DS1258AB-100: 产品描述128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DMA40; 产品类别存储存储; 文件大小172KB，共8页; 制造商DALLAS; 官网地址http://www.dalsemi.com

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DS1258AB-100概述

128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DMA40

DS1258AB-100规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	DALLAS
包装说明	0.740 INCH, EXTENDED MODULE, DIP-40
Reach Compliance Code	unknow
最长访问时间	100 ns
其他特性	DATA RETENTION > 10 YEARS
JESD-30 代码	R-XDIP-T40
JESD-609代码	e0
内存密度	2097152 bi
内存集成电路类型	NON-VOLATILE SRAM MODULE
内存宽度	16
功能数量	1
端口数量	1
端子数量	40
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	128KX16
输出特性	3-STATE
可输出	YES
封装主体材料	UNSPECIFIED
封装代码	DIP
封装等效代码	DIP40,.6
封装形状	RECTANGULAR
封装形式	IN-LINE
并行/串行	PARALLEL
电源	5 V
认证状态	Not Qualified
最大待机电流	0.01 A
最大压摆率	0.17 mA
最大供电电压 (Vsup)	5.25 V
最小供电电压 (Vsup)	4.75 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL

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DS1258Y/AB

128k x 16 Nonvolatile SRAM

www.maxim-ic.com

FEATURES

10-Year Minimum Data Retention in the

Absence of External Power

Data is Automatically Protected During a

Power Loss

Separate Upper Byte and Lower Byte Chip-

Select Inputs

Unlimited Write Cycles

Low-Power CMOS

Read and Write Access Times as Fast as 70ns

Lithium Energy Source is Electrically

Disconnected to Retain Freshness Until

Power is Applied for the First Time

Full

±10%

Operating Range (DS1258Y)

Optional

±5%

Operating Range (DS1258AB)

Optional Industrial Temperature Range of

-40°C to +85°C, Designated IND

PIN ASSIGNMENT

CEU

CEL

DQ15

DQ14

DQ13

DQ12

DQ11

DQ10

DQ9

DQ8

GND

DQ7

DQ6

DQ5

DQ4

DQ3

DQ2

DQ1

DQ0

A16

A15

A14

A13

A12

A11

A10

GND

40-Pin Encapsulated Package

740mil Extended

PIN DESCRIPTION

A0 to A16

DQ0 to DQ15

CEU

CEL

GND

- Address Inputs

- Data In/Data Out

- Chip Enable Upper Byte

- Chip Enable Lower Byte

- Write Enable

- Output Enable

- Power (+5V)

- Ground

DESCRIPTION

The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as

131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control

circuitry that constantly monitors V

for an out-of-tolerance condition. When such a condition occurs,

the lithium energy source is automatically switched on and write protection is unconditionally enabled to

prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV

128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write

cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

1 of 8

033104

DS1258AB-100相似产品对比

	DS1258AB-100	DS1258AB-100-IND	DS1258AB-70	DS1258AB-70-IND	DS1258Y	DS1258Y-100-IND	DS1258Y-70	DS1258Y-70-IND
描述	128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DMA40	128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, PDIP40	128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, DMA40	128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DMA40	128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, PDIP40	128k x 16 Nonvolatile SRAM	128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, DIP40	Safety Sign; Legend:Notice Authorized Personnel Only; External Height:7"; External Width:10"; Body Material:Polyester; Color:Blue/Black RoHS Compliant: NA
是否Rohs认证	不符合	不符合	不符合	不符合	-	不符合	不符合	不符合
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
最长访问时间	100 ns	100 ns	70 ns	70 ns	70 ns	100 ns	70 ns	70 ns
其他特性	DATA RETENTION > 10 YEARS	-	DATA RETENTION > 10 YEARS	DATA RETENTION > 10 YEARS	10 YEARS OF DATA RETENTION PERIOD	-	DATA RETENTION > 10 YEARS	DATA RETENTION > 10 YEARS
JESD-30 代码	R-XDIP-T40	R-PDIP-T40	R-XDIP-T40	R-PDIP-T40	R-PDIP-T40	R-PDIP-T40	R-XDIP-T40	R-PDIP-T40
JESD-609代码	e0	e0	e0	e0	-	e0	e0	e0
内存密度	2097152 bi	2097152 bi	2097152 bi	2097152 bi	2097152 bi	2097152 bi	2097152 bi	2097152 bi
内存集成电路类型	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE
内存宽度	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	-	1	1	1
端子数量	40	40	40	40	40	40	40	40
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C
组织	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	-	YES	YES	YES
封装主体材料	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	UNSPECIFIED	PLASTIC/EPOXY
封装代码	DIP	DIP	DIP	DIP	-	DIP	DIP	DIP
封装等效代码	DIP40,.6	DIP40,.6	DIP40,.6	DIP40,.6	-	DIP40,.6	DIP40,.6	DIP40,.6
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	5 V	5 V	5 V	5 V	-	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.01 A	0.01 A	0.01 A	0.01 A	-	0.01 A	0.01 A	0.01 A
最大压摆率	0.17 mA	0.17 mA	0.17 mA	0.17 mA	-	0.17 mA	0.17 mA	0.17 mA
最大供电电压 (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子节距	2.54 mm	2.54 mm	2.54 mm	2.54 mm	-	2.54 mm	2.54 mm	2.54 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

DS1258AB-100

DS1258AB-100在线购买

DS1258AB-100概述

DS1258AB-100规格参数

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DS1258AB-100相似产品对比

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