Operating Temperature Range .......................... -40NC to +85NC
Maximum Junction Temperature.....................................+150NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) .....................................+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN-EP
Junction-to-Ambient Thermal Resistance (q
JA
) ...........41°C/W
Junction-to-Case Thermal Resistance (q
JC
)..................8°C/W
TSSOP
Junction-to-Ambient Thermal Resistance (q
JA
) ......100.4°C/W
Junction-to-Case Thermal Resistance (q
JC
)................30°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
CC
= +1.65V to +5.5V, V
L
= 0.9V to the lesser of V
CC
+ 0.3V and 5V. T
A
= T
J
= -40NC to +85NC, unless otherwise noted. Typical
values are at V
CC
= +3.3V, V
L
= +1.8V, T
A
= +25NC, unless otherwise noted.) (Notes 2, 3)
PARAMETER
POWER SUPPLIES
V
L
Supply Range
V
CC
Supply Range
V
L
Supply Current
V
CC
Supply Current
V
CC
Shutdown Mode Supply
Current
V
L
Shutdown Mode Supply
Current
I/OVCC_, I/OVL_,
TS
Leakage
Current
TS
Input Leakage Current
V
L
Shutdown Threshold
V
CC
Shutdown Threshold
I/OVL_ Pullup Resistor
I/OVCC_ Pullup Resistor
V
L
V
CC
I
VL
I
VCC
I
SHDN_VCC
I/OVCC_ = V
CC
, I/OVL_ = V
L
,
TS
= V
L
I/OVCC_ = V
CC
, I/OVL_ = V
L
,
TS
= V
L
TS
= GND, I/OVCC = unconnected
TS
= V
CC
, V
L
= GND,
I/OVCC = unconnected
TS
= GND
I
SHDN_VL
I
LEAK
I
LEAK_TS
V
TH_VL
V
TH_VCC
R
VL_PU
R
VCC_PU
TS
= V
L
, V
CC
= GND,
I/OVL_ = unconnected
T
A
= +25NC,
TS
= GND
T
A
= +25NC
0.3
0.8
10
10
0.1
0.1
0.1
0.1
0.1
0.9
1.65
5
5.5
1
35
1
1
1
1
1
1
0.85
1.35
FA
FA
V
V
FA
FA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
FA
FA
V
V
kI
kI
Maxim Integrated
2
MAX14611
Quad Bidirectional Low-Voltage
Logic-Level Translator
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +1.65V to +5.5V, V
L
= 0.9V to the lesser of V
CC
+ 0.3V and 5V. T
A
= T
J
= -40NC to +85NC, unless otherwise noted. Typical
values are at V
CC
= +3.3V, V
L
= +1.8V, T
A
= +25NC, unless otherwise noted.) (Notes 2, 3)
PARAMETER
I/OVL_ to I/OVCC_ DC
Resistance
I/OVL_ Input-Voltage High
I/OVL_ Input-Voltage Low
I/OVCC_ Input-Voltage High
I/OVCC_ Input-Voltage Low
I/OVL_ Output-Voltage High
I/OVL_ Output-Voltage Low
I/OVCC_ Output-Voltage High
I/OVCC_ Output Voltage Low
TS
Input-Voltage High Threshold
TS
Input-Voltage Low Threshold
Accelerator Pulse Duration
V
L
Output Accelerator Source
Impedance
V
CC
Output Accelerator Source
Impedance
Thermal-Shutdown Threshold
ESD PROTECTION
I/OVCC_
All Other Pins
Human Body Model, C
VCC
= 1FF,
C
VL
= 0.1FF
Human Body Model
Q6
Q2
kV
kV
SYMBOL
R
IOVL_IOVCC
V
IHL
V
ILL
V
IHC
V
ILC
V
OHL
V
OLL
V
OHC
V
OLC
V
IH
V
IL
V
L
> 1.3V
Inferred from timing measurements
V
L
= 0.9V
V
L
= 3.3V
V
CC
= 1.65V
V
CC
= 5.0V
20NC hysteresis
70
15
50
10
+150
I/OVL_ source current = 10FA
I/OVL_ sink current = 2mA,
V
I/OVCC_
P
50mV
I/OVCC_ source current = 10FA
I/OVCC_ sink current = 2mA,
V
I/OVL_
P
150mV
V
L
- 0.2
0.2
30
0.7 x V
CC
0.4
0.7 x V
L
0.4
V
CC
- 0.4
0.2
CONDITIONS
Inferred from V
OL
measurements
V
L
- 0.2
0.15
MIN
TYP
5
MAX
10
UNITS
I
V
V
V
V
V
V
V
V
V
V
ns
I
I
NC
Maxim Integrated
3
MAX14611
Quad Bidirectional Low-Voltage
Logic-Level Translator
TIMING CHARACTERISTICS
(V
CC
= +1.65V to +5.5V, V
L
= +0.9V to the lesser of V
CC
+ 0.3V and 5V,
TS
= V
L
, R
L
= 1Mω, C
VCC
= 1µF, C
VL
= 0.1µF, C
I/OVCC_
= 15pF,
C
I/OVL_
= 15pF, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are V
CC
= +3.3V, V
L
= +1.8V, and T
A
= +25NC.) (Note 4)
PARAMETER
I/OVCC_ Rise Time
I/OVCC_ Fall Time
I/OVL_ Rise Time
I/OVL_ Fall Time
Propagation Delay
Propagation Delay
SYMBOL
t
RVCC
t
FVCC
t
RVL
t
FVL
I/O
VL-VCC
I/O
VL-VCC
I/O
VCC-VL
I/O
VCC-VL
CONDITIONS
Push-pull driving (Figure 1)
Open-drain driving (Figure 2, Note 5)
Push-pull driving (Figure 1)
Open-drain driving (Figure 2, Note 5)
Push-pull driving (Figure 3)
Open-drain driving (Figure 4, Note 5)
Push-pull driving (Figure 3)
Open-drain driving (Figure 4, Note 5)
Push-pull driving (Figure 1)
Open-drain driving (Figure 2, Note 5)
Push-pull driving (Figure 3)
Open-drain driving (Figure 4, Note 5)
Input rise time/fall time < 6ns, push-pull
driving
Input rise time/fall time < 6ns, open-drain
driving
Push-pull operation
Open-drain operation (Notes 5, 6)
MIN
TYP
MAX
40
100
40
50
30
105
30
30
40
150
30
105
20
ns
50
20
6
Mbps
UNITS
ns
ns
ns
ns
ns
ns
Channel-to-Channel Skew
t
SKEW
Maximum Data Rate
Note 2:
All units are 100% production tested at T
A
= +25°C. Specifications over operating temperature range are guaranteed by
design.
Note 3:
V
L
must be less than or equal to V
CC
during normal operation. However, V
L
can be greater than V
CC
during startup and
shutdown conditions.
Note 4:
All timing is 10% to 90% for rise time and 90% to 10% for fall time.
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