polyfet rf devices
SA741
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"
TM
process features
low feedback and output capacitances,
resulting in high F
t
transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
35.0 Watts Single Ended
Package Style AA
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
60 Watts
Junction to
Case Thermal
Resistance
o
2.80 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
125 V
Drain to
Source
Voltage
125 V
Gate to
Source
Voltage
20 V
2.5 A
RF CHARACTERISTICS (
SYMBOL
Gps
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
16
55
TYP
35.0 WATTS OUTPUT )
MAX
UNITS
dB
%
5:1
Relative
TEST CONDITIONS
Idq = 0.20 A, Vds =
50.0
V, F =
Idq = 0.20 A, Vds =
50.0
V, F =
175
MHz
175
MHz
η
VSWR
Idq = 0.20 A, Vds =
50.0
V, F =
175
MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
1
0.8
2.50
3.50
48.0
0.2
17.0
MIN
125
1.0
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids = 10.00 mA, Vgs = 0V
Vds = 50.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.05 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 1.00 A
Vgs = 20V, Vds = 10V
Vds = 50.0 Vgs = 0V, F = 1 MHz
Vds = 50.0 Vgs = 0V, F = 1 MHz
Vds = 50.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 07/17/2003
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
SA741
POUT VS PIN GRAPH
S A 741 Pin vs Pout F req=175MH z , V D S =50V , Idq=.2A
48
44
40
36
32
28
24
20
16
12
8
4
0
0
0.5
1
1.5
P IN IN W A T T S
CAPACITANCE VS VOLTAGE
S1E 1 DIE CAPACITANCE
20.00
19.00
18.00
100
Ciss
Pout
17.00
16.00
15.00
10
Coss
Gain
Efficiency = 55%
14.00
13.00
12.00
11.00
1
Crss
0.1
0
5
10
15
20
25
30
35
40
45
50
2
2.5
3
VDS IN VOLTS
IV CURVE
S1E 1 DIE IV
4
3.5
3
ID IN AMPS
2.5
2
ID & GM VS VGS
10.00
S1E 1 DIE ID & GM Vs VG
Id
Id in amps; Gm in mhos
1.00
gM
1.5
1
0.5
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
VDS
Vg=6v
INVOLTS
vg=8v
14
0
16
18
vg=12v
20
0.10
0.01
0
2
4
6
8
10
Vgs in Volts
12
14
16
18
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 07/17/2003
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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