SEOA THRU SEOM
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Forward Current -
1.5 Amperes
Features
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Ultrafast recovery times for high efficiency
Plastic package has Underwriters Laboratory
Flammability classification 94V-0
High temperature soldering:
260 /10 seconds at terminals
Mechanical Data
Case:
SMA, molded plastic
Terminals:
Solder plated solderable per
MIL-STD-750, method 2026
Polarity:
Indicated by cathode band
Weight:
0.004 ounce, 0.11 gram
D IM E N S IO N S
D IM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
in c h e s
M in .
0 .2 1 6
0 .1 7 6
0 .0 9 4
0 .1 7 0
0 .0 3 9
0 .0 8 0
0 .0 6 8
0 .1 1 2
0 .0 5 7
-
0 .0 1 6
0 .1 0 9
0 .1 0 5
0 .0 7 8
M a x .
0 .2 2 6
0 .1 8 2
0 .1 0 0
0 .1 7 6
0 .0 5 5
0 .0 8 1
0 .0 8 3
0 .1 1 8
-
0 .0 1 8
-
0 .1 1 5
0 .1 0 7
0 .0 8 1
M in .
5 .4 8
4 .4 8
2 .4 0
4 .3 3
1 .0 0
2 .0 3
1 .7 2
2 .8 5
1 .4 4
-
0 .4 0
2 .7 7
2 .6 7
2 .0 0
m m
M a x .
5 .7 4
4 .6 3
2 .5 5
4 .4 8
1 .4 0
2 .0 7
2 .1 0
3 .0 0
-
0 .4 5
-
2 .9 3
2 .7 3
2 .0 5
N o te
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
SEOA
SEOB
SEOD
SEOE
SEOG
SEOJ
SEOK
SEOM
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current,
at T
L
=90
Peak forward surge current,
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method) T
A
=55
Maximum instantaneous forward voltage at 1.5A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=100
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
rr
C
J
R
JL
50
35
50
100
70
100
200
140
200
300
210
300
1.5
50.0
400
280
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
1.00
1.40
10.0
500.0
50
50.0
20.0
-50 to +150
1.70
Volts
A
Maximum Reverse recovery time (Note 1) T
J
=25
Typical junction capacitance (Note 2)
Maximum thermal resistance (Note 3)
Operating and storage temperature range
Notes:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) 8.0mm
2
(0.013mm thick) land areas
100
nS
F
/W
T
J
, T
STG
1
微控制器 MCU
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