Email: info@olitech-elec.com
Website: www.olitech-elec.com
Plastic-Encapsulate Transistors
FEATURES
•
High Voltage
•
Complement to BC546,BC547,BC548
BC556/BC557/BC558
(PNP)
1. COLLECTO
2. BASE
3. EMITTER
TO-92
Maximum Ratings (
Ta=25
Symbol
unless otherwise noted)
Parameter
BC556
Value
-80
-50
-30
-65
-45
-30
-5
-0.1
625
200
150
-55~+150
V
A
mW
/W
V
V
Unit
V
CBO
Collector-Base Voltage
BC557
BC558
BC556
V
CEO
Collector-Emitter Voltage
BC557
BC558
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
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Email: info@olitech-elec.com
BC556/BC557/BC558
ELECTRICAL CHARACTERISTICS
( @ Ta=25
Parameter
BC556
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown voltage
BC556
Collector cut-off current
BC557
BC558
BC556
Collector cut-off current
BC557
BC558
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I
EBO
h
FE
*
Website: www.olitech-elec.com
Plastic-Encapsulate Transistors
unless otherwise specified)
Test
conditions
Min
-80
Typ
Max
Unit
Symbol
BC557
BC558
BC556
BC557
BC558
V
(BR)CBO
I
C
= -0.1mA,I
E
=0
-50
-30
-65
V
V
(BR)CEO
I
C
=-2mA,I
B
=0
-45
-30
V
V
(BR)EBO
I
E
=-100μA,I
C
=0
V
CB
=-70V,I
E
=0
-5
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
120
800
-0.3
-0.65
-0.8
-1
-0.55
-0.7
-0.82
6
150
V
μA
μA
μA
μA
μA
μA
μA
I
CBO
V
CB
=-45V,I
E
=0
V
CB
=-25V,I
E
=0
V
CE
=-60V,I
B
=0
I
CEO
V
CE
=-40V,I
B
=0
V
CE
=-25V,I
B
=0
V
EB
=-5V,I
C
=0
V
CE
=-5V, I
C
=-2mA
I
C
=-10mA,I
B
=-0.5mA
I
C
=-100mA,I
B
=-5mA
V
CE(sat)
V
V
V
V
V
V
pF
MHz
MHz
MHz
Base-emitter saturation voltage
V
BE(sat)
I
C
=-10mA,I
B
=-0.5mA
I
C
=-100mA,I
B
=-5mA
Base-emitter voltage
Collector output capacitance
BC556
Transition frequency
BC557
BC558
V
BE
C
ob
V
CE
=-5V, I
C
=-2mA
V
CE
=-5V, I
C
=-10mA
V
CB
=-10V,I
E
=0, f=1MHz
f
T
V
CE
=-5V,I
C
=-10mA, f=100MHz
150
150
CLASSIFICATION of h
FE
RANK
RANGE
A
110-220
B
180-460
C
420-800
OLITECH ELECTRONICS CO. LTD.
Page:P4 -P2
Email: info@olitech-elec.com
Website: www.olitech-elec.com
Plastic-Encapsulate Transistors
BC556/BC557/BC558
Typical Characteristics
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
VCE = –10 V
TA = 25°C
V, VOLTAGE (VOLTS)
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0.2
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50
IC, COLLECTOR CURRENT (mAdc)
–100 –200
0
–0.1 –0.2
VCE(sat) @ IC/IB = 10
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–50
–100
VBE(on) @ VCE = –10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
0.3
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
–2.0
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
VCE , COLLECTOR–EMITTER VOLTAGE (V)
TA = 25°C
–1.6
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–1.2
IC =
–10 mA
IC = –50 mA
IC = –20 mA
IC = –200 mA
IC = –100 mA
–0.8
–0.4
0
–0.02
–0.1
–1.0
IB, BASE CURRENT (mA)
–10 –20
–0.2
–10
–1.0
IC, COLLECTOR CURRENT (mA)
–100
Figure 3. Collector Saturation Region
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
Figure 4. Base–Emitter Temperature Coefficient
10
7.0
C, CAPACITANCE (pF)
5.0
Cob
Cib
TA = 25°C
400
300
200
150
100
80
60
40
30
20
–0.5
VCE = –10 V
TA = 25°C
3.0
2.0
1.0
–0.4 –0.6
–1.0
–2.0
–4.0 –6.0
–10
–20 –30 –40
–1.0
–2.0 –3.0
–5.0
–10
–20
–30
–50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
Page:P4 -P3
OLITECH ELECTRONICS CO. LTD.
Email: info@olitech-elec.com
Website: www.olitech-elec.com
Plastic-Encapsulate Transistors
BC556/BC557/BC558
Typical Characteristics
–1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = –5.0 V
TA = 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE @ VCE = –5.0 V
–0.4
–0.2
0.2
0
–0.2
VCE(sat) @ IC/IB = 10
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP)
–0.5
–50 –100 –200
–1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–0.1 –0.2
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
–2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
–1.0
–1.6
IC =
–10 mA
–20 mA
–50 mA
–100 mA –200 mA
–1.4
–1.2
–1.8
θ
VB for VBE
–55°C to 125°C
–0.8
–2.2
–0.4
TJ = 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
IB, BASE CURRENT (mA)
–5.0
–10
–20
–2.6
–3.0
–0.2
–0.5 –1.0
–50
–2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–100 –200
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
40
TJ = 25°C
C, CAPACITANCE (pF)
20
Cib
500
VCE = –5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
–0.1 –0.2
Cob
20
–0.5 –1.0 –2.0
–5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
–50 –100
–100
–1.0
–10
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
Page:P4 -P4
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