SMG2336N
Elektronische Bauelemente
5.3 A, 30 V, R
DS(ON)
32 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R
DS(on)
and to ensure minimal power loss and heat dissipation.
A
3
SC-59
L
3
FEATURES
Top View
1
2
C B
1
2
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
Fast switching speed.
High performance trench technology.
K
E
D
F
G
H
J
REF.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Rating
30
±12
5.3
4.1
30
1.9
1.3
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
t≦10 sec
Steady-State
Thermal Resistance Rating
Maximum Junction to Ambient
1
R
θJA
°C/W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Oct-2013 Rev. B
Page 1 of 4
SMG2336N
Elektronische Bauelemente
5.3 A, 30 V, R
DS(ON)
32 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
Min.
Static
0.4
-
-
-
5
-
-
-
-
Typ.
-
-
-
-
-
-
-
8
0.68
Max.
-
±100
1
25
-
32
64
-
-
Unit
V
nA
μA
A
mΩ
S
V
Test Condition
V
DS
=V
GS
, I
D
=250μA
V
DS
=0, V
GS
=±12V
V
DS
=24V, V
GS
=0
V
DS
=24V, V
GS
=0, T
J
=55°C
V
DS
=5V, V
GS
=4.5V
V
GS
=4.5V, I
D
=4.1A
V
GS
=2.5V, I
D
=3.3A
V
DS
=15V,
,
I
D
=4.1A
I
S
=9A, V
GS
=0
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
-
-
-
8
1.1
3.4
449
70
56
7
15
37
11
-
-
-
-
-
-
-
-
-
-
nS
pF
nC
I
D
=4.1A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V,
V
GS
=0,
f=1MHz
I
D
= 4.1A,
V
DS
=15V
V
GEN
=4.5V
R
L
=3.7Ω
R
GEN
=6Ω
Notes:
1. Pulse test：PW
≦
300 us duty cycle
≦
2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Oct-2013 Rev. B
Page 2 of 4
SMG2336N
Elektronische Bauelemente
5.3 A, 30 V, R
DS(ON)
32 m
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Oct-2013 Rev. B
Page 3 of 4
SMG2336N
Elektronische Bauelemente
5.3 A, 30 V, R
DS(ON)
32 m
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Oct-2013 Rev. B
Page 4 of 4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
