Equivalent circuit
SAH02
Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode
2
4
1
3
Application :
Chopper Regulator
(Ta=25°C)
SAH02
–10
max
–10
max
–30
min
100
min
150
min
–0.3
max
100
typ
45
typ
30 min
0.55 max
15 typ
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
SAH02
–30
–30
–10
–3
–0.5
800(Ta=25°C)
125
–40 to +125
Unit
V
V
V
A
A
mW
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE1
h
FE2
V
CE
(sat)
f
T
C
OB
V
R
V
F
trr
External Dimensions
PS Pack
2.54
±0.25
Conditions
V
CB
=–30V
V
EB
=–10V
I
C
=–10mA
V
CE
=–2V, I
C
=–1A
V
CE
=–2V, I
C
=–0.5A
I
C
=–0.5A, I
B
=–20mA
V
CE
=–12V, I
E
=0.3A
V
CB
=–10V, f=1MHz
I
R
=100
µ
A
I
F
=0.5A
I
F
=±100mA
Unit
µ
A
V
4
0.75
+0.15
-0.05
a
b
1
4.32
±0.2
µ
A
3
2
4.8
max
0.89
±0.15
1.4
±0.2
6.8
max
3.6
±0.2
4.0
max
V
MHz
0.25
8.0
±0.5
6.3
±0.2
0.3
+0.15
-0.05
0~0.1
1.0
±0.3
3.0
±0.2
9.8
±0.3
pF
V
V
ns
Weight : Approx 0.23g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
–3
–100mA
–20mA
Dio de I
F
– V
F
Characteristics
3
I
C
– V
B E
Temperature Characteristics
(Typical)
–3
( V
C E
= – 2V )
–15mA
C o l l e c t o r Cu r r e n t I
C
( A)
–2
–5 mA
F o r w a r d C u r r e n t I
F
( A)
–10mA
2
C o l l e c t o r C u r r en t I
C
( A)
–2
–5 mA
p)
mp)
e Te
–1
I
B
=–3m A
1
–1
˚C (
Cas
e
25
0
0
–1
–2
–3
–4
–5
–6
0
–3
12
0
0. 5
F or w a r d Vo lt a ge V
F
( V)
1.0
0
0
– 0 .5
–30˚C
0˚
125
5˚
˚C
C
C
25˚C
(Case
(Cas
Temp
Tem
–1.0
)
–1 . 5
Col l e ct or - Em it t er Vo l t ag e V
C E
(V )
Ba s e- E m i t t or V o l t a ge V
BE
( V )
t
on
•t
st g
• t
f
– I
C
Characteristics
(Typical)
1.0
S wi tc h i n g T i m e
t
on•
t
stg•
t
f
(
µ
s )
V
C C
12 V
–I
B 1
= I
B2
=3 0m A
0.8
t
s tg
0.6
t
on
h
FE
– I
C
Temperature Characteristics
(Typical)
( V
C E
= – 2V)
1000
D C C u r r e n t G ai n h
F E
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
30 0
10 0
θ
j - a
– t Characteristics
1 25 ˚ C
500
2 5˚ C
– 3 0˚ C
10
0.4
0.2
0
–0.1
t
f
1
0.3
0. 0 0 1
– 0. 5
C ol l ec t or C ur r ent I
C
( A)
–1
–3
100
–0.01
– 0. 0 5
–0 .1
– 0 .5
–1
–3
0. 0 1
0. 1
1
Time t(ms)
10
100
1000
C o ll e ct o r C u r r e nt I
C
( A)
V
CE
(sat) – I
B
Temperature Characteristics
(Typical)
Co lle cto r- E mi tter S a t u r a t i o n V o l t a g e V
CE( sat)
( V )
–1.5
(I
C
=– 0.5 A)
–5
Safe Operating Area
(Single Pulse)
1.0
100µs
Pc – Ta Derating
–30˚C
25˚C
C olle c to r C u r r e n t I
C
( A )
–1.0
–1
– 0 .5
10
m
1m
s
s
125˚C
Ma x imu m P ow e r D i s s i p a t i o n P
C
( W )
0.5
–0.5
– 0 .1
Without Heatsink
Natural Cooling
–0.05
0
–1
–0.03
–3
Gl a s s e p ox y s u b s t r a t e
( 9 5 x 6 9 x 1 .2 m m )
N a t ur a l C o o l i ng
0
0
25
50
75
100
125
–5
–10
–50
–100
–300
–5
– 10
–50
Base C ur r en t I
B
(mA )
Col l ec t or - Em i tt e r V ol t ag e V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( ˚ C )
162
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