PROFET® BTS 425 L1
Smart Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Reverse battery protection
1)
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of
V
bb
protection
•
Electrostatic discharge
(ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
V
bb(AZ)
V
bb(on)
R
ON
I
L(ISO)
I
L(SCr)
43
V
5.0 ... 24 V
60 mΩ
7.0
A
17
A
TO-220AB/5
5
1
Straight leads
5
5
1
Application
Standard
SMD
• µC
compatible power switch with diagnostic
feedback for 12 V DC grounded loads
•
Most suitable for resistive and lamp loads
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
®
technology. Fully protected by embedded protection
functions.
+ V bb
3
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
V
Logic
Voltage
sensor
Charge pump
Level shifter
Rectifier
ESD
Logic
Open load
Short to Vbb
detection
R
O
OUT
2
IN
Temperature
sensor
5
Load
4
ST
GND
®
PROFET
Load GND
GND
1
Signal GND
1
)
With external current limit (e.g. resistor R
GND
=150
Ω)
in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
02.97
BTS 425 L1
Pin
1
2
3
4
5
Symbol
GND
IN
Vbb
ST
OUT
(Load, L)
-
I
+
S
O
Function
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback, low on failure
Output to the load
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
Load dump protection
2
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3
)
= 2
Ω,
R
L
= 1.7
Ω,
t
d
= 200 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Symbol
V
bb
V
bb
Values
43
24
60
self-limited
-40 ...+150
-55 ...+150
75
1.0
2.0
-10 ... +16
±2.0
±5.0
Unit
V
V
V
A
°C
W
kV
V
mA
V
Load dump4
)
I
L
T
j
T
stg
P
tot
V
ESD
V
IN
I
IN
I
ST
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
min
--
--
--
chip - case:
R
thJC
junction - ambient (free air):
R
thJA
SMD version, device on PCB
5)
:
Values
typ
max
-- 1.67
--
75
34
--
Unit
K/W
2
)
3)
4)
5
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
Ω
resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group
2
BTS 425 L1
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
T
j
=25 °C:
T
j
=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V,
T
C
= 85 °C
Output current (pin
5
) while GND disconnected or
GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram
page 7
Turn-on time
IN
to 90%
V
OUT
:
to 10%
V
OUT
:
Turn-off time
IN
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
Ω
,
T
j
=-40...+150°C
Operating Parameters
T
j
=-40...+150°C:
Operating voltage
6
)
T
j
=-40...+150°C:
Undervoltage shutdown
T
j
=-40...+150°C:
Undervoltage restart
Undervoltage restart of charge pump
T
j
=-40...+150°C:
see diagram page 10
Undervoltage hysteresis
∆
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
T
j
=-40...+150°C:
Overvoltage shutdown
T
j
=-40...+150°C:
Overvoltage restart
T
j
=-40...+150°C:
Overvoltage hysteresis
T
j
=-40...+150°C:
Overvoltage protection
7
)
I
bb
=40 mA
T
j
=-40...+25°C
:
Standby current (pin 3)
V
IN
=0
T
j
= 150°C:
Leakage output current (included in
I
bb(off)
)
V
IN
=0
Operating current (Pin 1)
8)
,
V
IN
=5 V,
T
j
=-40...+150°C
6)
7)
8
)
On-state resistance (pin 3 to 5)
I
L
= 2 A
R
ON
--
5.8
50
100
7.0
--
60
120
--
10
mΩ
I
L(ISO)
I
L(GNDhigh)
--
A
mA
µs
t
on
t
off
dV /dt
on
-dV/dt
off
80
80
0.1
0.1
200
230
--
--
400
450
1
1
V/µs
V/µs
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
∆
V
bb(under)
5.0
3.5
--
--
--
24
23
--
42
--
--
--
--
--
--
--
5.6
0.2
--
--
0.5
47
10
12
--
1.8
24
5.0
5.0
7.0
--
34
--
--
--
25
28
12
3.5
V
V
V
V
V
V
V
V
V
µA
µA
mA
V
bb(over)
V
bb(o rst)
∆
V
bb(over)
V
bb(AZ)
I
bb(off)
I
L(off)
I
GND
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
≈
V
bb
- 2 V
See also
V
ON(CL)
in table of protection functions and circuit diagram page 7.
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Semiconductor Group
3
BTS 425 L1
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Repetitive short circuit shutdown current limit
T
j
=
T
jt
(see timing diagrams, page 9)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
9
)
Reverse battery voltage drop
(V
out
> V
bb
)
I
L
= -2 A
T
j
=150 °C:
Diagnostic Characteristics
Open load detection current
(on-condition, )
I
L(SCp)
27
20
12
37
30
18
17
--
10
--
610
47
40
25
--
--
--
32
--
A
I
L(SCr)
T
jt
∆T
jt
-V
bb
-V
ON(rev)
--
150
--
--
--
A
°C
K
V
mV
T
j
=-40 °C
:
I
L (OL)
T
j
=25..150°C:
150
150
2
600
450
3
950
750
4
mA
V
Open load detection voltage
10
) (off-condition)
V
OUT(OL)
T
j
=-40..150°C:
Internal output pull down
(pin 5 to 1),
V
OUT
=5 V,
T
j
=-40..150°C
R
O
4
10
30
kΩ
9
)
Requires 150
Ω
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
10)
External pull up resistor required for open load detection in off state.
Semiconductor Group
4
BTS 425 L1
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Input and Status Feedback
11
)
Input resistance
T
j
=-40..150°C, see circuit page 6
Input turn-on threshold voltage
T
j
=-40..+150°C:
T
j
=-40..+150°C:
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2),
V
IN
= 0.4 V,
T
j
=-40..+150°C
On state input current (pin 2),
V
IN
= 3.5 V,
T
j
=-40..+150°C
Delay time for status with open load after switch
off
(see timing diagrams, page 10
),
T
j
=-40..+150°C
Status invalid after positive input slope
Tj=-40
... +150°C:
(open load)
Status output (open drain)
Zener limit voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
T
j
=-40...+25°C,
I
ST
= +1.6 mA:
ST low voltage
T
j
= +150°C,
I
ST
= +1.6 mA:
R
I
V
IN(T+)
V
IN(T-)
∆
V
IN(T)
I
IN(off)
I
IN(on)
t
d(ST OL4)
t
d(ST)
2.5
1.7
1.5
--
1
20
100
--
3.5
--
--
0.5
--
50
520
250
6
3.5
--
--
50
90
1000
600
kΩ
V
V
V
µA
µA
µs
µs
V
ST(high)
V
ST(low)
5.4
--
--
6.1
--
--
--
0.4
0.6
V
11)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
Semiconductor Group
5
嵌入式系统
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