HRS105N15H
Jan 2016
HRS105N15H
150V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
Lead free, Halogen Free
Key Parameters
Parameter
BV
DSS
I
D
R
DS(on), typ
Value
150
120
8.8
Unit
V
A
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
Power Tools
UPS & Motor Control
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
P
D
T
J
, T
STG
T
J
=25
unless otherwise specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25
Drain Current
T
C
= 100
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
L=0.4mH
T
C
= 25
Value
150
20
120 *
85 *
400 *
845
40
-55 to +175
Units
V
V
A
A
A
mJ
W
Operating and Storage Temperature Range
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R
R
JC
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.7
62.5
Units
/W
/W
JA
HRS105N15H
Electrical Characteristics
T
J
=25
Symbol
Parameter
C unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
V
GS
= 10 V, I
D
= 20 A
V
DS
= 5 V, I
D
= 20 A
2.0
--
--
--
8.8
43
4.0
10.5
--
V
m
S
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= 250
V
DS
= 150 V, V
GS
= 0 V
V
DS
= 150 V, T
J
= 100
V
GS
=
20 V, V
DS
= 0 V
150
--
--
--
--
--
--
--
--
1
100
100
V
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 0 V, V
DS
= 0 V, f = 1MHz
V
DS
= 75 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
4770
340
92
0.7
--
--
--
--
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 75 V, I
D
= 20 A,
V
GS
= 10 V
V
DS
= 75 V, I
D
= 20 A,
R
G
= 10
--
--
--
--
--
--
--
17
56
30
28
66
11
24
--
--
--
--
--
--
--
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 20 A, V
GS
= 0 V
I
S
= 20 A, V
GS
= 0 V
di
F
/dt = 100 A/
--
--
--
--
--
--
--
--
120
380
120
A
400
1.2
--
--
nC
V
HRS105N15H
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
10
8
V
GS
(V)
6
4
2
V
DS
= 75V
I
D
= 20V
0
0
10
20
30
40
50
60
70
Q
G
(nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
HRS105N15H
Typical Characteristics
(continued)
1.2
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.0
1.1
1.5
1.0
1.0
0.9
V
GS
= 0 V
I
D
= 250 A
0.5
V
GS
= 10 V
I
D
= 20 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
120
Figure 8. On-Resistance Variation
vs Temperature
1000
Operation in This Area
is Limited by R
DS(on)
100
100
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10 s
100 s
80
10
1 ms
DC
10 ms
100 ms
* Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
60
1
40
0.1
20
0.01
0.01
0.1
1
10
100
0
25
50
75
100
125
o
150
175
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
Z
JC
(t), Thermal Response
10
0
0.2
0.1
0.05
* Notes :
1. Z
JC
(t) = 3.7
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
10
-1
0.02
0.01
single pulse
P
DM
t
1
10
-2
10
-1
t
2
10
1
10
-2
10
-5
10
-4
10
-3
10
0
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
HRS105N15H
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
as DUT
12V
200nF
300nF
V
GS
Q
g
10V
V
GS
V
DS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
BV
DSS
I
AS
1
E
AS
= ---- L
L
I
AS2
2
I
D
(t)
10V
DUT
V
DD
t
p
V
DS
(t)
Time
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
