low insertion loss, at zero bias, as well as low flat
leakage power with fast signal response/recovery
times. Parts are available as discrete die or
assembled into a variety of surface mount or
ceramic pill packages. See the Available Case Style
table for the specific ceramic package styles and
their availability for individual part numbers.
B
Full Area Cathode
ODS
134, 1421
1421
Dimension
A (squared)
B
C
mils
15 ±2
7 ±1*
2.6 x 5.8
mm
0.381 ±0.51
0.178 ±0.025
0.067 x 0.147
Applications
The MA4L and MADL Series of PIN limiter diodes
are designed for use in passive limiter control
circuits to protect sensitive receiver components
such as low noise amplifiers (LNA), detectors, and
mixers covering the 10 MHz to 18 GHz frequency
range.
2. For the MADL-000301-01340W, MADL-000301-13880G,
MA4L401-134 and MADL-000401-13880G, “B” dimension, is
10 ±1 mils.
Available Packages
1
Chip
Chip with
Flying
30
120
31,32
134
137
186
1088
1056
1249
1387
1388
1421
1. Package dimensions can be found on the MACOM website.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4L & MADL Series
Silicon PIN Limiter Diodes
Rev. V20
Un-Packaged Die Electrical Specifications @ T
A
= +25°C
Nominal Characteristics
Part Number
Carrier
I-Region Contact Thermal
Minimum Maximum Maximum
Minimum Maximum
Lifetime
Thickness Diameter Resistance
C
j0V
C
j0V
V
REV
V
REV
R
S 10 mA
I
FOR
= +10 mA
1 MHz
1 MHz
10 µA
10 µA
500 MHz I
REV
= -6 mA
V
R
15
20
20
20
20
30
30
30
60
60
100
200
250
V
R
35
35
35
35
35
50
50
50
75
75
—
—
—
pF
0.08
0.10
0.17
0.09
0.16
0.14
0.13
0.17
0.07
0.05
—
—
—
pF
0.18
0.20
0.24
0.19
0.23
0.21
0.20
0.24
0.15
0.17
0.15
0.20
0.30
Ohms
3
2.10
2.10
2.00
2.00
1.50
2.00
2.50
1.50
2.50
2.30
2.00
1.50
1.20
ns
3
10
10
10
10
10
20
15
15
10
10
90
200
800
µm
2
2
2
2
2
3
3
3
4
4
13
20
25
mils
1.2
1.2
2.6 x 5.8
1.2
3.0
1.4
1.5
3.0
1.5
3.0
3.5
3.0
4.5
°C/W
3
175
175
175
175
175
150
150
150
150
150
30
30
25
MA4L011-134
MA4L021-134
MADL-011021-14210G
MA4L022-134
MADL-011009-01340W
MA4L031-134
MA4L032-134
MADL-011010-01340W
MA4L062-134
MADL-011011-01340W
MA4L101-134
MADL-000301-01340W
MA4L401-134
3. Test performed with the chip bonded into a ceramic pill package,ODS-30, mounted to an infinite heat-sink. Chip only thermal resistance is
approximately 2°C/W less.
Nominal High Signal Performance
4
@ T
A
= +25°C
Incident Peak
Power for
1 dB Limiting
Part Number
Freq. = 9.4 GHz Freq. = 9.4 GHz Freq. = 9.4 GHz Peak Power = 50 W
dBm
7
8
8
8
8
10
11
11
15
15
20
23
30
dBm
30
31
31
31
31
33
34
34
38
38
45
46
52
dBm
40
41
41
41
41
43
44
44
50
50
53
59
60
ns
10
15
15
10
10
25
25
25
75
75
100
50
250
Peak Power
Watts
80
90
90
90
90
125
125
125
200
200
250
500
1000
Input Power
Watts
2
3
3
3
3
4
4
4
5
5
6
7
10
Incident Peak
Power for
10 dB Limiting
Incident Peak
Power for
15 dB Limiting
Recovery Time
3 dB
Maximum
Incident
Maximum
CW
MA4L011-134
MA4L021-134
MA4L022-134
MADL-011009-01340W
MADL-011021-14210G
MA4L031-134
MA4L032-134
MADL-011010-01340W
MA4L062-134
MADL-011011-01340W
MA4L101-134
MADL-000301-01340W
MA4L401-134
4.
High Signal Performance:
Measured in a single shunt diode (die) configuration attached directly to the gold plated RF ground of a 50 Ω,
SMA connectorized, test fixture using 2 mil thick conductive silver epoxy . Chip anode contact is thermo-compression wire bonded using a
1 mil. diameter gold wire onto a 7.2 mil thick Rogers 5880 Duroid microstrip trace. A shunt coil provides the DC return.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4L & MADL Series
Silicon PIN Limiter Diodes
Rev. V20
Absolute Maximum Ratings
5
T
A
= +25°C
Parameter
Forward Current
Operating Temperature
Storage Temperature
Junction Temperature
RF Peak & CW Incident Power
Mounting Temperature
Absolute Maximum
100 mA
-55°C to +125°C
-55°C to +150°C
+175°C
Per Performance Table
+320°C for 10 sec.
5. Exceeding any one or combination of these limits may cause permanent damage to this device.
Typical High Signal Peak Power Performance in a Single Shunt 50 Ω Circuit
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4L & MADL Series
Silicon PIN Limiter Diodes
Rev. V20
Notes for Specification and Nominal High Signal Performance Tables:
Maximum Series Resistance:
R
S
, is measured at 500 MHz in the ODS-30 package and is equivalent to the
Measured with a single shunt diode (die) attached directly to the gold plated RF housing ground with 2 mil thick
conductive silver epoxy in a 50 Ω, SMA, connectorized test fixture. Chip anode contact is thermo-compression
wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick Rogers 5880 Duroid microstrip trace. A shunt
coil provides the DC return.
Maximum CW Incident Power:
Measured in a 50 Ω, SMA, connectorized housing @ 4 GHz utilizing a TWT
amplifier and the same single diode assembly configuration as stated above.
Die Handling and Mounting Information
Handling:
All semiconductor chips should be handled with care in order to avoid damage or contamination from
particulates, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick up tools is
strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are minimized.
Die Attach:
The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1.0 µm. Die can be
mounted with a gold-tin, eutectic solder perform or conductive silver epoxy. The metal RF and D.C. ground plane
mounting surface must be free of contamination and should have a surface flatness or < ±2 mils.
Eutectic Die Attachment Using Hot Gas Die Bonder:
An 80/20, gold / tin eutectic solder perform is
recommended with a work surface temperature of 255°C and a tool tip temperature of 220°C. When the hot
gas is applied, the temperature at the tool tip should be approximately 290°C. The chip should not be
exposed to a temperatures in excess of 320°C for more than 10 seconds.
Eutectic Die Attachment Using Reflow Oven:
Refer to
Application Note M538
“Surface Mounting
Instructions”.
Epoxy Die Attachment:
A thin, controlled amount of electrically conductive silver epoxy should be applied,
approximately 1-2 mils thick to minimize ohmic and thermal resistances. A small epoxy fillet should be visible
around the outer perimeter of the chip after placement to ensure full area coverage. Cure the conductive
silver epoxy per the manufacturer’s schedule, typically 150˚C for 1 hour.
Wire Bonding:
The chip’s top contact (anode) metallization layer is comprised of Ti/Pt/Au with a final gold
thickness of 1.0 µm. Thermo-compression wedge bonding using a 0.7 or 1.0 mil diameter gold wire is
recommended. The heat stage temperature should be set to approximately 200°C with a tool tip temperature of
125˚C and a force of 18 to 40 grams. Use of ultrasonic energy is not advised but if necessary should be adjusted
to the minimum setting required to achieve a good bond. Excessive energy or force applied to the top contact will
cause the metallization to dislodge and lift off. Automatic ball bonding may also be used.
See
Application Note M541
“Bonding and Handling Procedures for Chip Diode Devices” for more detailed
handling and assembly information.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
1. 内容简介 在2015年，苹果新一代的MacBook和Apple Watch皆搭载压力触控感应技术，它被Apple称为Force Touch，用户每次按下触控板之后除了可以在萤幕看见视觉回馈，它同时能够分辨出用户点按的力度强弱来做出一系列的相关操控与应用。而本文将介绍以HY16F184内建高精密Sigma-delta 24 Bit ADC搭配Uneo Force Sensor来实现一...[详细]
MicroPython开源版块
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
