Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3P(H)IS package
・High
speed
・High
voltage
・Low
saturation voltage
・Bult-in
damper type
APPLICATIONS
・Horizontal
deflection output for medium
resolution display
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SC4764
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
±6
±12
3
50
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC4764
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
V
F
f
T
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector output capacitance
Forward voltage(damper diode)
Transition frequency
CONDITIONS
I
E
=300mA ;I
C
=0
I
C
=4A; I
B
=0.8A
I
C
=4A; I
B
=0.8A
V
CB
=1500V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=4A ; V
CE
=5V
I
E
=0 ; V
CB
=10V,f=1MHz
I
F
=4A
I
E
=0.1A ; V
CE
=10V
1
83
8
5
170
1.2
3
1.8
12
9
pF
V
MHz
MIN
5
5
1.5
1
250
TYP.
MAX
UNIT
V
V
V
mA
mA
Switching times (inductive load)
t
s
t
f
Storage time
Fall time
I
CP
=4A;I
B1
(end)
=0.8A
f
H
=31.5kHz
3.2
0.2
5.0
0.5
μs
μs
JMnic
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