SGF15N90D
IGBT
SGF15N90D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for induction heating applications.
Features
•
•
•
•
High speed switching
Low saturation voltage : V
CE(sat)
= 2.0 V @ I
C
= 15A
High input impedance
Built-in fast recovery diode
Applications
Home appliances, induction heaters, induction hea 1 ting JARs, and microwave ovens.
C
G
TO-3PF
C
E
T
C
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes,1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGF15N90D
900
±
25
15
12
30
12
83
33
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
1.5
2.86
40
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGF15N90D Rev. A1
SGF15N90D
Electrical Characteristics of the IGBT
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250µA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
900
--
--
--
--
--
--
1.0
±
500
V
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 15mA, V
CE
= V
GE
I
C
= 2.5A
,
V
GE
= 15V
I
C
= 15A
,
V
GE
= 15V
4.0
--
--
5.0
1.4
2.0
7.0
1.8
2.7
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
=10V
,
V
GE
= 0V,
f = 1MHz
--
--
--
1500
80
50
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 600 V, I
C
= 15A,
R
G
= 51Ω, V
GE
= 15V,
Resistive Load, T
C
25°C
V
CE
= 600 V, I
C
= 15A,
V
GE
= 15V
--
--
--
--
--
--
--
50
180
150
200
60
15
20
80
280
230
320
80
--
--
ns
ns
ns
ns
nC
nC
nC
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
R
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Instantaneous Reverse Current
C
= 25°C unless otherwise noted
Test Conditions
I
F
= 4A
I
F
= 15A
I
F
= 15A, di/dt = 20 A/µs
V
RRM
= 900V
Min.
--
--
--
--
Typ.
1.1
1.45
0.8
0.03
Max.
1.6
1.7
1.2
1.2
Units
V
V
us
uA
©2002 Fairchild Semiconductor Corporation
SGF15N90D Rev. A1
SGF15N90D
50
Common Emitter
T
C
= 25℃
40
20V
15V
10V
50
9V
40
Common Emitter
V
GE
= 15V
T
C
= 25℃
━━
T
C
= 125℃ ------
8V
30
Collector Current, I
C
[A]
Collector Current, I
C
[A]
30
20
7V
10
V
GE
= 6V
0
0
1
2
3
4
5
20
10
0
0
1
2
3
4
5
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage,V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
3.0
V
GE
= 15V
10
Common Emitter
T
C
= -40℃
Collector-Emitter Voltage , V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
8
2.5
20A
2.0
15A
10A
1.5
I
C
= 5A
6
4
15A
10A
20A
I
C
= 5A
2
1.0
-50
0
50
100
150
0
4
8
12
16
20
Case Temperature, T
C
[
℃
]
Gate-Emitter Voltage, V
GE
[V]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Saturation Voltage vs. V
GE
10
Common Emitter
T
C
= 25℃
10
Common Emitter
T
C
= 125℃
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
8
8
6
6
15A
4
10A
20A
2
I
C
= 5A
0
4
8
12
16
20
15A
4
10A
20A
2
I
C
= 5A
0
4
8
12
16
20
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGF15N90D Rev. A1
SGF15N90D
2000
Cies
10000
V
CC
= 600V
I
C
= 15A
V
GE
=
±
15V
T
C
= 25℃
Switching Time [ns]
Capacitance [pF]
1000
1000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Tf
Tr
100
Toff
Ton
10
Coes
Cres
1
10
0
50
100
150
200
Collector-Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Switching Characteristics vs.
Gate Resistance
1000
V
CC
=600V
R
G
=51Ω
V
G E
=± 15V
T
C
=25℃
15
Common Emitter
V
CC
= 600V, R
L
= 40Ω
T
C
= 25℃
Tf
100
Tdoff
Gate-Emitter Voltage, V
GE
[V]
15
12
Switching Time [ns]
9
Tr
6
3
Tdon
10
0
3
6
9
12
0
0
20
40
60
80
Collector Current,Ic [A]
Gate Charge, Q
g
[nC]
Fig 9. Switching Characteristics vs.
Collector current
Fig 10. Gate Charge Characteristics
100
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
10
10
Thermal Response, Zthjc [C/W]
Collector Current ,I
C
[A]
100us
10ms
1
DC Operation
1ms
1
0.5
0.2
0.1
o
0.1
0.05
0.02
0.01
Pdm
t1
t2
0.1
Single Nonrepetitive Pulse
T
C
= 25℃
Curve must be darated
linearly with increase
in temperature
1
10
100
1000
0.01
single pulse
10
-5
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
0.01
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, V
CE
[V]
Rectangular Pulse Duration [sec]
Fig 11. SOA Characteristics
©2002 Fairchild Semiconductor Corporation
Fig 12. Transient Thermal Impedance of IGBT
SGF15N90D Rev. A1
SGF15N90D
30
Reverse Recovery Time, t
rr
[us]
T
C
= 25℃
━━
T
C
= 100℃ ------
1.0
0.9
0.8
0.7
0.6
0.5
t
rr
0.4
0.3
0.2
I
rr
0.1
I
F
= 15A
T
C
= 25℃
100
90
Reverse Recovery Current, I
rr
[A]
10
80
70
60
50
40
30
20
10
0
0
40
80
120
160
200
Forward Current, I
F
[A]
1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
Forward Voltage, V
FM
[V]
0.0
di/dt [A/us]
Fig 13. Forward Characteristics
Fig 14. Reverse Recovery Characteristics vs. di/dt
1.2
12
di/dt = 20A/us
T
C
= 25℃
1000
T
C
= 25℃
━━
T
C
= 150℃ ------
100
Reverse Recovery Time, t
rr
[us]
Reverse Recovery Current, I
rr
[A]
1.0
10
0.8
t
rr
0.6
I
rr
8
Reverse Current, I
R
[uA]
10
6
1
0.4
4
0.2
2
0.1
0.0
0
5
10
15
20
0
0.01
0
300
600
900
Forward Current, I
F
[A]
Reverse Voltage, V
R
[V]
Fig 15. Reverse Recovery Characteristics
vs. Forward current
Fig 16. Reverse Current vs. Reverse Voltage
100
T
C
= 25℃
Junction Capacitance, C
j
[pF]
80
60
40
20
0
0.1
1
10
100
Reverse Voltage, V
R
[V]
Fig 17. Junction Capacitance
©2002 Fairchild Semiconductor Corporation
SGF15N90D Rev. A1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
