Cx
J.
S.IILS.U
,
line.
TELEPHONE: (973) 376-2922
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SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRF430-433/IRF830-833
MTM/MTP4N45/4N50
N-Channel Power MOSFETs,
4.5 A, 450 V/500 V
Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high voltage, high spaed
applications, such as off-line switching power supplies,
UPS, AC and DC motor controls, relay and solenoid
drivers.
TO-220AB
• V
GS
Rated at ± 20 V
• Silicon Gate for Fast Switching Speeds
• IDSS. V
D
s(on), SOA and V
QS
(ih) Specified at Elevated
Temperature
• Rugged
IRF430
IRF431
IRF432
IRF433
MTM4N45
MTM4N50
IRF830
IRF831
IRF832
IRF833
MTP4N4S
MTP4N50
Rating
IRF431/433
IRF831/833
MTM/MTP4N4S
Maximum Ratings
Symbol
V
D
ss
VDGR
Characteristic
Drain to Source Voltage
Drain to Gate Voltage
R
QS
= 20 kfl
Gate to Source Voltage
Operating Junction and
Storage Temperature
Maximum Lead Temperature
for Soldering Purposes,
1/8' From Case for 5 s
Rating
IRF430/432
IRF830/B32
MTM/MTP4N50
Unit
500
500
±20
-55 to +150
450
450
±20
-55 to +150
V
V
V
VGS
Tj, T
slfl
•c
•c
T
L
275
275
Maximum On-State Characteristics
IRF430/431
IRF830/831
R
DS(on)
IRF432/433
IRF832/833
MTM/MTP4N45
MTM/MTP4N45
Static Drain-to-Source
On Resistance
Drain Current
Continuous
Pulsed
1.5
2.0
1.5
n
A
ID
4.5
18
4.0
16
4.0
10
Maximum Thermal Characteristics
RSJC
RSJA
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
Total Power Dissipation
at T
c
- 25°C
1.67
1.67
1.67
"C/W
60
75
60
75
60
75
°c/w
PD
w
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press, However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF430-433/IRF830-833
Electrical Characteristics
(Tc = 25°C unless otherwise noted)
Symbol
Off Characteristics
V
(BR)DSS
Characteristic
Win
Max
Unit
Test Conditions
Drain Source Breakdown Voltage
1
IRF430/432/830/832
IRR31/433/831/833
Zero Gate Voltage Drain Current
500
450
250
1000
V
VGS - 0 V, b = 250 /uA
bss
UA
Vps = Rated V
DS
s, V
GS
= 0 V
VDS = 0.8 x Rated V
DSS
,
V Q S - O V, T
C
=125°C
VGS - ±20 V. V
DS
= 0 V
M
nA
less
Gate-Body Leakage Current
IRF430-433
IRF830-833
±100
±500
On Characteristics
Vosph)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistanoe
2
IRF430/431/830/831
IRF432/433/832/833
2.0
4.0
V
b = 250
|uA,
V
DS
= VGS
VQS =10 V, I
D
= 2.5 A
n
1.5
2.0
2.S
S
ftj)
ais
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
VDS = 10 V, ID = 2.5 A
Dynamic Characteristics
c
iss
GOSS
800
200
60
P
F
pF
PF
ns
ns
ns
ns
nC
V
DS
= 25 V, V
QS
- 0 V
f - 1.0 MHz
GISS
td(on)
tr
Switching Characteristics (T
C
= 25'
1
C, Figures 12. 13)
30
30
55
30
30
VQD = 225 V, ID - 2.5 A
VGS= 10 V, R
GEN
= 15 H
R
G
s = 15
fl
td(oH)
t|
°g
Symbol
VGS-
10 V, I
D
= 7.0 A
V
DS
= 180 v
Characteristic
Typ
Max
Unit
Test Conditions
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF430/431/830/831
IRF432/433/832/833
1.4
1,3
600
V
V
ns
l
s
= 4.5 A; VGS - 0 V
l
s
= 4.0 A; V
GS
- 0 V
t,,
Reverse Recovery Time
l
s
= 4.5 A; dl
s
/dt=- 100 A/jjS
Notes
1- Tj=+a5°C
to
+1EO-C
2. Pulso last Pulse width < 60 (is. Duty cycle < 1 %
MTM/MTP4N45/4N50
Electrical Characteristics
(Tc = 25°C unless otherwise noted)
Symbol
Off Characteristics
V
(BR)DSS
Characteristic
Drain Source Breakdown Voltage
1
MTM/MTP4N50
MTM/MTP4N45
Mln
Max
Unit
Test Conditions
V
VGS - 0 V, b -
5
-0
mA
500
450
loss
Zero Gate Voltage Drain Current
0.25
2.5
mA
mA
nA
V
os
= 0.85 x Rated V
DSS
,
VGS - 0 V
V
D
s - 0.85 x Rated VQSS.
V Q S ^ O V. T
C
=100°C
VGS = ± 20 V, V
DS
= 0 V
IGSS
Gate-Body Leakage Current
Gate Threshold Voltage
±500
On Characteristics
Vas(ih)
2.0
1.5
R
DS(on)
4.5
4.0
1.5
3.0
7,0
6.0
V
V
I
D
"1.0 mA, V
DS
= VGS
ID =1.0 mA, V
DS
= V
GS
,
T
C
= 100°C
V
es
= 10 V, I
0
= 2.0 A
VQS -10 V, I
D
= 2,0 V
Static Drain-Source On-Resistance
2
Drain-Source On-Voltage
2
n
V
V
VDS(on)
VQs-10 V, I
D
= 4.0 A
VGS =10 V, I
D
-4.0
A
T
C
-100«C
VDS =10 V, ID = 2.0 A
V
S (U)
9ls
Forward Transconductance
2.0
Dynamic Characteristics
Q
83
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1200
pF
PF
PF
c
oss
Qss
300
80
V
DS
= 25 V, VGS = 0 V
f=1.0 MHz
Switching Characteristics (Tc = 25°C, Figures 12, 13)
3
tdton)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
50
100
200
100
60
ns
ns
ns
ns
nC
t,
td(oll)
VDD = 25 V, I
D
= 2.0 A
VGS =10 V, RGEN-SO «
RGS = 50 S7
tf
Q
9
VGS -10 V, I
D
= 7.0 A
VDD
=180
V
Motes
1. Tj-+25'C to +150-C
2. Pulse lest Pulse width < SO ps, Duly cycle <1%
3. Switching time measurements performed on LEM TR-58 test equipment.
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