e. Maximum under steady state conditions is 110 °C/W.
f. Maximum under steady state conditions is 115 °C/W.
Symbol
R
thJA
R
thJF
R
thJA
R
thJF
Typical
60
35
63
39
Maximum
71.5
45
78
47
°C/W
Unit
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 2.6 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 2.6 A, V
GS
= 0 V
- 0.8
23
14
11
12
T
C
= 25 °C
- 6.2
- 15
- 1.2
35
21
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 3.8
Ω
I
D
≅
- 2.6 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
V
DD
= - 10 V, R
L
= 3.8
Ω
I
D
≅
- 2.6 A, V
GEN
= - 10 V, R
g
= 1
Ω
f = 1 MHz
1.2
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 3.3 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 3.3 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
330
80
57
8
4
0.8
1.4
6
3
10
16
8
18
40
18
10
12
6
20
24
15
27
60
27
15
ns
Ω
660
160
114
12
6
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 3.3 A
V
GS
= - 2.5 V, I
D
= - 2.6 A
V
DS
= - 10 V, I
D
= - 3.3 A
- 15
0.090
0.140
6
0.108
0.175
- 0.6
- 20
- 20
3
- 1.5
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 64715
S10-1051-Rev. C, 03-May-10
Si4823DY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 1 A
I
F
= 1 A, T
J
= 125 °C
V
R
= 30 V
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
V
R
= 30 V, T
J
= 85 °C
V
R
= 30 V, T
J
= 125 °C
V
R
= 15 V
Min.
Typ.
0.46
0.41
0.025
0.6
5
35
Max.
0.50
0.50
0.1
6
25
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
15
V
GS
= 10
V
thru 4
V
2.0
12
I
D
- Drain Current (A)
1.6
I
D
- Drain Current (A)
T
C
= - 55 °C
1.2
9
V
GS
= 3
V
6
0.8
T
C
= 25 °C
0.4
T
C
= 125 °C
3
V
GS
= 2
V
0
0
1
2
3
4
5
0.0
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.20
V
GS
= 2.5
V
500
R
DS(on)
- On-Resistance (Ω)
0.16
C - Capacitance (pF)
Transfer Characteristics
600
C
iss
400
0.12
V
GS
= 4.5
V
300
200
C
oss
C
rss
0.08
100
0.04
0
3
6
9
12
15
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Document Number: 64715
S10-1051-Rev. C, 03-May-10
www.vishay.com
3
Si4823DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
10
I
D
= 3.3 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 10
V
6
V
DS
= 16
V
4
1.3
1.5
V
GS
= 10
V,
I
D
= 3.3 A
1.1
V
GS
= 4.5
V,
I
D
= 2.6 A
0.9
2
0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
10
0.20
On-Resistance vs. Junction Temperature
I
D
= 3.3 A
0.16
T
J
= 150 °C
T
J
= 25 °C
1
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.12
T
J
= 125 °C
0.08
T
J
= 25 °C
0.04
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
3
6
9
12
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.3
50
On-Resistance vs. Gate-to-Source Voltage
40
1.1
Power (W)
30
V
GS(th)
(V)
I
D
= 250
µA
0.9
20
0.7
10
0.5
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
Document Number: 64715
S10-1051-Rev. C, 03-May-10
Si4823DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
1s
10 s
DC
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
5
3.5
3.0
4
I
D
- Drain Current (A)
2.5
Power (W)
0
25
50
75
100
125
150
3
2.0
1.5
1.0
1
0.5
0
0.0
0
25
50
75
100
125
150
2
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
1.25
Power Derating, Junction-to-Case
1.00
Power (W)
0.75
0.50
0.25
0.00
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
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