10-RZ126PA025SC-M629F41
10-R0126PA025SC-M629F40
flow
90PACK 0
Features
●
90° PCB mounting for easy heat sink assembly
●
Clip-in PCB mounting (optional)
●
Open emitter for easy current sensing
1200V/25A
flow
90PACK 0
without clips
Target Applications
●
Standard Drive
●
Servo Drive
●
Bookshelf Inverter
with clips
Schematic
Types
●
10-RZ126PA025SC-M629F41
●
10-R0126PA025SC-M629F40
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current *
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT *
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
* measured with phase-change material
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE
≤
1200V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
1200
29
38
75
50
81
123
±20
10
800
175
V
A
A
A
W
V
µs
V
°
C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current *
Repetitive peak forward current
Power dissipation per Diode *
Maximum Junction Temperature
* measured with phase-change material
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
32
42
50
63
96
175
V
A
A
W
°
C
Copyright by Vincotech
1
Revision: 2
10-RZ126PA025SC-M629F41
10-R0126PA025SC-M629F40
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 10,93
>200
V
mm
mm
Copyright by Vincotech
2
Revision: 2
10-RZ126PA025SC-M629F41
10-R0126PA025SC-M629F40
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Phase-Change
Material
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
960
40
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=16
Rgon=16
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
V
CE
=V
GE
15
0
20
1200
0
0,00085
25
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
5
1,5
5,8
1,96
2,28
6,5
2,4
0,01
200
V
V
mA
nA
none
66
67
42
43
196
264
71
138
2,13
3,15
1,47
2,48
ns
±15
600
25
mWs
1430
115
85
120
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,17
K/W
Thermal resistance chip to heatsink per chip
R
thJH
1,38
K/W
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
25
Rgon=16
±15
600
25
Erec
Phase-Change
Material
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
1,2
1,90
1,83
13
17
318
524
2,22
4,50
115
92
0,86
1,78
2,4
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
1,51
K/W
Thermal resistance chip to heatsink per chip
R
thJH
1,77
K/W
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
R
∆R/R
P
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
-5
200
2
3500
3560
G
4700
5
%
mW
mW/K
K
K
Copyright by Vincotech
3
Revision: 2
10-RZ126PA025SC-M629F41
10-R0126PA025SC-M629F40
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
80
I
C
(A)
I
C
(A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
80
Output inverter IGBT
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
µs
250
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
25
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
100
I
F
(A)
Output inverter FWD
20
80
15
60
10
40
5
20
T
j
= T
jmax
-25°
C
T
j
= 25°
C
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
T
j
= T
jmax
-25°
C
T
j
= 25°
C
1
2
3
V
F
(V)
4
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
Copyright by Vincotech
4
Revision: 2
10-RZ126PA025SC-M629F41
10-R0126PA025SC-M629F40
Output Inverter
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
10
E (mWs)
Output inverter IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
E (mWs)
6
Output inverter IGBT
E
on High T
5
E
on High T
8
4
6
E
on Low T
E
on Low T
3
E
off High T
4
E
off High T
2
E
off Low T
2
1
E
off Low T
0
0
10
20
30
40
I
C
(A)
50
0
0
15
30
45
60
R
G
(
Ω
)
75
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
16
R
goff
=
16
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
25
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
2,5
E (mWs)
Output inverter FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
2,5
E (mWs)
Output inverter FWD
E
rec
2,0
2,0
T
j
= T
jmax
-25°
C
1,5
1,5
T
j
= T
jmax
-25°
C
E
rec
T
j
= 25°
C
1,0
E
rec
1,0
T
j
= 25°
C
E
rec
0,5
0,5
0,0
0
10
20
30
40
I
C
(A)
50
0,0
0
15
30
45
60
R
G
(
Ω
)
75
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
16
With an inductive load at
T
j
=
25/150
°C
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
25
A
Copyright by Vincotech
5
Revision: 2
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