
-
2500
V
C
isol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
7.2
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current
CONDITIONS
I
F
= 20 A
V
R
= V
RWM
; T
j
= 125 ˚C
MIN.
-
-
TYP.
1.5
0.1
MAX.
1.85
0.4
UNIT
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
t
rr
Q
s
dI
R
/dt
PARAMETER
Reverse recovery time
Reverse recovery charge
Maximum slope of the reverse
recovery current
CONDITIONS
I
F
= 1 A; V
R
> 30 V; -dI
F
/dt = 50 A/µs
I
F
= 2 A; V
R
> 30 V; -dI
F
/dt = 20 A/µs
I
F
= 2 A; -dI
F
/dt = 20 A/µs
MIN.
-
-
-
TYP.
100
0.5
50
MAX.
135
0.7
60
UNIT
ns
µC
A/µs
September 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY229F, BY229X series
I
dI
F
dt
F
80
70
IFS(RMS) / A
BY229
IFSM
trr
time
60
50
40
30
Qs
25%
100%
20
10
I
R
I
rrm
0
1ms
10ms
0.1s
tp / s
1s
10s
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum non-repetitive rms forward current.
I
F
= f(t
p
); sinusoidal current waveform; T
j
= 150˚C prior
to surge with reapplied V
RWM
.
IF / A
Tj = 150 C
Tj = 25 C
BY229F
20
PF / W
Vo = 1.25 V
Rs = 0.03 Ohms
BY329
Ths(max) / C
54
D = 1.0
78
30
15
0.5
0.2
0.1
I
t
p
D=
t
p
T
t
20
10
102
10
5
T
126
typ
max
0
0
2
4
6
IF(AV) / A
8
10
150
12
0
0
0.5
1
VF / V
1.5
2
Fig.2. Maximum forward dissipation, P
F
= f(I
F(AV)
);
square wave current waveform; parameter D = duty
cycle = t
p
/T.
BY329
Ths(max) / C
a = 1.57
1.9
10
4
5
126
2.2
2.8
102
Fig.5. Typical and maximum forward characteristic;
I
F
= f(V
F
); parameter T
j
15
PF / W
Vo = 1.25 V
Rs = 0.03 Ohms
78
10
Qs / uC
Tj = 150 C
Tj = 25 C
BY329
IF = 10 A
10 A
2A
1
1A
2A
1A
0
0
2
4
IF(AV) / A
6
150
8
0.1
1
10
-dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation, P
F
= f(I
F(AV)
);
sinusoidal current waveform; parameter a = form
factor = I
F(RMS)
/I
F(AV)
.
Fig.6. Maximum Q
s
at T
j
= 25˚C and 150˚C
September 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY229F, BY229X series
1000
trr / ns
BY329
IF = 10 A
10A
1A
1A
10
Transient thermal impedance, Zth j-hs (K/W)
1
100
0.1
0.01
P
D
t
p
D=
Tj = 150 C
Tj = 25 C
10
1
10
-dIF/dt (A/us)
100
0.001
1us
T
t
p
T
t
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY229F
10s
Fig.7. Maximum t
rr
measured to 25% of I
rrm
; T
j
= 25˚C
and 150˚C
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
100
Cd / pF
BY329
10
1
1
10
VR / V 100
1000
Fig.8. Typical junction capacitance C
d
at f = 1 MHz
;
T
j
= 25˚C
September 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BY229F, BY229X series
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
k
0.4
M
a
0.9
0.7
0.55 max
1.3
5.08
top view
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.200
嵌入式系统
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