NVMFS5C673NL
Power MOSFET
Features
60 V, 9.2 mW, 50 A, Single N−Channel
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS5C673NLWF
−
Wettable Flank Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 3)
Power Dissipation
R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
±20
50
35
46
23
14
10
3.6
1.8
290
−55
to
+ 175
52
88
260
A
°C
A
mJ
°C
1
www.onsemi.com
V
(BR)DSS
60 V
R
DS(ON)
MAX
9.2 mW @ 10 V
13 mW @ 4.5 V
I
D
MAX
50 A
Unit
V
V
A
G (4)
W
S (1,2,3)
A
N−CHANNEL MOSFET
D (5)
W
MARKING
DIAGRAM
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 2.3 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
−
Steady State
Junction−to−Ambient
−
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
3.2
42
Unit
°C/W
XXXXXX = 5C673L
XXXXXX =
(NVMFS5C673NL) or
XXXXXX =
673LWF
XXXXXX =
(NVMFS5C673NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2015
February, 2017
−
Rev. 1
1
Publication Order Number:
NVMFS5C673NL/D
NVMFS5C673NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 25 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 25 A, R
G
= 2.5
W
V
GS
= 10 V, V
DS
= 48 V; I
D
= 25 A
V
GS
= 4.5 V, V
DS
= 48 V; I
D
= 25 A
V
GS
= 10 V, V
DS
= 48 V; I
D
= 25 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 25 A
0.9
0.8
28
14
14
18
nC
ns
1.2
V
6.0
25
16
2.0
ns
880
450
11
4.5
9.5
1.0
2.0
0.8
2.9
V
nC
nC
nC
pF
I
D
= 25 A
I
D
= 25 A
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
60
28
10
250
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
= 20 V
V
GS
= V
DS
, I
D
= 35
mA
1.2
−4.5
7.7
11
37
2.0
V
mV/°C
9.2
13
mW
S
V
DS
=15 V, I
D
= 25 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS5C673NL
TYPICAL CHARACTERISTICS
40
35
I
D
, DRAIN CURRENT (A)
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.8 V
2.6 V
2.4 V
2.5
40
35
I
D
, DRAIN CURRENT (A)
30
25
20
15
10
5
0
0
0.5
1.0
T
J
= 25°C
V
DS
= 3 V
V
GS
= 3.6 V to 10 V
3.2 V
3.0 V
T
J
= 125°C
1.5
2.0
T
J
=
−55°C
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
40
35
30
25
20
15
10
5
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
I
D
= 25 A
20
18
16
14
12
10
8
6
0
10
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
20
30
40
50
60
70
80
90 100
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.25
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.00
1.75
1.50
1.25
1.00
0.75
0.50
−50
−25
0
25
50
75
100
125
150
175
V
GS
= 10 V
I
D
= 25 A
100,000
10,000
I
DSS
, LEAKAGE (nA)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 175°C
T
J
= 125°C
1000
T
J
= 85°C
100
10
1
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NVMFS5C673NL
TYPICAL CHARACTERISTICS
10000
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
V
DS
= 30 V
T
J
= 25°C
I
D
= 25 A
8
9
10
Q
GS
Q
GD
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Q
T
C, CAPACITANCE (pF)
1000
C
ISS
C
OSS
100
10
1
0
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
10
20
30
40
50
C
RSS
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
I
S
, SOURCE CURRENT (A)
t
r
10
t
d(off)
t
d(on)
100
Figure 8. Gate−to−Source vs. Total Charge
V
GS
= 0 V
t, TIME (ns)
10
1
t
f
V
GS
= 10 V
V
DS
= 48 V
I
D
= 25 A
1
10
R
G
, GATE RESISTANCE (W)
100
1
0.1
0.1
T
J
= 125°C
0.3
0.4
0.5
T
J
= 25°C
0.6
0.7
0.8
T
J
=
−55°C
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10 ms
10
1
0.1
0.01
T
C
= 25°C
V
GS
≤
10 V
Single Pulse
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
500
ms
I
PEAK
, DRAIN CURRENT (A)
1 ms
I
D
, DRAIN CURRENT (A)
100
Figure 10. Diode Forward Voltage vs. Current
10
T
J
(initial)= 25°C
1
T
J
(initial)= 100°C
0.1
1.E−05
1.E−04
1.E−03
1.E−02
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
AV
, TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
www.onsemi.com
4
NVMFS5C673NL
TYPICAL CHARACTERISTICS
R
qJA
, EFFECTIVE TRANSIENT THERMAL
RESISTANCE (°C/W)
100
50% Duty Cycle
10 20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
0.01
0.000001
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NVMFS5C673NLT1G
NVMFS5C673NLWFT1G
NVMFS5C673NLT3G
NVMFS5C673NLWFT3G
NVMFS5C673NLAFT1G
NVMFS5C673NLWFAFT1G
Marking
5C673L
673LWF
5C673L
673LWF
5C673L
673LWF
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
1500 / Tape & Reel
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
