74HC259; 74HCT259
8-bit addressable latch
Rev. 5 — 7 August 2012
Product data sheet
1. General description
The 74HC259; 74HCT259 are high-speed Si-gate CMOS devices and are pin compatible
with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC
standard No. 7-A.
The 74HC259; 74HCT259 are high-speed 8-bit addressable latches designed for
general-purpose storage applications in digital systems. They are multifunctional devices
capable of storing single-line data in eight addressable latches. They provide a 3-to-8
decoder and multiplexer function with active HIGH outputs (Q0 to Q7). They also
incorporate an active LOW common reset (MR) for resetting all latches as well as an
active LOW enable input (LE).
The 74HC259; 74HCT259 has four modes of operation:
•
Addressable latch mode, in this mode data on the data line (D) is written into the
addressed latch. The addressed latch follows the data input with all non-addressed
latches remaining in their previous states.
•
Memory mode, in this mode all latches remain in their previous states and are
unaffected by the data or address inputs.
•
Demultiplexing mode (or 3-to-8 decoding), in this mode the addressed output follows
the state of the data input (D) with all other outputs in the LOW state.
•
Reset mode, in this mode all outputs are LOW and unaffected by the address inputs
(A0 to A2) and data input (D).
When operating the 74HC259; 74HCT259 as an address latch, changing more than one
address bit could impose a transient wrong address. Therefore, this should only be done
while in the Memory mode.
2. Features and benefits
Combined demultiplexer and 8-bit latch
Serial-to-parallel capability
Output from each storage bit available
Random (addressable) data entry
Easily expandable
Common reset input
Useful as a 3-to-8 active HIGH decoder
Input levels:
For 74HC259: CMOS level
For 74HCT259: TTL level
NXP Semiconductors
74HC259; 74HCT259
8-bit addressable latch
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22E exceeds 1000 V
Multiple package options
Specified from
40 C
to +85
C
and from
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74HC259N
74HCT259N
74HC259D
74HCT259D
74HC259DB
74HCT259DB
74HC259PW
74HCT259PW
74HC259BQ
74HCT259BQ
40 C
to +125
C
DHVQFN16
40 C
to +125
C
TSSOP16
40 C
to +125
C
SSOP16
40 C
to +125
C
SO16
plastic small outline package; 16 leads;
body width 3.9 mm
plastic shrink small outline package; 16 leads; body
width 5.3 mm
plastic thin shrink small outline package; 16 leads;
body width 4.4 mm
SOT109-1
SOT338-1
SOT403-1
40 C
to +125
C
DIP16
Description
plastic dual in-line package; 16 leads (300 mil)
Version
SOT38-4
Type number
plastic dual in-line compatible thermal enhanced very SOT763-1
thin quad flat package; no leads; 16 terminals;
body 2.5
3.5
0.85 mm
4. Functional diagram
13
15
14
Z9
G8
G10
9,10D
0
1
C10
8R
DX
14
LE
Q0
13
D
Q1
Q2
Q3
1
2
3
A0
A1
A2
MR
15
mna573
4
1
4
5
6
7
9
10
11
12
2
3
0
G
2
0
7
1
5
6
2
7
3
9
4
10
5
11
6
12
7
mna572
Q4
Q5
Q6
Q7
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
74HC_HCT259
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 7 August 2012
2 of 22
NXP Semiconductors
74HC259; 74HCT259
8-bit addressable latch
Q0
1
2
3
A0
A1
A2
1-of-8
DECODER
8 LATCHES
14
15
13
LE
MR
D
Q1
Q2
Q3
Q4
4
5
6
7
9
Q5 10
Q6 11
Q7 12
mna571
Fig 3.
Functional diagram
5. Pinning information
5.1 Pinning
74HC259
74HCT259
terminal 1
index area
A1
16 V
CC
15 MR
14 LE
13 D
12 Q7
11 Q6
10 Q5
9
001aaj444
74HC259
74HCT259
A0
A1
A2
Q0
Q1
Q2
Q3
GND
1
2
3
4
5
6
7
8
2
3
4
5
6
7
8
GND
Q4
9
GND
(1)
16 V
CC
15 MR
14 LE
13 D
12 Q7
11 Q6
10 Q5
A2
Q0
Q1
Q2
Q3
1
A0
Q4
001aaj445
Transparent top view
(1) The die substrate is attached to this pad using
conductive die attach material. It cannot be used as
supply pin or input.
Fig 4.
Pin configuration (DIP16, SO16, SSOP16 and
TSSOP16)
Fig 5.
Pin configuration (DHVQFN16)
74HC_HCT259
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 7 August 2012
3 of 22
NXP Semiconductors
74HC259; 74HCT259
8-bit addressable latch
5.2 Pin description
Table 2.
Symbol
A0, A1, A2
Q0, Q1, Q2, Q3, Q4, Q5, Q6, Q7
GND
D
LE
MR
V
CC
Pin description
Pin
1, 2, 3
8
13
14
15
16
Description
address input
ground (0 V)
data input
latch enable input (active LOW)
conditional reset input (active LOW)
supply voltage
4, 5, 6, 7, 9, 10, 11, 12 latch output
6. Functional description
Table 3.
Function table
[1]
Input
MR
Reset (clear)
L
Demultiplexer
L
(active HIGH 8-channel) L
decoder (when D = H)
L
L
L
L
L
L
Memory (no action)
Addressable latch
H
H
H
H
H
H
H
H
H
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
d = HIGH or LOW data one set-up time prior to the LOW-to-HIGH LE transition;
q = lower case letter indicates the state of the referenced input one set-up time prior to the LOW-to-HIGH transition.
Operating mode
Output
LE
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
D
X
d
d
d
d
d
d
d
d
X
d
d
d
d
d
d
d
d
A0
X
L
H
L
H
L
H
L
H
X
L
H
L
H
L
H
L
H
A1
X
L
L
H
H
L
L
H
H
X
L
L
H
H
L
L
H
H
A2
X
L
L
L
L
H
H
H
H
X
L
L
L
L
H
H
H
H
Q0
L
L
L
L
L
L
L
L
q
0
q
0
q
0
q
0
q
0
q
0
q
0
q
0
Q1
L
Q2
L
L
Q3
L
L
L
Q4
L
L
L
L
Q5
L
L
L
L
L
Q6
L
L
L
L
L
L
Q7
L
L
L
L
L
L
L
Q=d
q
7
q
7
q
7
q
7
q
7
q
7
q
7
Q=d
Q=d L
L
L
L
L
L
L
q
1
Q=d L
L
L
L
L
L
q
2
q
2
Q=d L
L
L
L
L
q
3
q
3
q
3
Q=d L
L
L
L
q
4
q
4
q
4
q
4
Q=d L
L
L
q
5
q
5
q
5
q
5
q
5
Q=d L
L
q
6
q
6
q
6
q
6
q
6
q
6
Q=d L
Q = d q
1
q
1
q
1
q
1
q
1
q
1
q
1
Q = d q
2
q
2
q
2
q
2
q
2
q
2
Q = d q
3
q
3
q
3
q
3
q
3
Q = d q
4
q
4
q
4
q
4
Q = d q
5
q
5
q
5
Q = d q
6
q
6
Q = d q
7
74HC_HCT259
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 7 August 2012
4 of 22
NXP Semiconductors
74HC259; 74HCT259
8-bit addressable latch
Table 4.
LE
L
H
L
H
[1]
Operating mode select table
[1]
MR
H
H
L
L
Mode
Addressable latch mode
Memory mode
Demultiplexer mode
Reset mode
H = HIGH voltage level; L = LOW voltage level.
7. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
T
amb
=
40 C
to +125
C
DIP16 package
SO16 package
(T)SSOP16 package
DHVQFN16 package
[1]
[2]
[3]
[4]
[5]
[2]
[3]
[4]
[5]
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
0.5
V to V
CC
+ 0.5 V
[1]
[1]
Min
0.5
-
-
-
-
70
65
-
-
-
-
Max
+7.0
20
20
25
+70
-
+150
750
500
500
500
Unit
V
mA
mA
mA
mA
mA
C
mW
mW
mW
mW
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
P
tot
derates linearly with 12 mW/K above 70
C.
P
tot
derates linearly with 8 mW/K above 70
C.
P
tot
derates linearly with 5.5 mW/K above 60
C.
P
tot
derates linearly with 4.5 mW/K above 60
C.
74HC_HCT259
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 7 August 2012
5 of 22