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HN1D01FE_14

产品描述TOSHIBA Diode Silicon Epitaxial Planar Type
文件大小236KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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HN1D01FE_14概述

TOSHIBA Diode Silicon Epitaxial Planar Type

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HN1D01FE
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01FE
Ultra High Speed Switching Application
HN1D02FU is composed of 2 unit of cathode common.
Low forward voltage
Small total capacitance
: V
F (3)
= 0.92V (typ.)
: C
T
= 2.2pF (typ.)
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
Unit in mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
300*
100*
2*
100**
150
−55
to 150
Unit
V
V
mA
mA
A
mW
°C
°C
1.
2.
3.
4.
5.
6.
CATHODE
CATHODE
ANODE
CATHODE
CATHODE
ANODE
Note: Using continuously under heavy loads (e.g. the application of high
1-2X1A
temperature/current/voltage and the significant change in
TOSHIBA
temperature, etc.) may cause this product to decrease in the
Weight: 0.003g (typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4).
Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode
are 75% of those for a single diode.
** : Total rating.
JEDEC
JEITA
Electrical Characteristics
(Q1, Q2, Q3, Q4 Common; Ta
=
25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA (fig.1)
Min
Typ.
0.61
0.74
0.92
2.2
1.6
Max
1.20
0.1
0.5
μA
pF
ns
V
Unit
Start of commercial production
2002-04
1
2014-03-01

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