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MGSF3442XT1

产品描述Small-Signal MOSFETs Single N-Channel Field Effect Transistors
产品类别分立半导体    晶体管   
文件大小122KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

MGSF3442XT1概述

Small-Signal MOSFETs Single N-Channel Field Effect Transistors

MGSF3442XT1规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ON Semiconductor(安森美)
零件包装代码TSOP
包装说明PLASTIC, CASE 318G-02, TSOP-6
针数6
制造商包装代码CASE 318G-02
Reach Compliance Code_compli
ECCN代码EAR99
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压20 V
最大漏极电流 (Abs) (ID)1.7 A
最大漏极电流 (ID)1.7 A
最大漏源导通电阻0.07 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-PDSO-G6
JESD-609代码e0
元件数量1
端子数量6
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)0.4 W
认证状态Not Qualified
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON

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MGSF3442XT1
Preliminary Information
Low R
DS(on)
Small-Signal
MOSFETs Single N-Channel
Field Effect Transistors
These miniature surface mount MOSFETs utilize the High Cell
Density, HDTMOS process. Low r
DS(on)
assures minimal power loss
and conserves energy, making this device ideal for use in small power
management circuitry. Typical applications are dc−dc converters,
power management in portable and battery−powered products such as
computers, printers, PCMCIA cards, cellular and cordless telephones.
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Miniature TSOP 6 Surface Mount Package Saves Board Space
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Drain Current
Continuous @ T
A
= 25°C
Drain Current
Pulsed Drain Current (t
p
10
μs)
Total Power Dissipation @ T
A
= 25°C
Operating and Storage Temperature Range
Thermal Resistance
Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
θJA
T
L
Value
20
±
8.0
1.7
20
400
55 to
150
300
260
Unit
Vdc
Vdc
A
DRAIN
D
D
G
http://onsemi.com
N−CHANNEL
ENHANCEMENT−MODE
MOSFET
R
DS(on)
= 58 mΩ (TYP)
D
D
S
CASE 318G−02, Style 1
TSOP 6 PLASTIC
1 2 5 6
mW
°C
°C/W
°C
3
GATE
SOURCE
4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MGSF3442XT1
MGSF3442XT3
Reel Size
7″
13″
Tape Width
8 mm embossed tape
8 mm embossed tape
Quantity
3000
10,000
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
Rev. 2
1
Publication Order Number:
MGSF3442XT1/D

MGSF3442XT1相似产品对比

MGSF3442XT1 MGSF3442XT3
描述 Small-Signal MOSFETs Single N-Channel Field Effect Transistors Small-Signal MOSFETs Single N-Channel Field Effect Transistors
是否Rohs认证 不符合 不符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 TSOP TSOP
包装说明 PLASTIC, CASE 318G-02, TSOP-6 PLASTIC, CASE 318G-02, TSOP-6
针数 6 6
制造商包装代码 CASE 318G-02 CASE 318G-02
Reach Compliance Code _compli _compli
ECCN代码 EAR99 EAR99
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 20 V 20 V
最大漏极电流 (Abs) (ID) 1.7 A 1.7 A
最大漏极电流 (ID) 1.7 A 1.7 A
最大漏源导通电阻 0.07 Ω 0.07 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-G6 R-PDSO-G6
JESD-609代码 e0 e0
元件数量 1 1
端子数量 6 6
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 0.4 W 0.4 W
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON

 
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