SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converters.
D
KMD6D0DN40Q
Dual N-Ch Trench MOSFET
H
T
P
G
L
FEATURES
・V
DSS
=40V, I
D
=6A.
・Drain-Source
ON Resistance.
R
DS(ON)
=38mΩ (Max.) @V
GS
=10V
R
DS(ON)
=50mΩ (Max.) @V
GS
=4.5V
・Super
High Dense Cell Design
・Very
fast switching
1
4
B1 B2
8
5
A
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
_
4.85
+
0.2
_
3.94
+
0.2
_
0.3
6.02
+
_
0.4
+
0.1
0.15+0.1/-0.05
_
1.63
+
0.2
_
0.65
+
0.2
1.27
0.20+0.1/-0.05
MAXIMUM RATING
(Ta=25℃ Unless otherwise noted)
CHARACTERISTIC
Drain Source Voltage
Gate Source Voltage
T
a
=25℃
Drain Current
Pulsed(Note1)
SYMBOL
V
DSS
V
GSS
I
D
*
I
DP
dv/dt
di/dt
E
AS
E
AR
T
j
T
stg
R
thJA
*
RATING
40
±12
6
24
4.5
200
66
2.7
-50~150
-50~150
62.5
UNIT
V
V
A
A
V/ns
A/us
mJ
mJ
℃
℃
101
FLP-8
Peak Diode Recovery dv/dt (Note 2)
Peak Diode Recovery di/dt
Single pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 1)
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Marking
Type Name
KMD6D0DN
40Q
Lot No.
℃/W
* : Surface Mounted on FR4 Board (25mm×25mm, 1.5t, t≤10sec)
PIN CONNECTION (TOP VIEW)
S1
G1
S2
G2
1
8
D1
D1
D2
D2
1
8
7
6
5
2
7
2
3
3
6
4
5
4
2012. 7. 26
Revision No : 0
1/5
KMD6D0DN40Q
ELECTRICAL CHARACTERISTICS
(Tj=25℃)
UNLESS OTHERWISE NOTED
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
Forward Transconductance
Dynamic
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
I
DR
=6A, V
GS
=0V
-
0.87
1.2
V
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20V, V
GS
=10V
I
D
=6A, R
G
=6Ω (Note4, 5)
V
DS
=20V, V
GS
=5V, I
D
=6A (Note4, 5)
V
DS
=20V, V
GS
=10V, I
D
=6A (Note4, 5)
V
DS
=15V, f=1MHz, V
GS
=0V
-
-
-
-
-
-
-
-
-
-
-
460
80
50
8.0
1.5
2.0
4.1
12
8
35
6
-
-
-
-
-
-
-
-
-
ns
-
-
nC
nC
pF
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
V
GS
=4.5V, I
D
=5A
g
fs
V
DS
=10V, I
D
=6A(Note4, 5)
-
-
35
10
50
-
S
I
D
=250μ V
GS
=0V
A,
V
DS
=40V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
V
DS
=V
GS,
I
D
=250μ
A
V
GS
=10.0V, I
D
=6A
40
-
-
1.0
-
-
-
-
2.0
27
-
1
±10
2.5
38
mΩ
V
μ
A
μ
A
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Note1) Repetivity rating : Pulse width Limited by juntion temperature.
Note2) I
S
≤6A,
dI/dt≤100A/㎲, V
DD
≤BV
DSS
, Starting Tj = 25℃.
Note3) L = 1mH, I
AS
= 6A, V
DD
= 32V, Rg = 25Ω, Starting Tj = 25℃.
Note4) Pulse test : Pulse width
≤
300㎲ , Duty cycle
≤
2%
Note5) Essentially independenl of operating temperature.
2012. 7. 26
Revision No : 0
2/5
KMD6D0DN40Q
Fig1. I
D
- V
DS
20
V
GS
=10
Fig2. R
DS(on)
- I
D
Drain Source On Resistance R
DS(ON)
(Ω)
0.16
Common Source
0.14
Tc= 25 C
Pulse Test
V
GS
=4.5
Common Source
Tc= 25 C
Pulse Test
Drain Current I
D
(A)
16
V
GS
=5
0.12
0.1
0.08
0.06
0.04
0.02
0
0
5
10
15
20
V
GS
=4.5
12
V
GS
=4.0
8
4
0
0
2
4
6
8
10
V
GS
=3.5
V
GS
=3.0
V
GS
=10V
Drain - Source Voltage V
DS
(V)
Drain Current I
D
(A)
Fig3. I
D
- V
GS
10
2
Common Source
100
Fig4. R
DS(on)
- T
j
Common Source
V
DS
=10V
Pulse Test
Drain Source On Resistance
R
DS(ON)
(mΩ)
6
7
8
9
10
Drain Current I
D
(A)
V
DS
=10V
Pulse Test
80
60
40
20
0
10
1
100 C
25 C
10
0
2
3
4
5
-80
-40
0
40
80
120
160
Gate - Source Voltage V
GS
(V)
Junction Temperature Tj ( C )
Fig5. V
th
- T
j
Gate Threshold Voltage V
th
(V)
Reverse Drain Current I
DR
(A)
5
Common Source
V
GS
=V
DS
I
D
=250µA
4
Pulse Test
Fig6. I
DR
- V
SDF
10
2
Common Drain
V
GS
=0V
Pulse Test
3
2
1
0
-80
10
1
25 C
100 C
10
-40
0
40
80
120
160
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Junction Temperature Tj ( C)
Source - Drain Forward Voltage V
SDF
(V)
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Revision No : 0
3/5
KMD6D0DN40Q
Fig7. Qg - V
GS
12
Fig8. Safe Operation Area
10
2
Operation in this
area is limited by R
DS(ON)
Gate-Source Voltage V
GS
(V)
I
D
=6A
10
Drain Current I
D
(A)
10
1
10µs
100µs
8
6
4
2
0
0
2
4
6
8
10
12
14
16
V
DS
=20V
10
0
1ms
10ms
10
-1
Tc= 25 C
Tj = 150 C
2
Single pulse
100ms
10
10
-1
DC
10
0
10
1
10
2
Gate - Charge Q
g
(nC)
Drain - Source Voltage V
DS
(V)
Fig9. Transient Thermal Response Curve
W)
Transient Thermal Resistance (
10
2
Single Pluse
10
1
0.01
0.02
0.05
0.1
0.2
0.5
P
DM
t
1
t
2
Duty Cycle D = t
1
/t
2
10
0
10
-1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
TIME (sec)
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Revision No : 0
4/5
KMD6D0DN40Q
Fig. 10 Gate Charge
VGS
10 V
Schottky
Diode
ID
0.8
VDSS
ID
1.0 mA
V
DS
VGS
Q
Qgs
Qgd
Qg
Fig. 11 Resistive Load Switching
RL
VDS
90%
0.5 VDSS
6Ω
VDS
10 V
VGS
10%
t
d(on)
t
d(off)
VGS
tr
t
on
t
f
t
off
2012. 7. 26
Revision No : 0
5/5
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