NVTFS4C06N
Power MOSFET
30 V, 4.2 mW, 71 A, Single N−Channel,
m8FL
Features
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVTFS4C06NWF − Wettable Flanks Product
NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Notes 1, 2, 4)
Power Dissipation R
qJA
(Note 1, 2, 4)
Continuous Drain
Current R
qJC
(Note 1,
3, 4)
Power Dissipation
R
qJC
(Note 1, 3, 4)
Pulsed Drain Current
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
,
T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
21
15
3.1
1.6
71
50
37
18
367
−55 to
+175
33
34
260
A
°C
A
mJ
°C
A
W
W
Unit
V
V
A
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V
(BR)DSS
30 V
6.1 mW @ 4.5 V
R
DS(on)
MAX
4.2 mW @ 10 V
71 A
I
D
MAX
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
MARKING DIAGRAM
1
1
WDFN8
(m8FL)
CASE 511AB
4C06
06WF
A
Y
WW
G
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, I
L
= 26 A
pk
, L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code for
NVMTS4C06N
= Specific Device Code of
NVTFS4C06NWF
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State (Drain)
(Notes 1 and 4)
Junction−to−Ambient – Steady State
(Notes 1 and 2)
Symbol
R
qJC
R
qJA
Value
4.1
48
°C/W
Unit
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm
2
2 oz. Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 1
Publication Order Number:
NVTFS4C06N/D
NVTFS4C06N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
14.4
1.0
10
±100
1.3
3.8
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.8
0.63
34
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
17
17
22
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
10
32
18
5.0
8.0
28
24
3.0
ns
ns
C
ISS
C
OSS
C
RSS
C
RSS
/C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
1683
841
40
0.023
11.6
2.6
4.7
4.0
3.1
26
V
nC
nC
pF
g
FS
R
G
T
A
= 25°C
I
D
= 30 A
I
D
= 30 A
3.4
4.9
58
1.0
4.2
6.1
mW
S
W
2.2
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
V
mV/°C
V
DS
= 1.5 V, I
D
= 15 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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NVTFS4C06N
TYPICAL CHARACTERISTICS
80
60
I
D
, DRAIN CURRENT (A)
50
40
30
2.8 V
20
10
0
0
2.2 V
2.6 V
2.4 V
0.5
1
1.5
2
2.5
3
3.4 V
3.6 V
4.0 V to 10 V
3.0 V
T
J
= 25°C
3.2 V
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
T
J
= 125°C
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
T
J
= −55°C
V
DS
= 5 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
I
D
= 30 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
10
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.8
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1.0
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
175
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVTFS4C06N
TYPICAL CHARACTERISTICS
2000
1800
C, CAPACITANCE (pF)
1600
1400
1200
1000
800
600
400
200
0
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
10
Q
T
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
4
Q
gs
Q
gd
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
4
6
8
10 12 14 16 18 20 22 24 26
2
0
0
2
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
100
t, TIME (ns)
t
r
t
d(on)
t
f
1.0
1
10
R
G
, GATE RESISTANCE (W)
100
20
18
t
d(off)
16
14
12
10
8
6
4
2
0
0.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
10
T
J
= 125°C
T
J
= 25°C
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
Figure 10. Diode Forward Voltage vs. Current
10
ms
I
D
, DRAIN CURRENT (A)
10
dc
100
ms
1
V
GS
= 10 V
T
C
= 25°C
650 mm
2
2 oz Cu Pad
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
100
1 ms
10 ms
0.1
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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NVTFS4C06N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10
R
qJA(t)
(°C/W)
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Response
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
I
D
(A)
35
40
45
50
55
60
100
I
PEAK
, DRAIN CURRENT (A)
T
J(initial)
= 25°C
T
J(initial)
= 125°C
G
FS
(S)
10
1
1.0E−06
1.0E−05
1.0E−04
1.E−03
T
AV
, TIME IN AVALANCHE (s)
Figure 13. G
FS
vs. I
D
Figure 14. Avalanche Characteristics
ORDERING INFORMATION
Device
NVTFS4C06NTAG
NVTFS4C06NWFTAG
NVTFS4C06NTWG
NVTFS4C06NWFTWG
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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