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SG75327J

产品描述QUAD SOURCE MEMORY DRIVER
产品类别模拟混合信号IC    驱动程序和接口   
文件大小34KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览 文档解析

SG75327J概述

QUAD SOURCE MEMORY DRIVER

SG75327J规格参数

参数名称属性值
厂商名称Microsemi
零件包装代码DIP
包装说明DIP,
针数16
Reach Compliance Codecompli
ECCN代码EAR99
接口集成电路类型AND GATE BASED PERIPHERAL DRIVER
JESD-30 代码R-CDIP-T16
长度19.62 mm
功能数量4
端子数量16
最高工作温度70 °C
最低工作温度
输出电流流向SINK
标称输出峰值电流0.75 A
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DIP
封装形状RECTANGULAR
封装形式IN-LINE
认证状态Not Qualified
座面最大高度5.08 mm
最大供电电压5.5 V
最小供电电压4.5 V
标称供电电压5 V
电源电压1-最大24 V
电源电压1-分钟4.5 V
表面贴装NO
温度等级COMMERCIAL
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
断开时间0.055 µs
接通时间0.055 µs
宽度7.62 mm

文档解析

SG55327/SG75327 是 LINFINITY Microelectronics 推出的一款单片四源存储器驱动器,专为满足磁存储器系统的高电流和快速开关速度需求而设计。该器件采用独立控制架构,每个驱动器通道能够吸收高达600mA的电流,确保在 demanding 应用中提供稳定性能。其核心功能包括支持可变驱动电压和高速操作,适用于多种电子系统。 在技术规格方面,操作电压VCC1范围为4.5V至5.5V,VCC2驱动电压可从4.5V调整至24V,输出集电极电压最高为24V。器件输入与TTL电平兼容,便于集成到数字逻辑电路中。动态性能参数包括低传播延迟和快速过渡时间,支持高重复率操作,典型值如传播延迟低至55ns。封装选项包括16-pin陶瓷DIP、塑料DIP和扁平封装,适应不同环境下的安装需求。热管理数据提供 junction-to-case 和 junction-to-ambient thermal resistance,确保在指定温度范围内可靠运行。 该驱动器不仅用于磁存储器系统,还广泛应用于非存储器领域,如时钟电路、继电器驱动、指示灯控制和小型电机驱动。其高电流能力和快速响应特性使其成为工业自动化、消费电子和军事应用的理想选择,军用版本SG55327支持-55°C至125°C温度范围,商用版本SG75327覆盖0°C至70°C。

文档预览

下载PDF文档
SG55327/SG75327
QUAD SOURCE MEMORY DRIVER
DESCRIPTION
The SG55327/SG75327 is a monolithic quad source driver
designed to meet the high current and fast switching speed
requirements of magnetic memory systems. Each driver is
independently controlled and capable of sinking up to 600mA.
Paired with the SG55326 Quad Sink Driver, the SG55327/
SG75327 provides the current drive necessary for many sink/
source applications.
The SG55327/SG75327 has also been used in many non-memory
applications: for example, as the driver for a clock circuit, relay,
lamp, or small motor, or any application where a 600mA source
driver is needed.
The SG55327 is characterized for use over the full military
operating ambient temperature range of -55°C to 125°C while the
SG75327 is characterized from 0°C to 70°C.
These devices are available in 16-pin ceramic DIP, 16-pin plastic
DIP and 16-pin flatpack.
FEATURES
Quad source memory drivers
600mA output current capability
V
CC2
drive voltage variable to 24V
Output capable of swinging between V
CC2
and
ground
High-repetition-rate driver compatible with high–
speed magnetic memories
Inputs compatible with TTL decoders
Minimum time skew between strobe and output–
current rise
Pulse-transformer coupling eliminated
Drive-line lengths reduced
HIGH RELIABILITY FEATURES - SG55327
Available to MIL-STD-883
Scheduled for MIL-M-38510 QPL listing
LMI level “S” processing available
BLOCK DIAGRAM
4/90 Rev 1.2 7/96
Copyright
©
1994
1
11861 Western Avenue
Garden Grove, CA 92841
(714) 898-8121
FAX: (714) 893-2570
L
INFINITY
Microelectronics Inc.

SG75327J相似产品对比

SG75327J SG55327F-883B SG75327N SG75327 SG55327J SG55327J/883B SG55327F SG55327F/883B SG55327
描述 QUAD SOURCE MEMORY DRIVER QUAD SOURCE MEMORY DRIVER QUAD SOURCE MEMORY DRIVER QUAD SOURCE MEMORY DRIVER QUAD SOURCE MEMORY DRIVER QUAD SOURCE MEMORY DRIVER QUAD SOURCE MEMORY DRIVER QUAD SOURCE MEMORY DRIVER QUAD SOURCE MEMORY DRIVER
厂商名称 Microsemi - Microsemi - Microsemi Microsemi Microsemi Microsemi -
零件包装代码 DIP - DIP - DIP DIP DFP DFP -
包装说明 DIP, - DIP, - DIP, DIP, DFP, DFP, -
针数 16 - 16 - 16 16 16 16 -
Reach Compliance Code compli - unknow - compli unknow compli unknow -
ECCN代码 EAR99 - EAR99 - EAR99 EAR99 EAR99 EAR99 -
接口集成电路类型 AND GATE BASED PERIPHERAL DRIVER - AND GATE BASED PERIPHERAL DRIVER - AND GATE BASED PERIPHERAL DRIVER AND GATE BASED PERIPHERAL DRIVER AND GATE BASED PERIPHERAL DRIVER AND GATE BASED PERIPHERAL DRIVER -
JESD-30 代码 R-CDIP-T16 - R-PDIP-T16 - R-CDIP-T16 R-CDIP-T16 R-CDFP-F16 R-CDFP-F16 -
功能数量 4 - 4 - 4 4 4 4 -
端子数量 16 - 16 - 16 16 16 16 -
最高工作温度 70 °C - 70 °C - 125 °C 125 °C 125 °C 125 °C -
输出电流流向 SINK - SINK - SINK SINK SINK SINK -
标称输出峰值电流 0.75 A - 0.75 A - 0.75 A 0.75 A 0.75 A 0.75 A -
封装主体材料 CERAMIC, METAL-SEALED COFIRED - PLASTIC/EPOXY - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED -
封装代码 DIP - DIP - DIP DIP DFP DFP -
封装形状 RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 IN-LINE - IN-LINE - IN-LINE IN-LINE FLATPACK FLATPACK -
认证状态 Not Qualified - Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified -
座面最大高度 5.08 mm - 5.08 mm - 5.08 mm 5.08 mm 1.91 mm 1.91 mm -
最大供电电压 5.5 V - 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V -
最小供电电压 4.5 V - 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V -
标称供电电压 5 V - 5 V - 5 V 5 V 5 V 5 V -
电源电压1-最大 24 V - 24 V - 24 V 24 V 24 V 24 V -
电源电压1-分钟 4.5 V - 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V -
表面贴装 NO - NO - NO NO YES YES -
温度等级 COMMERCIAL - COMMERCIAL - MILITARY MILITARY MILITARY MILITARY -
端子形式 THROUGH-HOLE - THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE FLAT FLAT -
端子节距 2.54 mm - 2.54 mm - 2.54 mm 2.54 mm 1.27 mm 1.27 mm -
端子位置 DUAL - DUAL - DUAL DUAL DUAL DUAL -
断开时间 0.055 µs - 0.055 µs - 0.055 µs 0.055 µs 0.055 µs 0.055 µs -
接通时间 0.055 µs - 0.055 µs - 0.055 µs 0.055 µs 0.055 µs 0.055 µs -
宽度 7.62 mm - 7.62 mm - 7.62 mm 7.62 mm 6.45 mm 6.45 mm -

 
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