DATA SHEET
SEMICONDUCTOR
1N4148M
AXIAL LEAD
DO34
500 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
Absolute Maximum Ratings
Symbol
P
D
T
STG
T
J
W
IV
I
O
I
FM
I
FSURGE
Power Dissipation
Storage Temperature Range
Operating Junction Temperature
Working Inverse Voltage
Average Rectified Current
Non-repetitive Peak Forward Current
Peak Forward Surge Current
T
A
= 25°C unless otherwise noted
Value
500
-65 to +200
+175
75
150
450
2
Units
mW
°C
°C
V
mA
mA
A
Cathode
DEVICE MARKING DIAGRAM
(1N4148M)
Parameter
Device Code : 1NxxxxM
These ratings are limiting values above which the serviceability of the diode may be impaired.
Anode
Specification Features:
Fast Switching Device (T
RR
<4.0 nS)
DO-34 Package (JEDEC DO-204)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
B
V
Breakdown Voltage
T
A
= 25°C unless otherwise noted
Parameter
Test Condition
I
R
=100µA
I
R
=5µA
Limits
Min
100
Volts
75
25
5
nA
µA
Max
Unit
I
R
Reverse Leakage Current
V
R
=20V
V
R
=75V
V
F
Forward Voltage
xxxx
TC1N4148M,
1N4148M
I
F
=10mA
1.0
Volts
T
RR
Reverse Recovery Time
I
F
=I
R
=10mA
R
L
=100Ω
I
RR
=1mA
4
nS
C
Capacitance
V
R
=0V, f=1M
HZ
4
pF
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REV.02 20120305
DEVICE CHARACTERISTICS
1N4148M
300
PD-Power Passipation [mW]
f = 1MHz
Ta = 25
℃
4.0
Total Capacitance [pF]
0
0
25
125
100
75
50
Tem perature [
℃
]
150
175
0.0
0
5
10
15
20
25
30
VR - Reverse Voltage [V]
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
160
60
IR - Leakage Current [nA]
BV - Reverse Voltage [V]
Ta=25
℃
150
140
50
40
30
20
10
0
Ta=25
℃
130
120
110
1
10
100
IR - Reverse Current [uA]
10
VR - Reverse Voltage [V]
100
Figure 3. Reverse Voltage vs Reverse Current
BV – 1.0uA to 100uA
Figure 4. Reverse Current vs Reverse Voltage
IR – 10V to 100V
1500
1400
Ta=25
℃
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0.001
1000
VF - Forward Voltage [mV]
VF - Forward Voltage (mV)
800
Ta= -40
℃
Ta=25
℃
400
Ta=65
℃
Ta=125
℃
200
600
0.100
10.000
IF - Forw ard Current [mA]
1000.000
0
0.01
10
1
0.1
IF - Forw ard Current (m A)
100
Figure 5. Forward Voltage vs Forward Current
VF – 0.001mA to 800mA
Figure 6. Forward Voltage vs Ambient Temperature
VF – 0.01mA to 100mA (-40 to +125 Deg C)
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REV.02 20120305