SUR180E
Switch-mode
Power Rectifiers
Ultrafast “E” Series with High Reverse
Energy Capability
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
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•
10 mjoules Avalanche Energy Guaranteed
•
Excellent Protection Against Voltage Transients in Switching
•
•
•
•
•
•
•
Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 800 V
These are Pb−Free Devices*
ULTRAFAST RECTIFIERS
1.0 AMPERES, 800 VOLTS
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 0.4 Gram (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in Plastic Bags; 1,000 per Bag
Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to
the Part Number
Polarity: Cathode Indicated by Polarity Band
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Note 1)
(Square Wave Mounting Method #3 Per Note 3)
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage
Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
Value
Unit
V
800
1.0 @
T
A
= 95°C
35
A
A
A
MUR180E
Y
WW
G
=
=
=
=
=
PLASTIC
AXIAL LEAD
CASE 59
MARKING DIAGRAM
A
MUR180E
YYWW
G
G
Assembly Location
Device Code
Year
Work Week
Pb−Free Package
MAXIMUM RATINGS
(Note: Microdot may be in either location)
T
J
, T
stg
−65 to
+175
°C
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2015
1
June, 2015 − Rev. 0
Publication Order Number:
SUR180E/D
SUR180E
THERMAL CHARACTERISTICS
Characteristics
Maximum Thermal Resistance, Junction−to−Ambient
Symbol
R
qJA
Value
See Note 3
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristics
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 A, T
J
= 150°C)
(i
F
= 1.0 A, T
J
= 25°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 100°C)
(Rated dc Voltage, T
J
= 25°C)
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 Amp/ms)
(I
F
= 0.5 A, i
R
= 1.0 Amp, I
REC
= 0.25 A)
Maximum Forward Recovery Time
(I
F
= 1.0 A, di/dt = 100 Amp/ms, Recovery to 1.0 V)
Controlled Avalanche Energy (See Test Circuit in Figure 6)
Typical Peak Reverse Recovery Current
(I
F
= 1.0 A, di/dt = 50 A/ms)
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
Symbol
v
F
1.50
1.75
i
R
600
10
t
rr
100
75
t
fr
W
AVAL
I
RM
75
10
1.7
ns
mJ
A
ns
mA
Value
Unit
V
ORDERING INFORMATION
Device
SUR180ERLG
Package
Axial Lead*
Shipping
†
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
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2
SUR180E
ELECTRICAL CHARACTERISTICS
20
IR, REVERSE CURRENT (
m
A)
1000
T
J
= 175°C
100
10
7.0
5.0
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
3.0
T
J
= 175°C
2.0
100°C
1.0
0.7
0.5
0.3
0.2
25°C
10
100°C
1.0
25°C
0.1
0.01
0
100
200
300
400
500
600
700
800
900 1000
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V
R
is sufficiently below rated V
R
.
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
5.0
0.1
0.07
0.05
0.03
0.02
4.0
RATED V
R
R
qJA
= 50°C/W
3.0
2.0
SQUARE WAVE
1.0
0
0
50
dc
0.01
0.3 0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
100
150
200
250
Figure 1. Typical Forward Voltage
T
A
, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating
(Mounting Method #3 Per Note 3)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
5.0
(CAPACITIVE LOAD)
PK
+
20
I
I
10
5.0
20
T
J
= 25°C
C, CAPACITANCE (pF)
2.5
10
7.0
5.0
4.0
AV
3.0
T
J
= 175°C
2.0
dc
SQUARE WAVE
1.0
0
0
0.5
1.0
1.5
2.0
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
3.0
2.0
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Power Dissipation
Figure 5. Typical Capacitance
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3
SUR180E
+V
DD
I
L
40 mH COIL
V
D
BV
DUT
MERCURY
SWITCH
I
D
I
D
V
DD
t
0
t
1
t
2
t
DUT
S
1
I
L
Figure 6. Test Circuit
Figure 7. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S
1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t
1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
DUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t
2
.
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
DD
power supply while the diode is in
breakdown (from t
1
to t
2
) minus any losses due to finite
EQUATION (1):
BV
2
DUT
W
[
1 LI LPK
AVAL
2
BV
–V
DUT DD
CH1
CH2
500V
50mV
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
DD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
1
was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
information obtained for the MUR8100E (similar die
construction as the MUR1100E Series) in this test circuit
conducting a peak current of one ampere at a breakdown
voltage of 1300 V, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
A
20ms
953 V
VERT
CHANNEL 2:
I
L
0.5 AMPS/DIV.
EQUATION (2):
2
W
[
1 LI LPK
AVAL
2
1
CH1
ACQUISITIONS
SAVEREF SOURCE
CH2
217:33 HRS
STACK
REF
REF
CHANNEL 1:
V
DUT
500 VOLTS/DIV.
TIME BASE:
20
ms/DIV.
Figure 8. Current−Voltage Waveforms
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4
SUR180E
NOTE 3 − AMBIENT MOUNTING DATA
Data shown for thermal resistance, junction−to−ambient
(R
qJA
) for the mountings shown is to be used as typical
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
TYPICAL VALUES FOR R
qJA
IN STILL AIR
Mounting
Method
1
2
R
qJA
3
Lead Length, L
1/8
1/4
1/2
52
65
72
67
80
87
50
Units
°C/W
°C/W
°C/W
MOUNTING METHOD 1
L
L
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 2
L
L
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉ
Vector Pin Mounting
MOUNTING METHOD 3
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
L = 3/8
″
Board Ground Plane
P.C. Board with
1−1/2
″
X 1−1/2
″
Copper Surface
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