Die Datasheet
GB01SHT12-CAL
V
RRM
I
F
@ 25
o
C
Q
C
=
=
=
1200 V
2.5 A
6 nC
High Temperature Silicon Carbide
Power Schottky Diode
Features
1200 V Schottky rectifier
210°C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of V
F
Temperature independent switching behavior
Lowest figure of merit Q
C
/I
F
Available screened to Mil-PRF-19500
Die Size = 0.9 mm x 0.9 mm
Advantages
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at T
j
= 210 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
2
I t value
Power dissipation
Operating and storage temperature
Symbol
V
RRM
I
F
I
F
I
F(RMS)
I
F,SM
I
F,max
2
∫i dt
P
tot
T
j
, T
stg
Conditions
T
C
= 25 °C, R
thJC
= 9.52
T
C
≤ 190 °C, R
thJC
= 9.52
T
C
≤ 190 °C, R
thJC
= 9.52
T
C
= 25 °C, t
P
= 10 ms
T
C
= 25 °C, t
P
= 10 µs
T
C
= 25 °C, t
P
= 10 ms
T
C
= 25 °C, R
thJC
= 9.52
Values
1200
2.5
0.75
1.3
8
65
0.5
26
-55 to 210
Unit
V
A
A
A
A
A
2
AS
W
°C
Electrical Characteristics at T
j
= 210 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
V
F
I
R
Q
C
t
s
C
Conditions
I
F
= 0.75 A, T
j
= 25 °C
I
F
= 0.75 A, T
j
= 210 °C
V
R
= 1200 V, T
j
= 25 °C
V
R
= 1200 V, T
j
= 210 °C
V
R
= 400 V
I
F
≤ I
F,MAX
V
R
= 960 V
dI
F
/dt = 200 A/μs
V
R
= 400 V
T
j
= 210 °C
V
R
= 960 V
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 400 V, f = 1 MHz, T
j
= 25 °C
V
R
= 1000 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
1.7
2.8
1
10
6
11
< 17
66
10
8
max.
Unit
V
10
100
µA
nC
ns
pF
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Figures:
Die Datasheet
GB01SHT12-CAL
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 4: Typical Capacitive Energy vs Reverse Voltage
Characteristics
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Mechanical Parameters
Die Dimensions
Anode pad size
Die Area total / active
Die Thickness
Wafer Size
Flat Position
Die Frontside Passivation
Anode Pad Metallization
Backside Cathode Metallization
Die Attach
Wire Bond
Reject ink dot size
Recommended storage environment
Die Datasheet
GB01SHT12-CAL
0.9 x 0.9
0.64 x 0.64
0.81/0.36
360
100
0
Polyimide
4000 nm Al
400 nm Ni + 200 nm Au
Electrically conductive glue or solder
Al ≤ 350 µm
Φ ≥ 0.3 mm
Store in original container, in dry nitrogen,
< 6 months at an ambient temperature of 23 °C
µm
mm
deg
mm
2
Chip Dimensions:
DIE
METAL
WIRE
BONDABLE
A
[mm]
B
[mm]
C
[mm]
D
[mm]
E
[mm]
F
[mm]
0.9
0.9
0.64
0.64
0.6
0.6
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Date
2015/02/09
2012/04/03
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
Revision
1
0
Die Datasheet
Revision History
Comments
Inserted Mechanical Parameters
Initial release
GB01SHT12-CAL
Supersedes
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
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Die Datasheet
GB01SHT12-CAL
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GB01SHT12-CAL_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GB01SHT12-CAL.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
05-SEP-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB01SHT12-CAL SPICE Model
*
.SUBCKT GB01SHT12 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.0099); Temperature Dependant Resistor
D1 INT KATHODE GB01SHT12_25C; Call the 25C Diode Model
D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model
.MODEL GB01SHT12_25C D
+ IS
1.88E-18
RS
0.9255
+ N
1
IKF
98.29122743
+ EG
1.2
XTI
3
+ CJO
7.90E-11
VJ
0.367
+ M
1.63
FC
0.5
+ TT
1.00E-10
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
1
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB01SHT12_PIN D
+ IS
2.76E-16
RS
0.84243
+ N
3.791461
IKF
2.98675
+ EG
3.23
XTI
30
+ FC
0.5
TT
0
+ BV
1200
IBV
1.00E-03
+ VPK
1200
IAVE
1
+ TYPE
SiC_PiN
.ENDS
*
* End of GB01SHT12-CAL SPICE Model
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