PROFET® BTS 430 K2
Smart Highside Power Switch
•
Clamp of negative voltage at output
V
bb
-V
OUT
Avalanche
•
Short-circuit protection
V
bb (operation)
•
Current limitation
V
bb (reverse)
•
Thermal shutdown
R
ON
•
Diagnostic feedback
I
L(lim)
•
Open load detection in ON-state
I
L(ISO)
•
CMOS compatible input
•
Electrostatic Discharge
(ESD) protection
•
Loss of ground and loss of V
bb
protection
1)
•
Reverse battery protection
•
Undervoltage and overvoltage shutdown with auto-restart and hysteresis
Features
Product Summary
Clamp
50
4.5 ... 32
-32
38
36
11
V
V
V
mΩ
A
A
Application
• µC
compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays and discrete circuits
5
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic fault
feedback, integrated in Smart SIPMOS
®
chip on chip technology. Fully protected by embedded protection
functions.
R bb
+ V bb
3
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
V
Logic
Voltage
sensor
Charge pump
Level shifter
Rectifier
Open circuit
ESD
Logic
detection
Limit for
unclamped
ind. loads
OUT
2
IN
Temperature
sensor
5
Load
4
ST
Short circuit
detection
GND
®
PROFET
Load GND
1
Signal GND
1)
Additional external diode required for charged inductive loads
Semiconductor Group
1
04.96
BTS 430 K2
Pin
1
2
3
4
5
Symbol
GND
IN
Vbb
ST
OUT
(Load, L)
-
I
+
S
O
Function
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback, low on failure
Output to the load
Maximum Ratings
at T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation
Electrostatic discharge capability (ESD)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
Symbol
V
bb
Values
54
self-limited
-40 ...+150
-55 ...+150
125
1.7
2.0
-10 ... +16
±5.0
±5.0
≤
1
≤
75
Unit
V
A
°C
W
J
kV
V
mA
I
L
T
j
T
stg
P
tot
E
AS
V
ESD
V
IN
I
IN
I
ST
Thermal resistance
chip - case:
chip - ambient:
R
thJC
R
thJA
K/W
Semiconductor Group
2
BTS 430 K2
Electrical Characteristics
Parameter and Conditions
at T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
T
j
=25 °C:
R
ON
T
j
=150 °C:
I
L(ISO)
Nominal load current (pin 3 to 5)
ISO Proposal:
V
ON
= 0.5 V,
T
C
= 85 °C
Output current (pin
5
) while GND disconnected or
I
L(GNDhigh)
GND pulled up, see diagram page 7
Turn-on time
to 90%
V
OUT
:
t
on
Turn-off time
to 10%
V
OUT
:
t
off
R
L
= 12
Ω
Slew rate on
dV /dt
on
10 to 30%
V
OUT
,
R
L
= 12
Ω
Slew rate off
-dV/dt
off
70 to 40%
V
OUT
,
R
L
= 12
Ω
I
L
= 2 A
Operating Parameters
T
j
=-40...+150°C:
Operating voltage
T
j
=-40...+150°C:
Undervoltage shutdown
T
j
=-40...+150°C:
Undervoltage restart
Undervoltage restart of charge pump
see diagram page 12
Undervoltage hysteresis
∆
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
T
j
=-40...+150°C:
Overvoltage shutdown
T
j
=-40...+150°C:
Overvoltage restart
T
j
=-40...+150°C:
Overvoltage hysteresis
T
j
=-40...+150°C:
Overvoltage protection
2
)
I
bb
=4 mA
Standby current (pin 3)
T
j
=-40...+25°C
:
V
IN
=0
T
j
=150°C:
Operating current (Pin 1)
3)
,
V
IN
=5
--
9
--
50
10
0.4
1
30
55
11
--
160
--
--
--
38
70
--
1
260
60
2
4
mΩ
A
mA
µs
V/µs
V/µs
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
∆
V
bb(under)
4.5
2.4
--
--
--
32
32
--
50
--
--
--
6.5
0.2
--
--
0.2
57
32
4.5
4.5
7.5
--
46
--
--
--
V
V
V
V
V
V
V
V
V
µA
V
bb(over)
V
bb(o rst)
∆
V
bb(over)
V
bb(AZ)
I
bb(off)
I
GND
--
--
--
12
18
1.1
25
60
--
mA
2)
3
)
see also
V
ON(CL)
in table protection functions and circuit diagram page 7. Meassured without load
.
Add
I
ST
, if
I
ST
> 0
Semiconductor Group
3
BTS 430 K2
Parameter and Conditions
at T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
Overload current limit (pin 3 to 5)
T
j
=-40...+150°C
I
L(lim)
Short circuit shutdown delay after input pos. slope
V
ON
>
V
ON(SC)
,
T
j
=-40..+150°C:
t
d(SC)
min value valid only, if input "low" time exceeds 30
µs
19
80
36
--
57
400
A
µs
V
V
°C
K
J
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation
4)
,
T
j Start
= 150 °C
V
bb
= 12 V:
V
bb
= 24 V:
Reverse battery (pin 3 to 1)
5
)
Integrated resistor in V
bb
line
Diagnostic Characteristics
Open load detection current
(on-condition, )
V
ON(CL)
V
ON(SC)
T
jt
∆T
jt
E
AS
E
Load12
E
Load24
-V
bb
R
bb
--
50
8.3
--
10
--
--
--
--
--
1.7
1.3
1.0
32
--
--
150
--
--
--
--
--
120
V
Ω
Leakage output current
(off-condition)
T
j
=25..150°C:
I
L (OL)
T
j
=-40 °C
:
I
L(off)
10
10
--
--
--
6
500
600
--
mA
µA
4)
5
)
While demagnetizing load inductance, dissipated energy in PROFET is
E
AS
=
∫
V
ON(CL)
*
i
L
(t) dt, approx.
V
ON(CL)
2
), see diagramm page 8
E
AS
=
1
/
2
*
L
*
I
L
* (
V
ON(CL)
-
V
bb
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
GND
of
≈
0.3 A at V
bb
= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse I
GND
can be reduced by an additional
external GND-resistor (150
Ω).
Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
Semiconductor Group
4
BTS 430 K2
Parameter and Conditions
at T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Input and Status Feedback
6
)
Input resistance
see circuit page 6
Input turn-on threshold voltage
R
I
T
j
=-40..+150°C:
V
IN(T+)
V
IN(T-)
∆
V
IN(T)
I
IN(off)
I
IN(on)
t
d(ST SC)
--
1.5
1.0
--
1
10
80
350
10
--
--
0.5
--
25
200
--
--
2.4
--
--
30
50
400
1600
kΩ
V
V
V
µA
µs
µs
Input turn-off threshold voltage
T
j
=-40..+150°C:
Input threshold hysteresis
V
IN
= 0.4 V:
Off state input current (pin 2)
V
IN
= 3.5 V:
On state input current (pin 2)
Tj=-40
... +150°C:
Status valid after input slope
(short circuit)
Tj=-40
... +150°C:
Status valid after input slope
(open load)
Status output (open drain)
Zener limit voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
ST low voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
Status voltage while
V
bb
<2.4 V
Tj=25
... +150°C:
I
ST
= 500
µA
Tj=40°C:
t
d(ST)
V
ST(high)
V
ST(low)
V
ST
5.4
--
--
6.1
--
--
6.9
0.4
1.0
1.2
V
V
6)
If a ground resistor R
GND
is used, add the voltage drop across this resistor. Internal Z-diode typ. 6.1 V, see
maximum ratings page 2, circuit page 7
Semiconductor Group
5
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