CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C393V8
Issued Date : 2016.01.04
Revised Date :
Page No. : 1/9
MTN2310AV8
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Repetitive Avalanche Rated
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@ T
C
=25°C, V
GS
=10V
I
D
@ T
A
=25°C, V
GS
=10V
V
GS
=10V, I
D
=3A
R
DSON(TYP)
V
GS
=4.5V, I
D
=2A
60V
14A
6A
29mΩ
33mΩ
Equivalent Circuit
MTN2310AV8
Outline
DFN3×3
Pin 1
G：Gate
D：Drain S：Source
Ordering Information
Device
MTN2310AV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTN2310AV8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=10V, T
C
=25°C
Continuous Drain Current @ V
GS
=10V, T
C
=100°C
Continuous Drain Current @ V
GS
=10V, T
A
=25°C
Continuous Drain Current @ V
GS
=10V, T
A
=70°C
Pulsed Drain Current
Avalanche Current
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
Spec. No. : C393V8
Issued Date : 2016.01.04
Revised Date :
Page No. : 2/9
Limits
60
±20
14
9
6
4.8
30 *1
14
9.8
2
14
2.3 *2
-55~+150
Unit
V
A
Avalanche Energy @ L=0.1mH, I
D
=14A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
T
C
=25℃
T
A
=25℃
mJ
W
°C
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
ƟJC
R
ƟJA
Value
9
50
*2
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper. In practice R
th,j-a
will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
*1
Min.
60
1
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
9.5
-
-
-
29
33
1116
43
37
18.2
3.2
2.8
Max.
-
2.5
-
±
100
1
25
38
43
-
-
-
-
-
-
Unit
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=3A
V
GS
=
±
20V
V
DS
=48V, V
GS
=0V
V
DS
=48V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=2A
V
DS
=30V, V
GS
=0V, f=1MHz
Dynamic
Ciss
Coss
Crss
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
MTN2310AV8
pF
nC
V
DS
=30V, V
GS
=10V, I
D
=6A
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
-
-
-
-
Typ.
8.8
16.4
36.6
16.4
-
-
0.77
11
7
Max.
-
-
-
-
6
30
1.2
-
-
Unit
ns
Test Conditions
Spec. No. : C393V8
Issued Date : 2016.01.04
Revised Date :
Page No. : 3/9
V
DS
=30V, I
D
=1A, V
GS
=10V, R
GS
=6Ω
A
V
ns
nC
I
S
=2A, V
GS
=0V
I
F
=6A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTN2310AV8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
30
25
I
D
, Drain Current (A)
20
15
10
5
V
GS
=2V
Spec. No. : C393V8
Issued Date : 2016.01.04
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V,4V
1.2
1
0.8
0.6
0.4
V
GS
=3V
I
D
=250
μ
A,
V
GS
=0V
0
0
1
2
3
V
DS
, Drain-Source Voltage(V)
4
5
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
V
GS
=4.5V
0.8
0.6
Tj=150°C
V
GS
=10V
0.4
0.2
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
160
140
120
100
80
60
40
20
0
Drain-Source On-State Resistance vs Junction Tempearture
2.4
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
I
D
=3A
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
2
1.6
1.2
0.8
0.4
V
GS
=10V, I
D
=3A
R
DS(ON)
@Tj=25°C : 29 mΩ typ.
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN2310AV8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
Spec. No. : C393V8
Issued Date : 2016.01.04
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
0.8
0.6
0.4
I
D
=1mA
10000
Ciss
Capacitance---(pF)
1000
100
C
oss
I
D
=250
μ
A
Crss
10
0
5
10
15
20
V
DS
, Drain-Source Voltage(V)
25
30
-75 -50 -25
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
10
Gate Charge Characteristics
V
DS
=48V
V
GS
, Gate-Source Voltage(V)
10
8
V
DS
=30V
V
DS
=12V
6
1
V
DS
=5V
4
0.1
Ta=25°C
Pulsed
2
I
D
=6A
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
4
8
12
16
Qg, Total Gate Charge(nC)
20
Maximum Safe Operating Area
100
Maximum Drain Current vs Junction Temperature
7
I
D
, Maximum Drain Current(A)
R
DSON
Limited
6
5
4
3
2
1
0
T
A
=25°C, V
GS
=10V, R
θ
JA
=50°C/W
I
D
, Drain Current(A)
10
100
μ
s
1ms
1
10ms
100ms
1s
T
A
=25°C, Tj=150°C
V
GS
=10V, R
θ
JA
=50°C/W
Single Pulse
0.1
DC
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
MTN2310AV8
CYStek Product Specification
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