NTMFS4H02NF
Power MOSFET
25 V, 193 A, Single N−Channel, SO−8FL
Features
•
•
•
•
•
•
•
•
•
Integrated Schottky Diode
Optimized Design to Minimize Conduction and Switching Losses
Optimized Package to Minimize Parasitic Inductances
Optimized material for improved thermal performance
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
High Performance DC-DC Converters
System Voltage Rails
Netcom, Telecom
Servers & Point of Load
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current R
qJA
(T
A
= 25°C, Note 1)
Power Dissipation R
qJA
(T
A
= 25°C, Note 1)
Continuous Drain Current R
qJC
(T
C
= 25°C, Note 1)
Power Dissipation R
qJC
(T
C
= 25°C, Note 1)
Pulsed Drain Current (t
p
= 10
ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1) (I
L
= 38 A
pk
, L = 0.3 mH)
Drain to Source dV/dt
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
Symbol
V
DSS
V
GS
I
D
P
D
I
D
P
D
I
DM
E
AS
dV/dt
T
J(max)
T
STG
T
SLD
Value
25
±20
37
3.13
193
83
449
223
7
150
−55 to
150
260
Units
V
V
A
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V
GS
4.5 V
10 V
MAX R
DS(on)
2.3 mW
1.4 mW
TYP Q
GTOT
17.4 nC
39.3 nC
Applications
PIN CONNECTIONS
SO8−FL (5 x 6 mm)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
(Top View)
W
A
W
A
mJ
(4)
V/ns
°C
°C
°C
S
(Bottom View)
N−CHANNEL MOSFET
D
(5, 6)
G
(1, 2, 3)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm
2
(or 1 in
2
) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 26 A, E
AS
= 101 mJ.
THERMALCHARACTERISTICS
Parameter
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
Symbol
R
qJA
R
qJC
Max
40.0
1.5
Units
°C/W
4. Thermal Resistance R
qJA
and R
qJC
as defined in JESD51−3.
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 3
Publication Order Number:
NTMFS4H02NF/D
NTMFS4H02NF
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
g
FS
I
D
= 30 A
I
D
= 30 A
V
GS
= V
DS
, I
D
= 250
mA
1.2
3.3
1.1
1.6
84
1.4
2.3
mW
S
2.1
V
mV/°C
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS
= 0 V, V
DS
= 20 V
T
J
= 25°C
V
GS
= 0 V, I
D
= 250
mA
25
18.6
500
+100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
= +20 V
V
DS
= 12 V, I
D
= 15 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Gate Resistance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
R
G
V
GS
= 10 V, V
DS
= 12 V; I
D
= 30 A
T
A
= 25°C
V
GS
= 4.5 V, V
DS
= 12 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
2652
1644
94
18.7
2.8
7.5
4.3
40.9
1.0
2
nC
W
nC
pF
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DD
= 12 V, I
D
= 15 A,
R
G
= 3.0
W
13.5
46.7
24.8
7.72
ns
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 2.0 A
T
J
= 25°C
T
J
= 125°C
0.38
0.29
41
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
20.2
20.8
30
nC
ns
0.6
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DD
= 12 V,
I
D
= 15 A, R
G
= 3.0
W
10
35.7
32.3
4.93
ns
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4H02NF
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
L
S
L
D
L
G
T
A
= 25°C
0.57
0.13
1.37
nH
nH
nH
Symbol
Test Condition
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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NTMFS4H02NF
TYPICAL CHARACTERISTICS
140
I
D
, DRAIN CURRENT (A)
120
100
V
GS
= 10 V to 3.7 V
V
GS
= 3.5 V
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
V
GS
= 3.3 V
V
GS
= 3.1 V
140
120
100
80
60
40
20
0
V
DS
= 5 V
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
= 2.9 V
V
GS
= 2.7 V
V
GS
= 2.5 V
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0030
V
GS
= 30 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0020
Figure 2. Transfer Characteristics
0.0019
0.0018
0.0017
V
GS
= 4.5 V
T = 25°C
0.0025
0.0016
0.0015
0.0014
0.0020
0.0015
0.0013
0.0012
0.0011
20
30
40
V
GS
= 10 V
50
60
70
80
90
100 110 120
0.0010
3
4
5
6
V
GS
(V)
7
8
9
10
0.0010
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.7
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
I
D
= 30 A
V
GS
= 10 V
1E−01
1E−02
I
DSS
, LEAKAGE (A)
1E−03
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
1E−04
1E−05
T
J
= 25°C
1E−06
1E−07
−25
0
25
50
75
100
125
150
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMFS4H02NF
TYPICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
400
0
0
5
10
C
rss
15
C
iss
10
Q
T
T
J
= 25°C
V
GS
= 0 V
8
6
Q
gs
Q
gd
T
J
= 25°C
V
GS
= 10 V
V
DD
= 12.0 V
I
D
= 30 A
0
4
8
12
16
20
24
28
32
36
40
C
oss
4
2
0
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 12 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
25
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
20
T
J
= 125°C
15
T
J
= 25°C
10
t
d(on)
10
5
0
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.40 0.45
0.50
0.55
0.60
0.65
0.70
0.75
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
10
ms
100
ms
10
1 ms
1
0 V < V
GS
< 10 V
10 ms
dc
110
100
90
80
70
60
50
40
30
20
10
0
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
I
D
= 26 A
0.1
0.01
0.01
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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