SGP23N60UFD
IGBT
SGP23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
•
•
•
•
High speed switching
Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 12A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 42ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GCE
TO-220
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGP23N60UFD
600
±
20
23
12
92
12
92
100
40
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
1.2
2.5
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
SGP23N60UFD
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 12mA, V
CE
= V
GE
I
C
= 12A
,
V
GE
= 15V
I
C
= 23A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
720
100
25
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
17
27
60
70
115
135
250
23
32
100
220
205
320
525
49
11
14
7.5
--
--
130
150
--
--
400
--
--
200
250
--
--
800
80
17
22
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 12A,
R
G
= 23Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 12A,
R
G
= 23Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 300 V, I
C
= 12A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 12A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 12A,
di/dt = 200A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
42
80
3.5
5.6
80
220
Max.
1.7
--
60
--
6.0
--
180
--
Units
V
ns
A
nC
©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
SGP23N60UFD
100
Common Emitter
T
C
= 25℃
80
20V
15V
50
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
Collector Current, I
C
[A]
60
12V
Collector Current, I
C
[A]
8
40
30
40
V
GE
= 10V
20
20
10
0
0
2
4
6
0
0.5
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
20
Common Emitter
V
GE
= 15V
V
CC
= 300V
Load Current : peak of square wave
Collector - Emitter Voltage, V
CE
[V]
3
24A
15
2
12A
Load Current [A]
10
I
C
= 6A
1
5
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 21W
0.1
1
10
100
1000
0
0
30
60
90
120
150
0
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
16
16
12
12
8
8
24A
4
I
C
= 6A
0
12A
4
I
C
= 6A
0
0
4
24A
12A
8
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGP23N60UFD Rev. A1
SGP23N60UFD
1200
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Cies
200
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 12A
T
C
= 25℃
T
C
= 125℃
1000
Ton
100
Capacitance [pF]
800
Switching Time [ns]
Tr
600
Coes
400
200
Cres
0
1
10
30
10
1
10
100
200
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 12A
T
C
= 25℃
T
C
= 125℃
1000
Eoff
Switching Loss [uJ]
Toff
Eon
Eon
Eoff
100
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 12A
T
C
= 25℃
T
C
= 125℃
30
1
10
100
200
Tf
Toff
100
Tf
50
1
10
100
200
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 23
Ω
T
C
= 25℃
T
C
= 125℃
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 23
Ω
T
C
= 25℃
T
C
= 125℃
100
Switching Time [ns]
Switching Time [ns]
Toff
Tf
Ton
Toff
100
Tr
10
4
8
12
16
20
24
50
Tf
4
8
12
16
20
24
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGP23N60UFD Rev. A1
SGP23N60UFD
1000
15
Common Emitter
R
L
= 25
Ω
T
C
= 25℃
Gate - Emitter Voltage, V
GE
[ V ]
12
Switching Loss [uJ]
9
300 V
6
V
CC
= 100 V
3
200 V
100
Eoff
Eon
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 23
Ω
T
C
= 25℃
T
C
= 125℃
4
8
12
16
20
24
10
0
0
10
20
30
40
50
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
300
100
I
C
MAX. (Pulsed)
200
100
Collector Current, I
C
[A]
I
C
MAX. (Continuous)
10
1㎳
100us
Collector Current, I
C
[A]
50us
10
DC Operation
1
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
100
1000
1
0.1
Safe Operating Area
V
GE
= 20V, T
C
= 100℃
0.1
1
10
100
1000
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
5
Thermal Response, Zthjc [
℃
/W]
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
0.01
0.005
10
-5
t1
t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
-4
10
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
