MJD122 (NPN)
MJD127 (PNP)
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
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•
Lead Formed for Surface Mount Applications in Plastic Sleeves
•
Surface Mount Replacements for 2N6040−2N6045 Series,
•
•
•
•
•
SILICON
POWER TRANSISTOR
8 AMPERES
100 VOLTS, 20 WATTS
COLLECTOR 2,4
BASE
1
TIP120−TIP122 Series, and TIP125−TIP127 Series
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain: h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
Pb−Free Packages are Available
4
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
P
D
Value
100
100
5
8
16
120
20
0.16
1.75
0.014
−65
to +150
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
W/°C
W
W/°C
°C
1 2
3
EMITTER 3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
−
Continuous
−
Peak
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAM
AYWW
J12xG
A
Y
WW
x
G
= Assembly Location
= Year
= Work Week
= 2 or 7
= Pb−Free Package
ORDERING INFORMATION
Device
MJD122
MJD122G
MJD122T4
Package
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
Shipping
†
75 Units/Rail
75 Units/Rail
2500/Tape & Reel
2500/Tape & Reel
75 Units/Rail
75 Units/Rail
2500/Tape & Reel
2500/Tape & Reel
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Case
Thermal Resistance
Junction−to−Ambient (Note1)
Symbol
R
qJC
R
qJA
Max
6.25
71.4
Unit
°C/W
MJD122T4G
MJD127
°C/W
MJD127G
MJD127T4
MJD127T4G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
March, 2011
−
Rev. 10
1
Publication Order Number:
MJD122/D
MJD122 (NPN)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 30 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4 Adc, V
CE
= 4 Vdc)
(I
C
= 8 Adc, V
CE
= 4 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 4 Adc, I
B
= 16 mAdc)
(I
C
= 8 Adc, I
B
= 80 mAdc)
Base−Emitter Saturation Voltage (Note 2)
(I
C
= 8 Adc, I
B
= 80 mAdc)
Base−Emitter On Voltage
(I
C
= 4 Adc, V
CE
= 4 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(I
C
= 3 Adc, V
CE
= 4 Vdc, f = 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
Small−Signal Current Gain
(I
C
= 3 Adc, V
CE
= 4 Vdc, f = 1 kHz)
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
MJD127
MJD122
|h
fe
|
C
ob
−
−
h
fe
300
300
200
−
−
4
−
MHz
pF
h
FE
1000
100
V
CE(sat)
−
−
V
BE(sat)
V
BE(on)
−
−
2
4
4.5
2.8
Vdc
Vdc
12,000
−
Vdc
−
V
CEO(sus)
I
CEO
I
CBO
I
EBO
100
−
−
−
−
10
10
2
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Max
Unit
T
A
T
C
2.5 25
PD, POWER DISSIPATION (WATTS)
2 20
T
C
T
A
SURFACE
MOUNT
1.5 15
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
125
150
Figure 1. Power Derating
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MJD122 (NPN)
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127
20,000
V
CE
= 4 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10,000
7000
5000
3000
2000
25°C
1000
700
500
300
200
0.1
- 55°C
10,000
5000
3000
2000
25°C
1000
500
300
200
0.1
- 55°C
T
J
= 150°C
20,000
V
CE
= 4 V
NPN MJD122
T
J
= 150°C
0.2
0.3
0.5 0.7
1
2
3
5
7
10
0.2
0.3
0.5 0.7
1
2
3
5
7
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
2.6
I
C
= 2 A
4A
6A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
3
T
J
= 25°C
2.6
I
C
= 2 A
4A
6A
2.2
2.2
1.8
1.8
1.4
1
0.3
1.4
1
0.3
0.5 0.7
1
2
3
5
7
10
20
30
0.5 0.7
1
2
3
5
7
10
20 30
I
B
, BASE CURRENT (mA)
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
3
T
J
= 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
3
T
J
= 25°C
2.5
2
2
V
BE(sat)
@ I
C
/I
B
= 250
V
BE
@ V
CE
= 4 V
1
V
CE(sat)
@ I
C
/I
B
= 250
0.5
0.1
1.5
V
BE
@ V
CE
= 4 V
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
1.5
1
0.5
0.1
0.2 0.3
0.5 0.7
1
2
3
5
7
10
0.2 0.3
0.5 0.7
1
2
3
5
7
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
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MJD122 (NPN)
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+5
+4
+3
+2
+1
0
-1
-2
-3
-4
-5
0.1
0.2 0.3
0.5
1
2 3
I
C
, COLLECTOR CURRENT (AMP)
5
7
10
q
VB
for V
BE
q
VC
for V
CE(sat)
- 55°C to 25°C
25°C to 150°C
25°C to 150°C
*I
C
/I
B
≤
h
FE/3
+5
+4
+3
+2
+1
0
-1
-2
-3
-4
-5
0.1
q
VB
for V
BE
25°C to 150°C
- 55°C to 25°C
5
7
10
*q
VC
for V
CE(sat)
- 55°C to 25°C
*I
C
/I
B
≤
h
FE/3
25°C to 150°C
NPN MJD122
- 55°C to 25°C
0.2 0.3
0.5 0.7 1
2 3
I
C
, COLLECTOR CURRENT (AMP)
Figure 5. Temperature Coefficients
10
5
REVERSE
IC, COLLECTOR CURRENT (
μ
A)
10
4
10
3
10
2
10
1
10
0
T
J
= 150°C
100°C
25°C
- 1.2 - 1.4
V
CE
= 30 V
FORWARD
IC, COLLECTOR CURRENT (
μ
A)
10
5
REVERSE
10
4
10
3
10
2
T
J
= 150°C
10
1
10
0
100°C
V
CE
= 30 V
FORWARD
10
-1
+ 0.6 + 0.4 + 0.2
0 - 0.2 - 0.4 - 0.6 - 0.8 - 1
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
25°C
10
-1
- 0.6 - 0.4 - 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
Figure 6. Collector Cut−Off Region
10,000
hfe , SMALL-SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1
2
5
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
PNP
NPN
T
C
= 25°C
V
CE
= 4 Vdc
I
C
= 3 Adc
C, CAPACITANCE (pF)
300
T
J
= 25°C
200
C
ob
100
70
C
ib
50
PNP
NPN
0.2
0.5
1
2
5
10
20
50
100
30
0.1
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Small−Signal Current Gain
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Figure 8. Capacitance
MJD122 (NPN)
5
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
TUT
V
2
APPROX
+8 V
0
V
1
APPROX
-12 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
R
B
51
D
1
+4V
≈
8k
≈
120
V
CC
- 30 V
R
C
SCOPE
t, TIME (
μ
s)
3
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1
t
s
PNP
NPN
t
f
25
ms
FOR t
d
AND t
r
, D
1
IS DISCONNECTED
AND V
2
= 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
0.2
t
r
t
d
@ V
BE(off)
= 0 V
5
7
10
0.3
0.5 0.7 1
3
2
I
C
, COLLECTOR CURRENT (AMP)
Figure 9. Switching Times Test Circuit
Figure 10. Switching Times
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
R
qJC(t)
= r(t) R
qJC
R
qJC
= 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
0.1
0.07
0.05
0.03
0.02
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
30
50
100
200 300
500
1000
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
t, TIME OR PULSE WIDTH (ms)
20
Figure 11. Thermal Response
IC, COLLECTOR CURRENT (AMP)
20
15
10
5
3
2
1
T
J
= 150°C
1 ms
500
m
σ
100
m
σ
5 ms
0.5
0.3
0.2
0.1
0.05
0.03
0.02
BONDING WIRE LIMIT
THERMAL LIMIT
T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED V
CEO
1
2
3
5
7
10
20
30
dc
50 70 100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Maximum Forward Bias
Safe Operating rea
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