MUR6020
Ultra Fast Recovery Diodes
Dimensions TO-247AC
A
C(TAB)
C
A=Anode, C=Cathode, TAB=Cathode
A
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
MUR6020
V
RSM
V
200
V
RRM
V
200
Symbol
I
FRMS
I
FAVM
I
FRM
Test Conditions
T
VJ
=T
VJM
T
C
=85
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
98
69
800
600
650
540
580
1800
1770
1460
1410
-40...+150
150
-40...+150
Unit
A
I
FSM
T
VJ
=150
o
C
T
VJ
=45
o
C
A
It
2
T
VJ
=150 C
o
A
2
s
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
Mounting torque
o
C
150
0.8...1.2
6
W
Nm
g
MUR6020
Ultra Fast Recovery Diodes
Symbol
Test Conditions
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=25
o
C; V
R
=0.8
.
V
RRM
T
VJ
=125
o
C; V
R
=0.8
.
V
RRM
I
F
=60A; T
VJ
=150
o
C
T
VJ
=25
o
C
For power-loss calculations only
T
VJ
=T
VJM
Characteristic Values
typ.
max.
50
40
11
0.88
1.08
0.70
4.0
0.75
0.25
35
Unit
uA
uA
mA
V
V
m
K/W
I
R
V
F
V
TO
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
I
F
=1A; -di/dt=200A/us; V
R
=30V; T
VJ
=25
o
C
_
V
R
=100V; I
F
=60A; -di
F
/dt=200A/us; L<0.05uH; T
VJ
=100
o
C
35
8
50
10
ns
A
FEATURES
* International standard package
JEDEC TO-247AC
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
MUR6020
Ultra Fast Recovery Diodes
160
A
140
Q
r
I
F
120
100
80
0.4
0.6
0.8
uC
T
VJ
= 100°C
V
R
= 100V
I
RM
30
A
25
T
VJ
= 100°C
V
R
= 100V
I
F
= 35A
I
F
= 70A
I
F
=140A
T
VJ
=150°C
20
15
10
I
F
= 35A
I
F
= 70A
I
F
=140A
60
T
VJ
=100°C
40
20
0.2
5
T
VJ
=25°C
0
0.0
0.4
0.8
V
F
1.2 V
0.0
10
0
100
A/us 1000
-di
F
/dt
0
200
400
600 A/us 1000
800
-di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
70
ns
60
t
rr
50
40
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
5
V
V
FR
4
2.5
T
VJ
= 100°C
I
F
= 100A
us
2.0
t
fr
1.6
1.4
K
f
1.2
1.0
0.8
0.6
0.4
0.2
0
40
80
120 °C 160
T
VJ
T
VJ
= 100°C
V
R
= 100V
t
fr
3
V
FR
1.5
I
RM
30
20
I
F
=35A
I
F
=70A
I
F
=140A
2
1.0
Q
r
1
10
0
0
200
400
600 A/us
800
-di
F
/dt
1000
0
0
200
400
600
di
F
/dt
0.5
0.0
A/us
800
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1.0
K/W
0.8
Z
thJC
0.6
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ peak forward voltage
V
FR
and t
fr
versus di
F
/dt
0.4
0.2
0.0
0.001
0.01
0.1
1
t
s
10
Fig. 7 Transient thermal impedance junction to case
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