SiC413
Vishay Siliconix
microBUCK
TM
SiC413
4-A, 26-V Integrated Synchronous Buck Regulator
DESCRIPTION
The SiC413 is an integrated, dc-to-dc power conversion
solution with built-in PWM-optimized high- and low-side
N-channel MOSFETs and advanced PWM controller. The
SiC413 provides a quick and easy to use POL voltage
regulation solution for a wide range of applications. Vishay
Siliconix’s Proprietary packaging technology is used to
optimize the power stage and minimize power losses
associated with parasitic impedances and switching delays.
The co-packaged Gen III TrenchFET power MOSFET
devices deliver higher efficiency than lateral DMOS
monolithic solutions.
FEATURES
• Integrated PWM controller and Gen III
trench MOSFETs
• Quick and easy single chip converter
• Integrated current sense
• Cycle by cycle over-current protection
• Built-In bootstrap diode
• Output over-voltage protection
• Under voltage lockout
• Thermal shutdown
• Soft start
• Break-before-make operation
• Halogen-free according to IEC 61249-2-21 definition
•
Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
Input Voltage Range
Output Voltage Range
Operating Frequency
Continuous Output Current
Peak Efficiency
Highside/Lowside R
DS_ON
Package
4.75 V to 26 V
0.6 V to 13.2 V
500 kHz
4A
93 %
35 mΩ/19 mΩ
SO-8
APPLICATIONS
•
•
•
•
•
•
LCD TV, set top box and DVD player
Desktop PC and server
Add-in graphics board
Memory, FPGA or µP device power supplies
Point of load dc-to-dc conversion
Telecom and networking equipment
TYPICAL APPLICATION
V
IN
V
REG
7
V
IN
6
Enable
EN
2
3
BOOT
COMP 1
Controller
4
V
SW
V
O
FB
8
SiC413
5
GND
Figure 1 - Typical Application Circuit
Document Number: 69057
S09-2250-Rev. D, 26-Oct-09
www.vishay.com
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SiC413
Vishay Siliconix
PIN CONFIGURATION
COMP
EN
BOOT
V
SW
1
2
3
4
8
7
6
5
FB
V
REG
V
IN
GND
Figure 2. SO-8 Pin Out - Top View
PIN DESCRIPTION
Pin Number
1
2
3
4
5
6
7
8
Symbol
COMP
EN
BOOT
V
SW
GND
V
IN
V
REG
FB
Description
Error amplifier output. Connects to the compensation network.
Chip enable pin. Active HIGH. Connects to a power source through a 10K to100K resistor to enable.
Connect to 0.1 µF capacitor from V
SW
to BOOT to power the high side gate driver.
Inductor Connection. Connect an output filter inductor to this pin. V
SW
is high impedance when the IC is
in shutdown mode.
GROUND pin.
Supply voltage.
Internal regulator output. An external 4.7 µF decoupling capacitor is required at this pin.
Output voltage feedback input.
ORDERING INFORMATION
Part Number
SiC413CB-T1-E3
SiC413DB
Package
SO-8 (6.2 x 5 x 1.75 mm)
Reference board
FUNCTIONAL BLOCK DIAGRAM
V
REG
V
IN
UVLO
5.5
V
REG
EN
Shutdown
control
OTP
OVP
PWM
GM
Over
current
Control logic
and active
dead time
V
SW
V
REG
BOOT
F
OSC
GND
FB
COMP
Figure 3. Functional Block Diagram
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Document Number: 69057
S09-2250-Rev. D, 26-Oct-09
SiC413
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
a
Parameter
Input Breakdown Voltage
Common Switch Node Breakdown Voltage
Logic Inputs
Bootstrap Voltage
Maximum Power Dissipation
Operating Temperature
Storage Junction Temperature
Soldering Peak Temperature
Notes:
a. T
A
= 25 °C and all voltages referenced to GND unless otherwise noted.
Symbol
V
IN
V
SW
DC
V
SW
Peak
c
V
COMP
, V
FB
, V
EN
V
BOOT
P
D
T
j
T
stg
- 25
- 40
Min.
- 0.3
-1
-1
- 0.3
- 0.3
Max.
28
28
30
6
33
1.5
125
150
260
°C
W
V
Unit
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
b
Parameter
Input Voltage
Logic Inputs
Common Switch Node
Symbol
V
IN
V
COMP
,
V
FB
, V
EN
V
SW DC
V
SW peakc
Min.
4.75
4.5
- 0.3
- 0.3
Typ.
12
5
12
24
Max.
26
5.5
26
28
V
Unit
Notes:
b. Recommended operating conditions are specified over the entire temperature range, and all voltages referenced to GND unless otherwise
noted.
c. Peak value is specified for pulses
≤
100 ns.
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Case Resistance
In Operation, Max. Junction
Junction-to-Ambient Resistance
PCB = Copper 25 mm x 25 mm
Case Top to Board Edge
PCB = EVBSiC413 Rev. 3.0; No Forced Airflow
Symbol
R
thJC
R
thJA
R
thCA
Contact Vishay for
thermal design
assistance
°C/W
Typ.
Unit
Document Number: 69057
S09-2250-Rev. D, 26-Oct-09
www.vishay.com
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SiC413
Vishay Siliconix
SPECIFICATIONS
Conditions Unless Specified
Otherwise
V
IN
= 12 V, V
EN
= 5 V,
V
OUT
= 3.3 V, T
A
= 25 °C
Air flow = 0
5
0
≤
I
O
≤
4 A
I
OUT
= 0
V
FB
R
DS(ON)HS
R
DS(ON)LS
F
OSC
DC
T
A
= 25 °C
T
A
= - 25 °C to 85 °C
V
BOOT
- V
SW
= 5.5 V
V
REG
= 5.5 V
435
62
0.591
0.582
0.6
0.6
35
19
500
70
110
2.5
1.5
I
FB
2
30
V
EN H
V
EN L
V
EN
rising
V
EN
falling
V
FB
rising and when V
FB
/V
REF
is greater
than
V
FB
falling and when V
FB
/V
REF
is less
than
V
IN
rising
V
IN
falling
3.55
1.8
0.6
565
Parameter
Converter Operation
Output Current
a
Internal Regulated Voltage
Load Regulation
a
Line Regulation
a
Feedback Voltage
MOSFET On Resistance
Internal Oscillator Frequency
Max. PWM Duty Cycle
Error Amplifier
Open Loop Voltage Gain
Unity Gain Bandwidth
Transconductance
Input Bias Current
Max. Sink/Source Current
Enable
Enable Logic Level High
Enable Logic Level Low
Protection
Overvoltage Trip Point
Overvoltage Trip Hysteresis
V
IN
Undervoltage Lockout
V
IN
Undervoltage Lockout Hysteresis
Thermal Shutdown
Thermal Shutdown Hysteresis
Peak Current Limit
Soft Start
Soft Start Period
Supply Current
Input Current
Shutdown Current
Dynamic
b
Rise Time
Fall Time
Symbol
I
OUT
V
REG
Min.
Typ.
a
4
5.7
Max.
Unit
A
6.1
0.6
0.1
0.609
0.618
V
%
%/V
V
mΩ
kHz
%
dB
MHz
mS
nA
µA
V
OVP
OVP
HYS
V
IN UVLO-h
V
IN UVLO HS
T
J SD
T
J SD HS
I
LIM
T
SS
I
Q
I
SD
T
r_SW
T
f_SW
115
120
110
3.8
200
165
20
7
5
125
%
4.05
V
mV
°C
A
ms
mA
µA
V
EN
= high and no load
V
EN
= 0 V
10 % to 90 % of SW
90 % to 10 % of SW
10
8
16
15
ns
Notes:
a. Guaranteed by design and not 100 % production tested.
b. Pulse test; pulse width
≤
300 ms, duty cycle
≤
2 %.
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Document Number: 69057
S09-2250-Rev. D, 26-Oct-09
SiC413
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
16
14
12
10
I
SD
(µA)
77
V
IN
= 12
V
76
Maximum Duty Cycle (%)
V
IN
= 12
V
75
74
73
72
71
70
- 25 - 10
8
6
4
2
0
- 25 - 10
5
20
35
50
65
80
95
110 125
5
20
35
50
65
80
95
110 125
Temperature (°C)
Temperature (°C)
Shut Down Current vs. Temperature
6.0
5.8
5.6
5.4
5.2
5.0
4.8
4.6
4.4
- 25 - 10
V
IN
= 4.75
V
V
IN
= 12V/24
V
Switching Frequency (kHz)
Maximum Duty Cycle vs. Temperature
530
V
IN
= 12
V
520
510
V
REG
(V)
500
490
480
5
20
35
50
65
80
95
110 125
470
- 25 - 10
5
20
35
50
65
80
95
110 125
Temperature (°C)
Temperature (°C)
Internal Regulator Voltage vs. Temperature
Frequency vs. Temperature
1.010
V
IN
= 12
V
1.005
V
FB
(Normalized)
I
LIM
(Normalized)
1.3
1.2
1.1
1
0.9
0.8
0.7
1.000
0.995
0.990
- 25 - 10
5
20
35
50
65
80
95
110 125
0.6
- 25 - 10
5
20
Temperature (°C)
35 50 65
80
Temperature (°C)
95
110 125
Feedback Voltage vs. Temperature (Normalized)
Document Number: 69057
S09-2250-Rev. D, 26-Oct-09
Peak Current Limit vs. Temperature (Normalized)
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