®
LY62L20488
Rev. 1.1
2048K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Description
Initial Issue
Revised
ORDERING INFORMATION
in page 11
Issue Date
Feb.24.2010
Aug.25.2010
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY62L20488
Rev. 1.1
2048K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY62L20488 is a 16,777,216-bit low power
CMOS static random access memory organized as
2,097,152 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62L20488 is well designed for very low
power system applications, and particularly well
suited for battery back-up nonvolatile memory
application.
The LY62L20488 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 55/70ns
Low power consumption:
Operating current : 45/30mA (TYP.)
Standby current : 10μA (TYP.) LL-version
4μA (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.2V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY62L20488
LY62L20488(E)
LY62L20488(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
Speed
55/70ns
55/70ns
55/70ns
Power Dissipation
Standby(I
SB1,
TYP.)
Operating(Icc,TYP.)
10µA(LL)/4µA(SL)
45/30mA
10µA(LL)/4µA(SL)
45/30mA
10µA(LL)/4µA(SL)
45/30mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 – A20
DQ0 – DQ7
DECODER
2048Kx8
MEMORY ARRAY
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
A0-A20
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62L20488
Rev. 1.1
2048K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
NC
NC
DQ0
DQ1
Vcc
Vss
DQ2
DQ3
NC
A20
WE#
A19
A18
A17
A16
A15
1
2
3
4
5
6
7
44
43
42
41
40
39
38
A5
A6
A7
OE#
CE2
A8
NC
NC
DQ7
DQ6
Vss
Vcc
DQ5
DQ4
NC
NC
A9
A10
A11
A12
A13
A14
LY62L20488
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
B
C
D
E
F
G
H
NC
NC
DQ0
OE#
NC
NC
A0
A3
A5
A1
A4
A6
A7
A2
CE#
NC
CE2
NC
DQ4
Vss DQ1 A17
Vcc DQ2
DQ3
NC
A18
NC
A20
A8
NC
A14
A12
A9
DQ5 Vcc
A16 DQ6 Vss
A15
NC
DQ7
NC
A19
A13 WE#
A10
A11
1
TSOP-II
2
3
4
TFBGA
5
6
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY62L20488
Rev. 1.1
2048K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
CE#
H
X
L
L
L
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
SB
,I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
Note: H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY62L20488
Rev. 1.1
2048K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = Min.
- 55
CE# = V
IL
and CE2 = V
IH
I
CC
I
I/O
= 0mA
- 70
Other pins at V
IL
or V
IH
Average Operating
Power supply Current
Cycle time = 1µs
CE#
≦
0.2V and CE2
≧
V
CC
-0.2V
I
CC1
I
I/O
= 0mA
other pins at 0.2V or V
CC
-0.2V
CE# = V
IH
or CE2 = V
IL
I
SB
Other pins at V
IL
or V
IH
LL
LLE
LLI
CE#
≧
V
CC
-0.2V
Standby Power
*5
SL
25
℃
Supply Current
or CE2
≦
0.2V
*5
SLE
I
SB1
Other pins at 0.2V
*5
40
℃
SLI
or V
CC
-0.2V
SL
SLE
SLI
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25
℃
5. This parameter is measured at V
CC
= 3.0V
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
TYP.
3.0
-
-
-
-
2.7
-
45
30
*4
MAX.
3.6
V
CC
+0.3
0.6
1
1
-
0.4
60
45
UNIT
V
V
V
µA
µA
V
V
mA
mA
-
8
16
mA
-
-
-
-
-
-
-
-
-
0.3
10
10
10
4
4
4
4
4
2
60
80
100
6
6
30
30
40
mA
µA
µA
µA
µA
µA
µA
µA
µA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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