SEMICONDUCTOR
N-60EPU12 Series
FRED
Ultrafast Soft Recovery Diode, 60 A
RoHS
RoHS
N
ell
High Power Products
FEATURES
Ultrafast recovery
175
°C
operating junction temperature
Designed and qualified for industrial level
N-60EPU12
N-60APU12
-
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
Cathode
to base
2
Cathode
to base
2
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
1
Cathode
3
Anode
1
Anode
3
Anode
TO-247AC modified
TO-247AB
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
35
ns
60
A
1200
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
R
l
F(AV)
l
FSM
l
FRM
T
j
, T
Stg
T
C
= 100
°C
T
C
= 25
°C
Square wave,
20
kHz
TEST CONDITIONS
VALUES
1200
60
570
100
- 55
to
175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T
J
= 25
ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
V
BR,
V
r
V
F
l
R
= 100µA
l
F
= 60A
1200
-
-
-
-
-
-
2.8
3.3
2.1
-
-
-
3.3
-
-
100
500
-
pF
µA
V
Forward voltage
l
F
= 120A
l
F
= 60A, T
J
= 125°C
Reverse leakage current
Junction capacitance
l
R
C
T
V
R
= V
R
rated
T
J
= 150°C, V
R
= V
R
rated
V
R
= 200V
-
50
Page 1 of 6
SEMICONDUCTOR
N-60EPU12 Series
RoHS
RoHS
N
ell
High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
(T
J
= 25
ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
I
F
= 0.5A, I
R
= 1A, I
RR
=0.25A (RG#1 CKT)
Reverse recovery time
t
rr
I
F
= 1A, dI
F
/dt = 200 A/µs, V
R
=30V
T
J
= 25°C
T
J
= 125°C
Peak recovery current
l
RRM
Q
rr
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 60
A
dI
F
/dt = 200
A/µs
V
R
= 800
V
-
-
-
-
-
-
-
-
55
30
330
430
5
12
650
2800
60
-
-
-
-
-
-
-
A
ns
Reverse recovery charge
nC
THERMAL
-
MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
R
thJC
R
thCS
Mounting surface, flat, smooth
and greased
-
-
-
-
0.6
(5)
Case style TO-247AC modified
Case style TO-247AC
-
0.5
5.5
0.2
-
0.38
°C/W
-
-
-
1.2
(10)
g
oz.
N⋅ m
(lbf .
in)
60EPU12
60APU12
Marking device
Page 2 of 6
SEMICONDUCTOR
N-60EPU12 Series
RoHS
RoHS
N
ell
High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.45
, thermal impedance- Z
θJC
(°C/W)
0.40
D
= 0.9
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
-5
0.1
0.05
10
-4
10
-3
10
-2
10
-1
1
Single pulse
0.5
Note:
0.7
P
DM
t
1
t
2
0.3
Duty Factor D = t
1
/t
2
Peak T
J
= P
DM
x Z
θJC
+ T
C
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
200
180
Fig3. Reverse recovery time vs. current rate
of change
500
T J = 125°C
V R = 800V
160
140
120
100
80
60
40
T J = -55°C
T J = 25°C
T J = 175°C
Reverse recovery time-t
rr
(ns)
Forward current-l
F
(A)
400
300
120A
200
T J = 125°C
60A
30A
100
20
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
0
200
400
600
800
1000
1200
Anode-to-cathode voltage-V
F
(V)
Current rate of change-di
F
/dt(A/µs)
Fig.4 Reverse recovery charge vs. current
rate of change
7000
Fig.5 Reverse recovery current vs. current
rate of change
Reverse recovery current-l
RRM
(A)
40
T J = 125°C
Reverse recovery charge-Q
rr
(nC)
T J = 125°C
120A
6000
5000
V R = 800V
120A
60A
30A
35
30
25
20
15
10
5
0
V R = 800V
60A
4000
3000
2000
1000
0
0
200
400
600
800
1000
1200
30A
0
200
400
600
800
1000
1200
Current rate of change-di
F
/dt(A/µs)
Current rate of change-di
F
/dt(A/µs)
Page 3 of 6
SEMICONDUCTOR
N-60EPU12 Series
RoHS
RoHS
N
ell
High Power Products
Fig.6 Dynamic parameters vs. junction temperature
1.2
Fig.7 Maximum average forward current vs.
case temperature
100
90
Duty cycle
= 0.5
T J = 175°C
Dynamic parameters-K
f
(Normalized to 1000A/µs )
1
80
0.8
0.6
t
rr
l
F(AV)
(A)
75
70
60
40
30
l
RRM
0.4
Q
rr
0.2
0
0
25
50
100
125
150
20
10
0
25
50
75
100
125
150
175
Junction temperature-T
J
(°C)
Fig.8 Junction capacitance vs. reverse voltage
300
Case temperature (°C)
Junction capacitance-C
J
(pF)
250
200
150
100
50
0
1
10
100
200
Reverse voltage-V
R
(V)
Ordering Information Tabel
Device code
N
1
1
2
3
4
5
6
-
-
-
-
-
-
Nell
-
60
2
E
3
P
4
U
5
12
Current rating
Single Diode
(60 = 60A)
E = 2 pins
A = 3 pins
TO-247AC
(Modified)
Ultrafast Recovery
Voltage Rating
(12 = 1200
V)
Page 4 of 6
SEMICONDUCTOR
N-60EPU12 Series
RoHS
RoHS
N
ell
High Power Products
Fig.9 Reverse recovery parameter test circuit
Fig.10 Reverse recovery waveform and definitions
Page 5 of 6
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